pseudomorphic High Electron Mobility Transistor used in 24GHz sensors.
Used in Ku and Ka Band Satellite Receiver applications, pHEMTs offer reduced noise and higher gain. Available in CE3512K2, CE3514M4, CE3520K3 and CE3521M4 microwave components, pHEMTs are suitable for applications in Low Noise Block in DBS and downconverters in VSAT systems.
Read More »pseudomorphic High Electron Mobility Transistor used in 24GHz sensors.
Used in Ku and Ka Band Satellite Receiver applications, pHEMTs offer reduced noise and higher gain. Available in CE3512K2, CE3514M4, CE3520K3 and CE3521M4 microwave components, pHEMTs are suitable for applications in Low Noise Block in DBS and downconverters in VSAT systems.
Read More »SiHP065N60E V E Series MOSFET can withstand overvoltage transients.
Housed in TO-220AB package, SiHP065N60E V E Series MOSFET features 0.065 Ω at 10 V maximum on-resistance and 49 nC gate charge down. Delivering 93 pF and 593 pF of Co(er) and Co(tr) low output capacitance respectively, unit reduces conduction and switching losses in power factor correction and hard switched DC/DC converters.
Read More »SiHP065N60E V E Series MOSFET can withstand overvoltage transients.
Housed in TO-220AB package, SiHP065N60E V E Series MOSFET features 0.065 Ω at 10 V maximum on-resistance and 49 nC gate charge down. Delivering 93 pF and 593 pF of Co(er) and Co(tr) low output capacitance respectively, unit reduces conduction and switching losses in power factor correction and hard switched DC/DC converters.
Read More »Thermal Solutions Guide: The Challenges for Heavy Equipment OEMs
In this guide, we consider some of the most common applications that require thermal solutions, such as vehicle exhausts, fuel tank shielding, and engine compartments, firewalls, & underbodies. As well as the options available to mitigate risk around combustion engines.
Read More »GaN RF Transistor are CW and pulse capable.
Available in QPD1009 and QPD1010 models, GaN SiC RF transistors housed in 3 mm x 3 mm plastic QFN package. Having 17 W at 2 GHz output power level, QPD1009 provides linear gain of 24 dB at 2 GHz. QPD1010 is 10 W, 50 V device featuring 11 W of output power level and 24.7 dB linear gain at 2 GHz. Suitable for defense and commercial radar, QPD1009 and QPD1010 features 72% and 70% at 2 Hz PAE.
Read More »GaN RF Transistor are CW and pulse capable.
Available in QPD1009 and QPD1010 models, GaN SiC RF transistors housed in 3 mm x 3 mm plastic QFN package. Having 17 W at 2 GHz output power level, QPD1009 provides linear gain of 24 dB at 2 GHz. QPD1010 is 10 W, 50 V device featuring 11 W of output power level and 24.7 dB linear gain at 2 GHz. Suitable for defense and commercial radar, QPD1009 and QPD1010 features 72% and 70% at 2 Hz PAE.
Read More »Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites
THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement. Transphorm is a global semiconductor company that develops the industry's only JEDEC-qualified...
Read More »Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites
THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement. Transphorm is a global semiconductor company that develops the industry's only JEDEC-qualified...
Read More »C3M0065100K MOSFETS provide notch between drain and source pins.
With minimal gate circuit ringing due to Kelvin gate connection, C3M0065100K Power MOSFET includes maximum junction temperature as 150 °C. Optimized for electric-vehicle charging systems and three-phase industrial power supplies, device offers output capacitance of 60 pF, output capacitance and reverse-recover time of 24 ns. As Ideal blend for conduction losses, unit features current rates at...
Read More »C3M0065100K MOSFETS provide notch between drain and source pins.
With minimal gate circuit ringing due to Kelvin gate connection, C3M0065100K Power MOSFET includes maximum junction temperature as 150 °C. Optimized for electric-vehicle charging systems and three-phase industrial power supplies, device offers output capacitance of 60 pF, output capacitance and reverse-recover time of 24 ns. As Ideal blend for conduction losses, unit features current rates at...
Read More »ISO-Certified Plastic Injection Molding from Rodon
The Rodon Group is a proven leader in high-volume, close tolerance injection molding. We offer globally competitive, innovative manufacturing solutions for a broad range of industries. Check out our video to learn more.
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