New Transistors Products

N-ch MOSFET targets lithium-ion battery protection circuits.

Housed in SOT-23F package measuring 2.9 x 2.4 mm, Model SSM3K324R utilizes UMOSVII-H process to minimize gate switch charge and on-state resistance, resulting in optimized power efficiency. Surface mount device features- input capacitance of 200 pF with max RDS(on) of 109 mΩ at VGS=1.8 V and 56 mΩ at VGS = 4.5 V. MOSFET is- designed for use in- lithium-ion battery protection circuits found...

Cree SiC MOSFETs Enable New Generation of High Efficiency and High Reliability Power Supplies from Delta Elektronika BV

Expanded Portfolio of Cree-® MOSFETs enables 21 Percent Reduction in Power Losses and Provides a Simpler Architecture with Half the Number of Components DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE) announces that its newly expanded portfolio of 1200 V SiC MOSFETs are being incorporated into the latest advanced power supplies from Delta Elektronika BV. Delta Elektronika demonstrated a 21 percent...

High and Low Side Gate Driver IC has 700 V absolute max rating.

Both high side and low side outputs of- IX2113 feature integrated power DMOS transistors, each capable of sourcing and sinking over 2 A of gate drive current. High-voltage level shift circuitry allows low-voltage logic signals to drive N-channel power MOSFETs and IGBTs in- high side configuration operating up to 600 V. Manufactured on HVIC Silicon on Insulator (SOI)- process, IC- can drive...

GaN Power Device features 150 V breakdown voltage.

Enabling normally off operations, Model MB51T008A features on-state resistance of 13 mΩ and total gate charge of 16 nC, achieving half FOM of silicon-based power devices with equivalent breakdown voltage. Use of WLCSP packaging enables minimal parasitic inductance and high-frequency operations. IC is suited for high- and low-side- switches in DC-DC converters employed in power supplies for data...

The ROI of a Full Service Manufacturer

Full service manufacturers incorporate a complete line of production capabilities to facilitate fast, cost-efficient manufacturing of complex products without the need for multiple contractors.

Fast Switching NPT IGBTs operate in harsh environments.

Offered in 45, 70, and 95 A current ratings, 650 V non-punch through (NPT) insulated bipolar gate transistors (IGBTs) enable switching speeds up to 150 kHz –- further improved when transistors are paired with SiC free-wheeling diodes. Products are based on advanced Power MOS 8™ technology and leverage wafer thinning process, reducing total switching losses, and may be paralleled (positive...

Power MOSFETS and ICs from Advanced Power Electronics Corp. Now to Be Available through Premier Farnell

Competitive pricing; excellent performance San Jose, CA – Advanced Power Electronics Corp. (USA), a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, today announced that it has signed a franchise deal with Premier Farnell plc (LSE:pfl), a leading high service distributor of electronic components and host of the industry-leading element14...

Power MOSFETs feature low on-resistance.

Halogen-free and RoHS-compliant, TrenchFET-® Gen III P-channel MOSFETs include -40 V SiS443DN in PowerPAK 1212-8 package and -30 V SiSS27DN in PowerPAK 1212-8S package. Units are optimized for 24, 19, and 12 V load switches as well as adapter and battery switches in wide range of applications including power management in mobile computing, smartphones, and tablets. Max on-resistance is 11.7 mΩ...

Open Pin Field Arrays deliver high-speed performance.

High-density LP Array™ (LPAM and LPAF Series) supports high-speed applications that require reliable, high-pin count solutions in- low-profile design. Available in 4, 4.5, and 5 mm mated heights with up to 180 total pins in- 4 or- 6 row configurations, arrays feature- dual wipe contact system on 1.27- x- 1.27 mm pitch grid for maximum grounding and routing flexibility. Lead-free solder...

SMD Transmissive Optical Sensors operate from -40 to +125

Measuring 5.5 x 4 x 4 mm, single-channel TCPT1350X01 includes infrared emitter and phototransistor detector located face-to-face in surface-mount package while dual-channel TCUT1350X01 includes infrared emitter and 2 phototransistor detectors. Both AEC-Q101-qualified devices have phototransistor output and- 0.3 mm aperture. Offering typical output current of 1.6 mA, sensors operate at wavelength...

Texas Instruments Builds Upon Leadership in Millimeter Wave Circuits for Short-Range Sensors

DALLAS- – This week at the 2013 VLSI Symposium in Kyoto, Japan, Texas Instruments Incorporated (TI) (NASDAQ: TXN) will demonstrate an industry first in millimeter wave circuits with a paper on a 160GHz center-frequency-pulsed transmitter for short-range sensor applications.- The transmitter features a higher effective isotropic radiated power (EIRP) at sub-THz frequencies than previous...

Sentry Equipment Introduces New Compact Hygienic Automatic Sampler

As a leader in industrial sampling equipment at Sentry Equipment, our success is built on a history of innovation and designs that epitomize value and efficiency. The new Hygienic Automatic Sampler is another example of our dedication to developing quality engineered products. To learn how this product can streamline the sampling process for dry, free-flowing materials, see our new video.