Transistors

Rectifiers (Diodes)

GaN on Silicon Power Devices feature JEDEC qualification.

Based on EZ-GaN™ technology, 600 V Total GaN™ TPH3006PS HEMT comes in TO-220 package with low on-state resistance of 150 mΩ and low reverse-recovery charge of 54 nC. Also available in industry-standard TO-220 packages, TPS3410PK and TPS3411PK GaN diodes offer 6 A and 4 A operating currents, respectively, with forward voltage of 1.3 V. Applications include power supplies and adapters, PV...

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Rectifiers (Diodes)

Non-Punch Through IGBTs serve high-performance applications.

With 25, 50, and 70 A current ratings, 1,200 V non-punch through (NPT) IGBTs are based on Power MOS 8™ technology and can be packaged with Microsemi FREDs or silicon carbide Schottky diodes. Gate charge promotes accelerated switching, while hard switching operation greater than 80 kHz lends to power conversion efficiency. SMT backside solderable D(3) package option is available for these Short...

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Power Innovation from STMicroelectronics Could Save Greenhouse Gas Generation Equal to Emissions of Thousands of Cars
Electrical Boxes

Power Innovation from STMicroelectronics Could Save Greenhouse Gas Generation Equal to Emissions of Thousands of Cars

New superjunction MOSFETs featuring reduced gate charge increase energy efficiency in LCD TV power supplies and other electronics applications Geneva – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, has announced special fast-acting variants of its advanced superjunction power MOSFETs used in energy-efficient...

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Cree Announces Volume Production of Second Generation SiC MOSFET Bringing Significant Cost Savings to Power Conversion Systems New Devices Deliver Twice the Amps-Per-Dollar
Transistors

Cree Announces Volume Production of Second Generation SiC MOSFET Bringing Significant Cost Savings to Power Conversion Systems New Devices Deliver Twice the Amps-Per-Dollar

DURHAM, N.C., — Cree, Inc. (Nasdaq: CREE) announces the release of its second generation SiC MOSFET enabling systems to have higher efficiency and smaller size at cost parity with silicon-based solutions. These new 1200V MOSFETs deliver industry-leading power density and switching efficiency at half the cost per amp of Cree’s previous generation MOSFETs. At this price-performance point, they...

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Power MOSFET suits space constrained applications.
Transistors

Power MOSFET suits space constrained applications.

Devices combine fast switching, low gate charge San Jose, CA…Advanced Power Electronics Corp. (USA), a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, today launched a new series of power MOSFETs in the popular TO-92 through-hole package which is widely used in commercial and industrial applications where PCB space is at a premium. Ideally...

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Switches

Mont-Saint-Guibert, Belgium – CISSOID, the leader in high-temperature semiconductor solutions, introduces CHT-NEPTUNE, a high-voltage power switch in TO-257 package, suitable for power converters and motor drives guaranteed for reliable operation up to +225°C. CHT-NEPTUNE is a high-temperature, high-voltage, Silicon Carbide MOSFET specifically built for power converter applications in...

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Power Supplies

Transphorm Enables the World's First GaN-Based High Power Converter

600V Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and modules employ patented EZ-GaN™ technology; achieve vital milestone in broad adoption of GaN-based power conversion WASHINGTON - Transphorm Inc. today announced at the 2013 ARPA-E Energy Innovation Summit that its novel 600V Gallium Nitride (GaN) module has enabled the world's first GaN-based high power converter....

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Resistors

Vishay Intertechnology to Showcase Leading Optoelectronics and Vishay Electro-Films Submounts, RF Capacitors, and Wire-Bondable Products at 2013 SPIE Photonics West Exhibition

MALVERN, Pa.- Vishay Intertechnology, Inc. (NYSE: VSH) today announced that it will be showcasing its latest industry-leading optoelectronics and Vishay Electro-Films (EFI) solutions at the 2013 SPIE Photonics West Exhibition, taking place from Feb. 2-7 at the Moscone Center in San Francisco. In booth 5535, products on display will include a wide range of infrared components, in addition to...

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Power MOSFETs offer on-resistance down to 20 mOhm at 4.5 V.
Transistors

Power MOSFETs offer on-resistance down to 20 mOhm at 4.5 V.

Housed in 1.6 x 1.6 x 0.6 mm CSP MICRO FOOT-® package, 8 V n-channel Si8424CDB and -20 V p-channel Si8425DB offer maximum on-resistance of 20 mΩ and 23 mΩ, respectively, at 4.5 V gate drive. Smaller 8 V n-channel Si8466EDB, measuring 1 x 1 x 0.55 mm, features max on-resistance of 43 mΩ at 4.5 V and provides 3,000 V typical ESD protection. RoHS-compliant and halogen-free, TrenchFET®...

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Transistors

Mont-Saint-Guibert, Belgium – CISSOID, the leader in high-member of its EARTH family of general purpose transistors. The CHT-NMOS8001 is an N-channel MOSFET guaranteed for operation from -55°C up to +225°C. It is available in a tiny thin dual flat pack (TDFP) hermetically-sealed Ceramic SMD package, as small as 5x5.5mm (PCB footprint). This transistor is capable of switching a current up to...

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