Transistors

GaN Power Transistor offers current capability up to 60 A.
Transistors

GaN Power Transistor offers current capability up to 60 A.

Based on FOM Island Technology® die design, GS66516T 650 V E-Mode Power Switch features topside cooling configuration, which allows it to be cooled using conventional heat sink or fan cooling. Device includes reverse current capability, integral source sense, and zero reverse recovery loss. Housed in 9.0 x 7.6 x 0.45 mm GaNPX™ packaging, transistor is suited for on-board battery chargers,...

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Electronic Amplifiers

Microsemi Extends Leadership in Differentiated Products by Introducing 13 New RF, Microwave and Millimeter Wave Devices at IMS 2015

New Product Exhibitions Featured in Phoenix, Arizona May 17-22 ALISO VIEJO, Calif. - Microsemi Corporation (Nasdaq: MSCC), a leading provider of semiconductor solutions differentiated by power, security, reliability and performance, today announced it will feature 13 new products from its radio frequency (RF), microwave and millimeter wave integrated circuits (ICs), modules, monolithic microwave...

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GaN HEMT Devices handle TWT radar system issues.
Transistors

GaN HEMT Devices handle TWT radar system issues.

Offering pulsed saturated power performance greater than 400 W, Model CGHV59350 is used in ground-based defense and Doppler weather radar systems. C-Band device operates over 5.2–5.9 GHz bandwidth and exhibits 60% typ drain efficiency. Delivering 700 W of saturated RF pulsed power, Model CGHV31500F is suited for ATC radar systems. S-Band unit operates over 2.7–3.1GHz bandwidth and exhibits 12...

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Cree to Introduce New C - Ku Band Products at IMS 2015
Transistors

Cree to Introduce New C - Ku Band Products at IMS 2015

Cree, Inc., a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs), is introducing two industry-leading new products and contributing to a series of workshop presentations about current trends in GaN packaging at the 2015 International Microwave Symposium (IMS). Recognized as the industry's premier annual...

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Air Amplifiers and How They Work
Sponsored

Air Amplifiers and How They Work

Air amplifiers are pneumatically driven devices that use shop air to provide the motive power for increasing air pressure. This white paper provides an in-depth overview into the air amplifiers and how they work.

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FlexEnable to Enhance the Global Graphene Value Chain
Transistors

FlexEnable to Enhance the Global Graphene Value Chain

CAMBRIDGE, England – FlexEnable, the leader in the development and industrialisation of flexible electronics, has announced its participation in the Graphene Flagship, the EU's biggest ever initiative in the field of graphene and related materials. FlexEnable has a track record of groundbreaking graphene innovation and industrialisation. Last year the company successfully demonstrated a...

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Broadband GaN HEMTs suit applications to 4 GHz.
Transistors

Broadband GaN HEMTs suit applications to 4 GHz.

Available in 2-leaded flange and pill packages, Model CGHV40050 operates from 50 V rail and delivers 50 W typ output power up to 4 GHz. Device provides 17.5 dB small signal gain at 1.8 GHz and 55% efficiency at PSAT. Rated for operating junction temperature of 225°C and case operating temperature spanning -40 to +80°C, transistor is suited for RF and microwave applications, including...

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Fuel Cells

Dana Showcases Advancements in Fuel-cell Components at Hannover Messe 2015

MAUMEE, Ohio,– Â- Dana Holding Corporation (NYSE: DAN) announced today it will showcase its innovative metallic bipolar plate technology, among other fuel-cell components, at Hannover Messe 2015, April 13-17. The company also will provide a detailed overview of its fuel-cell work as a participant in the Auto-Stack CORE network, an important initiative to establish an industrial core for a...

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Cree Announces Large Signal Accuracy
Transistors

Cree Announces Large Signal Accuracy

Cree, Inc., a leading global supplier of gallium nitride on silicon carbide (GaN-on-SiC) high electron mobility transistors (HEMTs), has released a new application note describing the remarkable accuracy of its large signal models for RF power transistors, which allow RF design engineers to reduce PA design iterations, design time, and development costs. Cree’s GaN HEMT devices are growing...

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Electronic Amplifiers

Cree to Exhibit and Sponsor Awards at WAMICON 2015

Cree, Inc., a leading global supplier of silicon carbide (SiC) and gallium nitride (GaN) wafers and devices, is exhibiting at, chairing, and sponsoring this year’s IEEE Wireless and Microwave Technology Conference (WAMICON)Â- - the leading conference for addressing developments in microwave and RF wireless technologies - which will take place April 13–15, 2015 in Cocoa Beach, FL....

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Compact Power MOSFET is designed for automotive applications.
Transistors

Compact Power MOSFET is designed for automotive applications.

Offering alternative to DÂ-²PAK and DPAK devices used in automotive applications, AEC-Q101-qualified SQJQ402E comes in 100% lead (Pb)-free, 8 x 8 x 1.8 mm PowerPAK® 8x8L package featuring gull-wing leads for mechanical stress relief. This 40 V TrenchFET® power MOSFET, operating to +175°C, features internal construction that minimizes inductance and enables...

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Vector® Sports Training Ball Offers Visible Point of Contact
Sponsored

Vector® Sports Training Ball Offers Visible Point of Contact

Our goal is to help every athlete derive maximum enjoyment from their sport and become a better player. We offer a line of innovative training tools that combine cutting-edge technology and out of the box thinking to deliver an unbeatable competitive advantage. The Vector® Sports Training Ball is just another example of our commitment to innovation. To learn how the Vector® is helping ballplayers everywhere, see our video.

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