Transistors

Transistors

MACOM to Showcase Industry-Leading Portfolio of S- and L-Band Power Devices for Radar Applications at ATM World Congress 2014, Stand #113

LOWELL, Mass. — M/A-COM Technology Solutions Inc. ( MACOM"), a leading supplier of high-performance RF, microwave and millimeter wave products, today announced that it will showcase its industry-leading portfolio of new GaN power products and high-power limiters for next-generation radar applications at the World ATM Congress in Madrid, Spain, March 4-6, 2014 Visit Stand #113 to meet with...

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Powerex SiC Modules Attain RoHS Compliance
Transistors

Powerex SiC Modules Attain RoHS Compliance

Product Description – Several Powerex SiC Modules have now been certified RoHS (Restriction of Use of Hazardous Substances) compliant: QJD1210010 and QJD1210011, Split Dual SiC MOSFET Modules QID1210005 and QID1210006, Split Dual Si/SiC Hybrid IGBT Modules RoHS regulations ban new electrical or electronic equipment containing more than agreed upon levels of specific substances, including lead,...

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Miscellaneous Software

Powerex Adds New Modules to PowerSim App

CM200DX-34SA CM600DXL-34SA CM225DX-24S1 CM300DX-24S1 CM450DX-24S1 CM600DX-24S1 Parts ending in S1 denote the 6.1 Generation NX-Series IGBT product line, incorporating the 6.1 (Carrier Stored Trench Bipolar Transistor) CSTBT™ silicon, facilitating a very efficient, economical, robust inverter design. New design effort is minimized, as the 6.1 Generation NX-Series employs the same standard...

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Radar Systems

Northrop Grumman's Scalable Agile Beam Radar (SABR) Rapidly Achieves Major Program Milestones

BALTIMOREÂ- – Northrop Grumman Corporation (NYSE: NOC) announced today that its Scalable Agile Beam Radar (SABR) has already completed several significant program development milestones. Last July, SABR was competitively selected by Lockheed Martin Corporation (NYSE: LMT) for the F-16 Radar Modernization Program (RMP). The F-16 RMP develops the new active electronically scanned array...

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Understanding Water Hammer
Sponsored

Understanding Water Hammer

DFT Inc's engineers have been working with professionals in a range of industries for decades, helping to identify and resolve the underlying causes of water hammer. In this eBook you will learn about many of these common causes, how they impact your system and some of the basic changes you can make to eliminate them. In this eBook you will learn: What causes water hammer and why it is such a persistent problem. The role design plays in reducing the risk water hammer poses to your system. DFT's professional recommendations for coping with water hammer.

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Transistors

Transphorm's 600V GaN HEMT Named Product of the Year by Electronics Products Magazine

TPH3006PS Device Garners Award for Innovative Advancement in Discrete Semiconductors Goleta, CA – Transphorm Inc. is pleased to announce that it has been honored with Electronic Products' Product of the Year Award for its TPH3006PS GaN (Gallium Nitride) device, the first 600V HEMT (High Electron Mobility Transistor) in the industry to be JEDEC qualified. The editors of Electronic Products—a...

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Asymmetric Dual N-Channel MOSFET features low on-resistance.
Transistors

Asymmetric Dual N-Channel MOSFET features low on-resistance.

Housed in 3 x 3 mm PowerPAIR® package utilizing TrenchFET Gen IV technology, 30 V Siliconix SiZ340DT is optimized for synchronous buck designs in cloud computing infrastructures, servers, telecommunication equipment, and client-side electronic devices. Low-side Channel 2 MOSFET of SiZ340DT offers low on-resistance of 5.1 mΩ at 10 V gate drive and 7.0 mΩ at 4.5 V, while high-side Channel 1...

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Electrical Isolators

Vishay Intertechnology to Highlight Latest MOSFETs, Passives, Diodes, and Optoelectronics at ELECRAMA-2014

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced its technology line-up for ELECRAMA-2014, taking place Jan. 8-12 at the Bangalore International Exhibition Center in India. In hall 3B, booth H3J12, the company will be highlighting its latest industry-leading power MOSFET, passive component, diode, and optoelectronics technologies for solar, smart grid, wind turbine, and...

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Transistors

Vishay Intertechnology's Si7655DN -20 V P-Channel MOSFET Wins EDN China 2013 Innovation Award

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its Si7655DN -20 V p-channel Gen III power MOSFET has won an EDN China 2013 Innovation Award. Presented at an award ceremony on Nov. 12 in Shanghai, the Si7655DN received a Best Product Award in the Power Devices and Modules category. The EDN China Innovation Awards were introduced in 2005 to recognize achievements in...

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Transistors

Transphorm's 600V GaN Power Conversion Adopted by Delta Electronics

Leading GaN (Gallium Nitride) innovator continues to attract global customers across multiple applications GOLETA, Calif. - Transphorm Inc. today announced that it has been invited to present at Delta Electronics' exclusive Power Design Engineering event in Shanghai, to be held Nov. 22nd, 2013. Transphorm will present its JEDEC-qualified GaN (Gallium Nitride) on Silicon HEMT (high electron...

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Semiconductors

GaN Systems Showcases Gallium Nitride Power Semiconductors at iPower 2013 - Presents Paper on Harnessing Performance Gains in the Packaging Industry

Leading experts discuss latest power electronic technologies at University of Warwick 27-28 November OTTAWA, OntarioÂ- -- GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting and presenting a technical paper at iPower 2013 Conference and Exhibition, Warwick University on 27 and 28 November. Organised by IMAPS-UK and NMI in conjunction with the...

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