Transistors

EVERLIGHT Electronics Highlights Three New High Performance Optocouplers among Its Increasing Infrared Portfolio at Electronica 2014
Electrical Isolators

EVERLIGHT Electronics Highlights Three New High Performance Optocouplers among Its Increasing Infrared Portfolio at Electronica 2014

Transistor optocouplers offer high performance with a wide temperature range up to 110°C Shulin, New Taipei CityÂ- – EVERLIGHT ELECTRONICS CO., LTD.[TSE:2393, a leading player in the global LED and optoelectronics industry, will showcase its broad and growing infrared portfolio at electronica 2014that includes infrared LEDs, photo transistors and photo diodes, infrared receiver...

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High-Power GaN HEMTs serve C-Band applications.
Transistors

High-Power GaN HEMTs serve C-Band applications.

Rated for 200 W continuous wave (CW) and 4.4–5.0 GHz operation, CGHV50200F gallium nitride (GaN) high electron mobility transistor (HEMT) suits tropospheric scatter (troposcatter) communications applications. These 50 Ω, internally matched units, whichÂ- exhibit 180 W typ PSAT, 11.5 dB typ power gain, and 48% typ power efficiency, allow solid-state power amplifiers (SSPAs) to replace...

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Transistors

Phototransistor is capable of high-temperature operation.

Available in half-pitch, mini-flat, 4-pin package, Fairchild OptoHiT™ Series model FODM8801 operates up to 125°C. Optocoupler consists of AIGaAsÂ- IR LED optically coupled to phototransistor. While primarily suited for DC-DC converters, product serves such typical applications as ground-loop isolation, signal-noise isolation, communications (adapters, chargers), consumer appliances...

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IGBT Power Modules serve solar inverter and UPS applications.
Transistors

IGBT Power Modules serve solar inverter and UPS applications.

For 3-level neutral point clamp (NPC) topologies, VS-ENQ030L120S providesÂ- collector-to-emitter breakdown voltage of 1,200 V and collector current rating of 30 A. For 3-level inverter stages, VS-ETF075Y60U and VS-ETF150Y65U respectively offer choice of 75 and 150 A collector current ratings and 600 and 650 V collector-to-emitter breakdown voltages and perform up to +175...

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Transistors

Vishay Intertechnology's Si7157DP P-Channel MOSFET Selected as Finalist for 2014 Elektra Awards

MALVERN, Pa. — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that the Vishay Siliconix -20 V Si7157DP TrenchFET® p-channel Gen III power MOSFET has been named as a finalist for the 2014 Elektra European Electronics Industry Awards in the category of Power System Product of the Year." Designed to increase efficiency in mobile computing devices, the -20 V Si7157DP offers...

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GaN HEMT Die operates up to 6 GHz.
Transistors

GaN HEMT Die operates up to 6 GHz.

Exhibiting 17 dB typical small signal gain at 6 GHz and 18 dB typical small signal gain at 4 GHz, in addition to 65% typical power added efficiency, 40 W Model CGHV60040D and 170 W Model CGHV60170D are designed for use in Class AB linear amplifiers suitable for linear, pulsed, and CW applications. Both 0.4 Â-µm, 50 V devices are supplied in Gel-Pak® Vacuum Release™ trays that...

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Transistors

TSMC Launches Ultra-Low Power Technology Platform for IoT and Wearable Device Applications

HSINCHU, Taiwan, R.O.C.,Â-  -- TSMC (TWSE: 2330, NYSE: TSM) today announced the foundry segment's first and most comprehensive ultra-low power technology platform aimed at a wide range of applications for the rapidly evolving Internet of Things (IoT) and wearable device markets that require a wide spectrum of technologies to best serve these diverse applications. In this platform, TSMC...

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GaN Systems to Show New Gallium Nitride High Power Transistors at Energy Conversion Congress and Exposition 2014
Transistors

GaN Systems to Show New Gallium Nitride High Power Transistors at Energy Conversion Congress and Exposition 2014

Wide range of devices enable smaller, lighter and more efficient power electronics for a more sustainable energy future OTTAWA, Ontario – GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is exhibiting its latest products at ECCE, the IEEE Energy Conversion Congress Expo being held in Pittsburgh, USA from September 14 – 18.  The event is the...

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Rectifiers (Diodes)

Vishay Intertechnology at Electronica 2014 Nov. 11-14

Vishay Intertechnology, Inc. (NYSE: VSH) will be exhibiting its latest industry-leading solutions for a wide variety of applications at electronica 2014, taking place Nov. 11-14 at the Munich Trade Fair Centre in Munich, Germany. In its main booth A5.142-143 and Automotive Innovation booth A6.A13-15, Vishay will be demonstrating a range of technologies in several product categories, including...

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