Transistors

Rectifiers (Diodes)

Future Electronics Announces the IRGP08 Series with New Gen8 Trench Gate Technology from IR

Pointe Claire, QuebecÂ- – Future Electronics, a global leading distributor of electronic components, has announced immediate availability of the IRGP08 Series featuring the new Gen8 trench gate technology from International Rectifier. The IRGP08 Series of ultra fast soft recovery diodes boast IR's new Gen8 trench gate technology, and are now in stock with immediate shipping...

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Photodiodes

Marktech Optoelectronics to Introduce Photodetectors at Photonics West

New detector products join Marktech’s wide range of emitter sensors ranging from deep UV 280nm to 1720nm short wave infrared and InGaAs/InP epitaxial wafers from 1.0um to 2.6um. Latham, NYÂ- – Marktech Optoelectronics is set to introduce its new line of photodetectors at the SPIE Photonics West Conference to be held in San Francisco’s Moscone Center February 7-12, 2015. Marktech’s...

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High-Voltage MOSFETs suit SMPS applications.
Transistors

High-Voltage MOSFETs suit SMPS applications.

Built on second-generation Super Junction Technology, 500 V Series of High-Voltage MOSFETs are optimized for operation in switch mode power supplies to 500 W. Devices range from 12–20 A with low on-resistance from 190–380 mΩ and ultra-low gate charge of 22–45 nC. Designed to withstand high energy pulse in avalanche and commutation modes, RoHS-compliant devices meet stringent 80 PLUS...

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N-Channel Power MOSFETs achieve low resistance.
Transistors

N-Channel Power MOSFETs achieve low resistance.

Part of NexFET™ product line, 25 V Model CSD16570Q5B supports max Rdson of 0.59 mΩ, while 30 V Model CSD17570Q5B achieves max Rdson of 0.60 mΩ. Both are housed in 5 x 6 mm QFN package and are suitable for hot swap and ORing applications. For low-voltage battery-powered applications, 12 V Model CSD13383F4 comes in 0.6 x 1.0 mm FemtoFET™ package with Rdson of 44 mΩ at 4.5 V.

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Trench PT/FS IGBT Platform reduces conduction, switching losses.
Transistors

Trench PT/FS IGBT Platform reduces conduction, switching losses.

SuppliedÂ- as bare die, Trench IGBT platform includes Punch Through (PT) and Field Stop (FS) technologies and increases efficiency in motor drives, UPSs, solar inverters, and welding machine inverters. Collector-to-emitter voltages, as well as fast and soft turn-on and turn-off, allow low conduction and switching losses while providing breakdown voltages to 650 V for increased...

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Transistors

GaN Systems Appoints Daito Electron to Spearhead Distribution of High Power Gallium Nitride Transistors in Japan and Korea

Partnership forged as GaN devices poised for dramatic growth: Japanese distributor strong in automotive and industrial markets OTTAWA, Ontario – GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, today announced it has signed a distribution agreement with Japanese company Daito Electron (Daitron) to distribute its gallium nitride (GaN) high power switching...

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Electronic Amplifiers

Xilinx and NXP Collaborate to Reduce CapEx and OpEx Costs of Wireless Infrastructure Radios

SAN JOSE, Calif.Â- – Xilinx, Inc. (NASDAQ: XLNX) and NXP (NASDAQ: NXPI) announced their collaboration to reduce CapEx and OpEx costs of wireless infrastructure radios. The two companies have been working together to enable customers to quickly and easily combine Xilinx's newest crest factor reduction (CFR) and digital pre-distortion (DPD) SmartCORE™ IP with NXP's Gen9 LDMOS RF...

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IGBT Power Modules control lines rated to 1,700 V-450 A.
Transistors

IGBT Power Modules control lines rated to 1,700 V-450 A.

Intended for motor control and inverter applications, IGBT Power Modules are available in half-bridge, 6-pack, and PIM module designs (standard and custom) in S, D, H, W, and WB packages with ratings up to 1,700 V and 450 A. Rugged semiconductor products, combining speed and efficiency in flexible format, offer short circuit capability and free-wheeling diodes. Positive temperature coefficient...

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Big Things Made Possible with Small Boxes - GaN Systems' Power Switching Transistors Offered to Participants in Little Box Challenge
Transistors

Big Things Made Possible with Small Boxes - GaN Systems' Power Switching Transistors Offered to Participants in Little Box Challenge

GaN Systems offers devices to teams shrinking inverters for Google and IEEE $1 Million competitionÂ-  OTTAWA, Ontario – GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, is one of a number of manufacturers offering its devices to contestants entering the Little Box Challenge launched by Google and the Institute of Electrical and Electronics Engineers...

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Gallium Nitride Devices Poised to Become Core Technology in Power Electronics: GaN Systems Showcases Broadest Product Offering on Market at Electronica
Transistors

Gallium Nitride Devices Poised to Become Core Technology in Power Electronics: GaN Systems Showcases Broadest Product Offering on Market at Electronica

From semiconductor start-up to product commercialisation in under seven years OTTAWA, Ontario – GaN Systems Inc, a leading developer of gallium nitride power switching semiconductors, says gallium nitride is set to take off dramatically and will become the core technology in power electronics within the next three years.Â-  Founded a mere seven years ago, GaN Systems has developed an...

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Krueger Sentry Gauge Announces the Release of Two New Chemical Sight Gauge Models Designed for Aggressive Liquid Storage Monitoring
Sponsored

Krueger Sentry Gauge Announces the Release of Two New Chemical Sight Gauge Models Designed for Aggressive Liquid Storage Monitoring

Krueger Sentry Gauge, a leader in chemical sight gauges, now offers the ultimate in aggressive liquid storage monitoring devices. From sulfuric and hydrochloric acid to bleach, and acetone, our products are designed with robust features that deliver a long and trouble-free service life. See our video to learn all about this new and innovative line of sight gauges.

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