Transistors

New High-Voltage Super Junction MOSFET Comes with a Breakdown Voltage of 900 V
Transistors

New High-Voltage Super Junction MOSFET Comes with a Breakdown Voltage of 900 V

The 90R1K4P High-Voltage Super Junction MOSFET is available in I-PAK and D-PAK package types. The unit features a maximum peak voltage of 950 V. It is suitable for high-voltage applications such as industrial smart metering, in both AC/DC and DC/DC high-speed switching converters and as a power supply for lighting equipment. The MOSFET's low total gate charge increases the switching speed and...

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New Avionics Transistor from Integra Technologies Features 120W Peak Output Power
Transistors

New Avionics Transistor from Integra Technologies Features 120W Peak Output Power

Integra Technologies’ new IGN1011L120 is an IFF avionics transistor uses GaN/SiC technology. It is designed for IFF avionic applications and is a high power GaN transistor. The transistor is specified for use under Class AB operation. The IGN1011L120 operates at 1.03 - 1.09 GHz, and has a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. It is made with chip and...

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New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018
Transistors

New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018

Integra displays new RF power devices at International Microwave Symposium. IGNP0912L1KW, an RF power module offers high thermal stability and supplies 1000 W of peak pulse power under the conditions of 2.5ms pulse width. IGT5259L50, a 50-ohm GaN/SiC transistor features 50W at 5-6 GHz and is ideal for pulsed C-band radar applications. IGN1214L500B high power GaN/SiC HEMT transistor includes 50V...

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Integra Introduces New 50-Ohm Matched Power Devices for Pulsed Radar Applications
Transistors

Integra Introduces New 50-Ohm Matched Power Devices for Pulsed Radar Applications

Integra Power Devices include RF power Module (IGNP0912L1KW) and GaN/SiC transistors (IGT5259L50 and IGN1214L500B). IGNP0912L1KW module is operated over instantaneous bandwidth of 0.960-1.215 GHz and delivers 1000 W of minimum peak pulse power with 2.5 ms pulse width and 20% duty cycle. IGN1214L500B transistor is suitable for L-band radar applications and provides 500 W of power at 1.2-1.4 GHz,...

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New GaN-on-SiC Transistors are Assembled Using Chip and Wire technology
Transistors

New GaN-on-SiC Transistors are Assembled Using Chip and Wire technology

GaN-on-SiC Transistors from Integra Technologies are available in IGT2731M130 (130 W) and IGT3135M135 (135 W) models. IGT2731M130 unit is operated in 2.7 to 3.1 GHz frequency range with gain of 13.5 dB whereas the IGT3135M135 model in 3.1 to 3.5 GHz range. Units come in 20.32 mm wide and 10.16 mm long PL44A1 metal-based package with a ceramic-epoxy lid sealing. Designed for S-band radar...

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