New Transistors Products

MOSFET Transistors operate below and above -60 to +230

Mid-power P-channel transistors XTR2N0325 and XTR2N0350 are intended for max operation drain-source voltage of -30 V, while XTR2N0525 and XTR2N0550 can sustain drain-source voltages of up to -50 V. Respectively, on-state resistance ratings for small signal transistors XTR2N0307 (30 V P-channel MOSFET) and XTR2N0807 (80 V N-channel MOSFET) are 7 Ω and 9.1 Ω at 230-

ANSYS and Intel Collaborate to Deliver Power, EM and Reliability Sign-Off Reference Flow for Customers of Intel Custom Foundry

Collaboration Enables 14nm Design Platform for Mobile and Cloud Market Segment PITTSBURGH and SANTA CLARA, Calif. -- ANSYS, Inc. (NASDAQ: ANSS), and Intel Corporation, a world leader in computing innovation, today announced the availability of a production-proven reference flow for power, EM and reliability sign-off using ANSYS simulation solutions for Intel's 14nm Tri-Gate process. This...

Normally-Off 650 V GaN Transistors aid high-speed system design.

Normally-off 650 V GaN transistors GS66502P, GS66504P, GS66506P, and GS66508P are, respectively, 8.5 A/165 mΩ, 17 A/82 mΩ, 25 A/55 mΩ, and 34 A/41 mΩ parts. Also available, GS43106L is 30 A/60 mΩ cascode. Reverse current capability, zero reverse recovery charge, and source-sense optimize high-speed design. These RoHS-compliant devices come in near chipscale, embedded GaNPX package that...

Normally-Off 100V GaN Transistors come in low-inductance package.

Respectively, normally off 100 V GaN transistors GS61002P, GS61004P, GS61006P, and GS61008P are 20 A/21 mΩ, 40 A/11 mΩ, 60 A/8 mΩ, and 80 A/5 mΩ parts. Half bridge device, GS71008P (80 A/5 mΩ), is also available. Enhancement mode parts feature- reverse current capability, source-sense for optimal high speed design, and minimal Total Gate Charge and Reverse Recovery Charge....

Guide to Fatigue Testing

Learn what fatigue testing is and how fatigue testing service providers can determine the longevity of a part or product.

N-Channel Power MOSFETs minimize losses.

Rated at 25 V and available with or without integrated Schottky diode, Series NTMFS4Hxxx and NTTFS4Hxxx MOSFETs are suited for server and telecom switching applications, high power density DC-DC converters, and to support synchronous rectification in point-of-load modules. RDSon performance of 0.7 mΩ and low input capacitance of 3780 pF ensure conduction, switching, and driver losses are...

Transphorm Expands Distribution Channels: Products are Now Available in Europe through HY-LINE Power Components

European distributor will now offer Transphorm 600 Volt GaN HEMT devices GOLETA, Calif., – Transphorm Inc. today announced that it has completed a distribution agreement with HY-LINE Power Components GmbH to stock and distribute its family of 600 Volt GaN high electron mobility transistors (HEMTs) in Central Europe. HY-Line's technical expertise will support the growing demand for...

IGBT and Rectifier Diode Modules come in diverse package designs.

Intended for power control applications, Half-Bridge Circuit IGBT Modules come in S, D, or WD packages with ratings up to 1,200 V and 600 A. Minimized loss promotes efficiency and switching speed, while short circuit capability reduces protection requirements. With ratings up to 1,800 V and 200 A, Phase Leg and Common Cathode Circuit Rectifier Diode Modules come in S and A packages. Reverse...

Plastic Logic and Solvay Specialty Polymers Partner to Launch Low Power Solutions for Internet of Things and Wearables

Cambridge, UK – Plastic Logic, the leader in the development and industrialisation of flexible organic electronics, and Solvay Specialty Polymers, a recognised leader in polymeric materials development for the electronics sector, announced a partnership that will deliver low power flexible electronics suitable for today's ever-changing world of ubiquitous sensors, mobile displays, and wearable...

Power Conversion Driver/MOSFET works with high-performance FPGAs.

Model ET4040 monolithic 40A driver plus synchronous MOSFET powertrain enables design of point-of-load power solutions. It provides continuous output current over -40 to + 85-

Future Electronics has the 40V StrongIRFET(TM) Power MOSFET Family from International Rectifier

Pointe Claire, Quebec - Future Electronics, a global leading distributor of electronic components, has the 40V StrongIRFET™ Power MOSFET Family from International Rectifier. The family of StrongIRFET power MOSFETs features ultra low on-state resistance RDS(ON) for a wide variety of industrial applications including battery packs, inverters, Uninterruptible Power Supplies (UPS), solar inverters,...

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