Transistors

Transistors

Normally-Off 650 V GaN Transistors aid high-speed system design.

Normally-off 650 V GaN transistors GS66502P, GS66504P, GS66506P, and GS66508P are, respectively, 8.5 A/165 mΩ, 17 A/82 mΩ, 25 A/55 mΩ, and 34 A/41 mΩ parts. Also available, GS43106L is 30 A/60 mΩ cascode. Reverse current capability, zero reverse recovery charge, and source-sense optimize high-speed design. These RoHS-compliant devices come in near chipscale, embedded GaNPX package that...

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N-Channel Power MOSFETs minimize losses.
Transistors

N-Channel Power MOSFETs minimize losses.

Rated at 25 V and available with or without integrated Schottky diode, Series NTMFS4Hxxx and NTTFS4Hxxx MOSFETs are suited for server and telecom switching applications, high power density DC-DC converters, and to support synchronous rectification in point-of-load modules. RDSon performance of 0.7 mΩ and low input capacitance of 3780 pF ensure conduction, switching, and driver losses are...

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Transistors

Transphorm Expands Distribution Channels: Products are Now Available in Europe through HY-LINE Power Components

European distributor will now offer Transphorm 600 Volt GaN HEMT devices GOLETA, Calif., – Transphorm Inc. today announced that it has completed a distribution agreement with HY-LINE Power Components GmbH to stock and distribute its family of 600 Volt GaN high electron mobility transistors (HEMTs) in Central Europe. HY-Line's technical expertise will support the growing demand for...

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IGBT and Rectifier Diode Modules come in diverse package designs.
Rectifiers (Diodes)

IGBT and Rectifier Diode Modules come in diverse package designs.

Intended for power control applications, Half-Bridge Circuit IGBT Modules come in S, D, or WD packages with ratings up to 1,200 V and 600 A. Minimized loss promotes efficiency and switching speed, while short circuit capability reduces protection requirements. With ratings up to 1,800 V and 200 A, Phase Leg and Common Cathode Circuit Rectifier Diode Modules come in S and A packages. Reverse...

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Transistors

Plastic Logic and Solvay Specialty Polymers Partner to Launch Low Power Solutions for Internet of Things and Wearables

Cambridge, UK – Plastic Logic, the leader in the development and industrialisation of flexible organic electronics, and Solvay Specialty Polymers, a recognised leader in polymeric materials development for the electronics sector, announced a partnership that will deliver low power flexible electronics suitable for today's ever-changing world of ubiquitous sensors, mobile displays, and wearable...

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Electronic Drivers

Power Conversion Driver/MOSFET works with high-performance FPGAs.

Model ET4040 monolithic 40A driver plus synchronous MOSFET powertrain enables design of point-of-load power solutions. It provides continuous output current over -40 to + 85°C temperature range and input from 4.5-14 V. On-board monolithic current sense maximizes reliability and thermal performance. Powering FPGA core supply rails in single- or multi-phase configurations, unit also suits...

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Transistors

Future Electronics has the 40V StrongIRFET(TM) Power MOSFET Family from International Rectifier

Pointe Claire, Quebec - Future Electronics, a global leading distributor of electronic components, has the 40V StrongIRFET™ Power MOSFET Family from International Rectifier. The family of StrongIRFET power MOSFETs features ultra low on-state resistance RDS(ON) for a wide variety of industrial applications including battery packs, inverters, Uninterruptible Power Supplies (UPS), solar inverters,...

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JEDEC-Qualified GaN-on-Silicon HEMTs carry 600 V rating.
Transistors

JEDEC-Qualified GaN-on-Silicon HEMTs carry 600 V rating.

Low-profile, 600 V GaN-based HEMTs (high electron mobility transistors) utilize EZ-GaN™ technology. Supplied in PQFN88 packages, TPH3002LD and TPH3002LS feature 290 mΩ RDS(on), 29 nC Qrr, and low inductance for high-frequency switching capability. They also feature kelvin connection to isolate gate circuit from high-current output circuit and reduce EMI. Supplied in TO220 package,...

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Transistors

High Electron Mobility Transistors are JEDEC-qualified.

Supplied in low-profile PQFN88 packages with patented EZ-GaN™ technology, TPH3002LD and TPH3002LS are 600 V GaN HEMTs featuring 290 mΩ RDS(on), 29 nC Q(rr), and low inductance for optimal high-frequency switching capability. LD devices also feature kelvin connection to isolate gate circuit from high-current output circuit to further minimize EMI. For smaller, lower power applications,...

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Transistors

Transphorm to Present Industry Sessions on GaN at APEC 2014

Leading GaN (Gallium Nitride) innovator to offer an update on energy-efficient and compact power conversion technology; one presentation addresses long-term reliability of GaN devices, the other deals with the impact of high-frequency switching on magnetic devices. GOLETA, Calif. — Transphorm Inc. today announced that it will present two Industry Sessions" presentations at APEC 2014. Firmly...

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