Transistors

Cree SiC MOSFETs Help Power Japans Growing Solar Energy Infrastructure
Transistors

Cree SiC MOSFETs Help Power Japans Growing Solar Energy Infrastructure

Sanix Incorporated selected Crees C2M silicon carbide MOSFETs for use in their latest solar inverters to achieve the best combination of system performance, reliability and pricing DURHAM, N.C.Â- – Cree, Inc. (Nasdaq: CREE) has announced that its C2M, 1200V, 80mOhm SiC MOSFETs have been selected by Sanix Corporation, Japan, to be designed into their new 9.9kW three-phase solar inverters...

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Transistors

Leading Gallium Nitride Developer GaN Systems Signs Exclusive Worldwide Deal with Mouser Electronics

Specialist distributor brings GaN Systems' high power transistors to design engineers: ushers in era of smaller,Â-  lighter and more efficient power electronics OTTAWA, Ontario – GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, today announced it is has signed an exclusive worldwide distribution agreement with Mouser Electronics. GaN...

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Transistors

Transphorm Awarded Landmark Patents for GaN Power Conversion

Patents essential to vast majority of high voltage power conversion circuits; Expands IP portfolio to over 1,100 world-wide fundamental patents and applications GOLETA, Calif.Â- — Transphorm Inc. today announced that it has secured fundamental patents in the area of Gallium Nitride (GaN) power conversion. The United States Patent and Trademark Office (USPTO) patent number 8,816,751 titled...

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Transistors

Transphorm Partners with Tata Power Solar to Introduce India's Most Efficient Solar Inverter

Partnership provides next generation solar conversion solution, enabled by high performance Gallium Nitride (GaN) power conversion products GOLETA, Calif. — Transphorm Inc. announced today that it is partnering with Tata Power Solar, to introduce India's most efficient solar inverter using Transphorm's patented EZ-GaN™ technology. This collaboration enhances Tata Power Solar's...

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RF Power Transistors suit radar pulsed applications.
Transistors

RF Power Transistors suit radar pulsed applications.

Consisting of gold-metalized unmatched GaN on Silicon Carbide, Models MAGX-000035-015000 and MAGX-000035-01500S deliver 17 W of peak output power with 15.5 dB of power gain and 63% drain efficiency. Devices provide 50 V operation over frequency range of DC–3.5 GHz. Offered in both enhanced flanged and flangeless ceramic package, transistors have MTTF of 600 years and are suitable for civilian...

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Rapid Alert Alarm works with spill containment scales.
Leak Sensors / Detectors

Rapid Alert Alarm works with spill containment scales.

Housed inside integrated collection basin where leaks and spills are first detectable, Rapid Alert Alarm utilizes phototransistor to detect spills and activate relay switch. Relay may be used to trigger light or audible alarm, and can be integrated via PLC with other equipment facilitating automatic shutdowns, lockouts, and other safety procedures. Operating solely on opto-electric principle,...

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Transistors

HEMT Power Transistor suits L-Band pulsed radar applications.

Operating from 1,200–1,400 MHz, Model MAGX-001214-650L00 guarantees 650 W of peak power with typical 19.5 dB of gain and 60% efficiency. Gold-metalized, pre-matched GaN on Silicon Carbide transistor features very high breakdown voltages, which allow stable operation at 50 V under extreme load mismatch conditions. Assembled in ceramic flange package, transistor provides rugged performance in...

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MOSFET Transistors operate below and above -60 to +230°C range.
Transistors

MOSFET Transistors operate below and above -60 to +230°C range.

Mid-power P-channel transistors XTR2N0325 and XTR2N0350 are intended for max operation drain-source voltage of -30 V, while XTR2N0525 and XTR2N0550 can sustain drain-source voltages of up to -50 V. Respectively, on-state resistance ratings for small signal transistors XTR2N0307 (30 V P-channel MOSFET) and XTR2N0807 (80 V N-channel MOSFET) are 7 Ω and 9.1 Ω at 230°C, and continuous drain...

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Transistors

ANSYS and Intel Collaborate to Deliver Power, EM and Reliability Sign-Off Reference Flow for Customers of Intel Custom Foundry

Collaboration Enables 14nm Design Platform for Mobile and Cloud Market Segment PITTSBURGH and SANTA CLARA, Calif. -- ANSYS, Inc. (NASDAQ: ANSS), and Intel Corporation, a world leader in computing innovation, today announced the availability of a production-proven reference flow for power, EM and reliability sign-off using ANSYS simulation solutions for Intel's 14nm Tri-Gate process. This...

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Transistors

Normally-Off 100V GaN Transistors come in low-inductance package.

Respectively, normally off 100 V GaN transistors GS61002P, GS61004P, GS61006P, and GS61008P are 20 A/21 mΩ, 40 A/11 mΩ, 60 A/8 mΩ, and 80 A/5 mΩ parts. Half bridge device, GS71008P (80 A/5 mΩ), is also available. Enhancement mode parts featureÂ- reverse current capability, source-sense for optimal high speed design, and minimal Total Gate Charge and Reverse Recovery Charge....

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