Transistors

Transistors

Cree Ships over Two Million GaN HEMT Devices for Telecom Infrastructure

DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE) reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth. As mobile devices such as smartphones are becoming...

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Power Transistor leverages gallium nitride (GaN) technology.
Transistors

Power Transistor leverages gallium nitride (GaN) technology.

Nitronex updates design process to create industry’s toughest transistor... DURHAM, NC - Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC-2.5GHz, 50W power...

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Transistors

Power Transistors scale to peak pulse power level of 100 W.

90W, 50W and 15W Transistor Series Equips Radar and Communications System Designers to Achieve Breakthrough Power Density While Reducing System Size and Weight LOWELL, Mass.--M/A-COM Technology Solutions Inc. (MACOM), a leading supplier of high performance analog semiconductor solutions, introduced today its series of GaN in Plastic packaged power transistors for high-performance civilian and...

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Insulated Gate Bipolar Transistors offer high-speed switching.
Transistors

Insulated Gate Bipolar Transistors offer high-speed switching.

New IGBT devices expand current ratings and deliver efficient, high-speed switching capabilities for power applications such as UPS, hot pots, rice cookers and microwave appliances Power Conversion Intelligent Motion (PCIM), NUREMBERG, Germany – ON Semiconductor (Nasdaq: ONNN), driving innovation in energy efficiency, continues to expand its portfolio of high performance IGBTs targeted at high...

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Power Transistor targets L-Band pulsed radar applications.
Transistors

Power Transistor targets L-Band pulsed radar applications.

Consisting of gold-metalized pre-matched GaN on Silicon Carbide transistor, MAGX-001214-500L00 provides 500 W of output power with 19 dB of gain, 55% efficiency, and 300 -µs pulse. High breakdown voltages allow for operation at 50 V under extreme load mismatch conditions. Operating in frequency range of 1,200–1,400 MHz, HEMT transistor is available in both flanged and flangeless packages.

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Vishay Intertechnology to Showcase Latest Power MOSFETs, Passive Components, and Diodes at PCIM Europe 2013
Rectifiers (Diodes)

Vishay Intertechnology to Showcase Latest Power MOSFETs, Passive Components, and Diodes at PCIM Europe 2013

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology line-up for PCIM (Power Conversion Intelligent Motion) Europe 2013, taking place May 14-16 in Nuremberg, Germany. In Hall 9, Booth 9-212 at the Exhibition Centre Nuremberg, the Company will be highlighting its industry-leading power MOSFET, passive component, and diode technologies for a wide range of...

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Rectifiers (Diodes)

Vishay Intertechnology Wins Three EFY Readers' Choice Awards

Company Honored in Capacitors, Diodes and Transistors, and Resistors Categories MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the company has been honored with three Electronics For You (EFY) 2012 Readers' Choice Awards in the categories of Capacitors, Diodes and Transistors, and Resistors. Presented at a ceremony in Bengaluru, India, the EFY Readers' Choice...

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Monolithic Dual N-Ch JFET supports low noise applications.
Transistors

Monolithic Dual N-Ch JFET supports low noise applications.

Available in surface mount SOIC-8, through-hole TO-71, and- smaller SOT23-6 packages as well as ROHS compliant versions, Model LSK489 features ultra low noise of 1.5 nV at 1 KHz and gate-to-drain capacitance of 4 pF. Design consists of interleaving both JFETs on same piece of silicon to provide optimal matching and thermal tracking, with nearly zero popcorn noise. Applications include microphone...

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Vishay Intertechnology Power MOSFET and Polypropylene Film Capacitor Honored with China Electronic Market Editors' Choice Awards
Capacitors

Vishay Intertechnology Power MOSFET and Polypropylene Film Capacitor Honored with China Electronic Market Editors' Choice Awards

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the company's Si7655DN - 20 V p-channel power MOSFET and MKP1848S high-performance metallized DC polypropylene film capacitor have received China Electronic Market (CEM) magazine 2012 Editors' Choice Awards in the categories of The Most Competitive Power Devices Product in China" and "The Most Competitive Capacitor...

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Delivery Equipment That Really Delivers
Sponsored

Delivery Equipment That Really Delivers

Are you in need of safer, more efficient transportation equipment? Do you feel like your delivery equipment could really use an upgrade? Check out this video, and learn about Halo Ramp Company's patented safety platforms, and how they help you bypass your trickiest delivery challenges.

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