Transistors

Transistors

Fast Switching NPT IGBTs operate in harsh environments.

Offered in 45, 70, and 95 A current ratings, 650 V non-punch through (NPT) insulated bipolar gate transistors (IGBTs) enable switching speeds up to 150 kHz –Â- further improved when transistors are paired with SiC free-wheeling diodes. Products are based on advanced Power MOS 8™ technology and leverage wafer thinning process, reducing total switching losses, and may be paralleled...

Read More »
Transistors

GaN Power Device features 150 V breakdown voltage.

Enabling normally off operations, Model MB51T008A features on-state resistance of 13 mΩ and total gate charge of 16 nC, achieving half FOM of silicon-based power devices with equivalent breakdown voltage. Use of WLCSP packaging enables minimal parasitic inductance and high-frequency operations. IC is suited for high- and low-sideÂ- switches in DC-DC converters employed in power supplies for...

Read More »
Electronic Drivers

Power MOSFETS and ICs from Advanced Power Electronics Corp. Now to Be Available through Premier Farnell

Competitive pricing; excellent performance San Jose, CA – Advanced Power Electronics Corp. (USA), a leading Taiwanese manufacturer of MOS power semiconductors for DC-DC power conversion applications, today announced that it has signed a franchise deal with Premier Farnell plc (LSE:pfl), a leading high service distributor of electronic components and host of the industry-leading element14...

Read More »
Miscellaneous Management Systems

Power MOSFETs feature low on-resistance.

Halogen-free and RoHS-compliant, TrenchFET® Gen III P-channel MOSFETs include -40 V SiS443DN in PowerPAK 1212-8 package and -30 V SiSS27DN in PowerPAK 1212-8S package. Units are optimized for 24, 19, and 12 V load switches as well as adapter and battery switches in wide range of applications including power management in mobile computing, smartphones, and tablets. Max on-resistance is 11.7...

Read More »
Electrical Connectors

Open Pin Field Arrays deliver high-speed performance.

High-density LP Array™ (LPAM and LPAF Series) supports high-speed applications that require reliable, high-pin count solutions inÂ- low-profile design. Available in 4, 4.5, and 5 mm mated heights with up to 180 total pins in 4 or 6 row configurations, arrays feature dual wipe contact system on 1.27 x 1.27 mm pitch grid for maximum grounding and...

Read More »
SMD Transmissive Optical Sensors operate from -40 to +125°C.
Miscellaneous Controls

SMD Transmissive Optical Sensors operate from -40 to +125°C.

Measuring 5.5 x 4 x 4 mm, single-channel TCPT1350X01 includes infrared emitter and phototransistor detector located face-to-face in surface-mount package while dual-channel TCUT1350X01 includes infrared emitter and 2 phototransistor detectors. Both AEC-Q101-qualified devices have phototransistor output andÂ- 0.3 mm aperture. Offering typical output current of 1.6 mA, sensors operate at...

Read More »
Electrical Sensors / Detectors / Transducers

Texas Instruments Builds Upon Leadership in Millimeter Wave Circuits for Short-Range Sensors

DALLASÂ- – This week at the 2013 VLSI Symposium in Kyoto, Japan, Texas Instruments Incorporated (TI) (NASDAQ: TXN) will demonstrate an industry first in millimeter wave circuits with a paper on a 160GHz center-frequency-pulsed transmitter for short-range sensor applications.  The transmitter features a higher effective isotropic radiated power (EIRP) at sub-THz frequencies than...

Read More »
Electronic Amplifiers

Toshiba Adds High Gain 200W GaN HEMT Power Amplifier for C-Band RADAR Applications

Offer High Power, Gain and Efficiency to Enhance Weather RADAR Performance SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027, -Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the addition of a 200W C-Band gallium nitride (GaN)...

Read More »
Transistors

Toshiba Expands High Power C-Band GaN HEMT Product Line to Support the SATCOM Market

Optimized for High Power, Gain and Efficiency to Support Extended C-Band Applications SEATTLE - 2013 INTERNATIONAL MICROWAVE SYMPOSIUM, Booth #2027 - Toshiba America Electronic Components, Inc. (TAEC)*, a committed leader that collaborates with technology companies to create breakthrough designs, and its parent company, Toshiba Corp., today announced the expansion of its gallium nitride high...

Read More »
Transistors

Cree Ships over Two Million GaN HEMT Devices for Telecom Infrastructure

DURHAM, N.C. – Cree, Inc. (Nasdaq: CREE) reports it has surpassed a significant milestone in shipping over two million GaN High Electron Mobility Transistors (HEMT) for cellular telecommunications and is providing game-changing benefits over traditional silicon-based technologies, including higher power, higher efficiency and wider bandwidth. As mobile devices such as smartphones are becoming...

Read More »
Oilfield Improvements® Wheeled Rod Guide® Couplings Celebrate 35th Anniversary
Sponsored

Oilfield Improvements® Wheeled Rod Guide® Couplings Celebrate 35th Anniversary

For over 35 years our Wheeled Rod Guide Couplings, have been at work in oil fields across the globe. Our products are engineered to extend the service life of sucker rods and tubing, delivering cutting-edge innovation that enhances oilfield operation, maximizes output, and enhancing overall operations. To learn about the advantages of using Wheeled Rod Guide Couplings in your wells, see our video.

Read More »

All Topics