Transistors

MagnaChip to Commence Volume Production of High-Voltage IGBT Products for Power Module Targeted to Industrial Applications
Transistors

MagnaChip to Commence Volume Production of High-Voltage IGBT Products for Power Module Targeted to Industrial Applications

- IGBT P-series features 1200V, 100A and wide SOA (Safe Operating Area) for industrial applications, including 10kW+ 3-phase motors and photovoltaic inverters - SEOUL, South Korea and SAN JOSE, Calif., Nov. 26, 2018 /PRNewswire/ -- MagnaChip Semiconductor Corporation ("MagnaChip") (NYSE: MX), a designer and manufacturer of analog and mixed-signal semiconductor platform solutions, today...

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New High-Voltage Super Junction MOSFET Comes with a Breakdown Voltage of 900 V
Transistors

New High-Voltage Super Junction MOSFET Comes with a Breakdown Voltage of 900 V

The 90R1K4P High-Voltage Super Junction MOSFET is available in I-PAK and D-PAK package types. The unit features a maximum peak voltage of 950 V. It is suitable for high-voltage applications such as industrial smart metering, in both AC/DC and DC/DC high-speed switching converters and as a power supply for lighting equipment. The MOSFET's low total gate charge increases the switching speed and...

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New Avionics Transistor from Integra Technologies Features 120W Peak Output Power
Transistors

New Avionics Transistor from Integra Technologies Features 120W Peak Output Power

Integra Technologies’ new IGN1011L120 is an IFF avionics transistor uses GaN/SiC technology. It is designed for IFF avionic applications and is a high power GaN transistor. The transistor is specified for use under Class AB operation. The IGN1011L120 operates at 1.03 - 1.09 GHz, and has a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. It is made with chip and...

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New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018
Transistors

New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018

Integra displays new RF power devices at International Microwave Symposium. IGNP0912L1KW, an RF power module offers high thermal stability and supplies 1000 W of peak pulse power under the conditions of 2.5ms pulse width. IGT5259L50, a 50-ohm GaN/SiC transistor features 50W at 5-6 GHz and is ideal for pulsed C-band radar applications. IGN1214L500B high power GaN/SiC HEMT transistor includes 50V...

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Integra Introduces New 50-Ohm Matched Power Devices for Pulsed Radar Applications
Transistors

Integra Introduces New 50-Ohm Matched Power Devices for Pulsed Radar Applications

Integra Power Devices include RF power Module (IGNP0912L1KW) and GaN/SiC transistors (IGT5259L50 and IGN1214L500B). IGNP0912L1KW module is operated over instantaneous bandwidth of 0.960-1.215 GHz and delivers 1000 W of minimum peak pulse power with 2.5 ms pulse width and 20% duty cycle. IGN1214L500B transistor is suitable for L-band radar applications and provides 500 W of power at 1.2-1.4 GHz,...

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Locon Sensors Withstand Extreme Temperatures
Sponsored

Locon Sensors Withstand Extreme Temperatures

Locon Sensor Systems offer robust sensor solutions for even the most severe environmental conditions. Their line of high-temp inductive sensors and their cylindrical photoelectric series can operate in temperatures up to 250 degrees Celsius. See our video to learn more.

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