Transistors

New Avionics Transistor from Integra Technologies Features 120W Peak Output Power
Transistors

New Avionics Transistor from Integra Technologies Features 120W Peak Output Power

Integra Technologies’ new IGN1011L120 is an IFF avionics transistor uses GaN/SiC technology. It is designed for IFF avionic applications and is a high power GaN transistor. The transistor is specified for use under Class AB operation. The IGN1011L120 operates at 1.03 - 1.09 GHz, and has a minimum of 120W of peak pulse power, at 50V bias voltage and 6.4% duty factor. It is made with chip and...

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New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018
Transistors

New RF Power Transistors and Integrated RF Power Modules for Pulsed Radar Applications Showcased at IMS 2018

Integra displays new RF power devices at International Microwave Symposium. IGNP0912L1KW, an RF power module offers high thermal stability and supplies 1000 W of peak pulse power under the conditions of 2.5ms pulse width. IGT5259L50, a 50-ohm GaN/SiC transistor features 50W at 5-6 GHz and is ideal for pulsed C-band radar applications. IGN1214L500B high power GaN/SiC HEMT transistor includes 50V...

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Integra Introduces New 50-Ohm Matched Power Devices for Pulsed Radar Applications
Transistors

Integra Introduces New 50-Ohm Matched Power Devices for Pulsed Radar Applications

Integra Power Devices include RF power Module (IGNP0912L1KW) and GaN/SiC transistors (IGT5259L50 and IGN1214L500B). IGNP0912L1KW module is operated over instantaneous bandwidth of 0.960-1.215 GHz and delivers 1000 W of minimum peak pulse power with 2.5 ms pulse width and 20% duty cycle. IGN1214L500B transistor is suitable for L-band radar applications and provides 500 W of power at 1.2-1.4 GHz,...

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New GaN-on-SiC Transistors are Assembled Using Chip and Wire technology
Transistors

New GaN-on-SiC Transistors are Assembled Using Chip and Wire technology

GaN-on-SiC Transistors from Integra Technologies are available in IGT2731M130 (130 W) and IGT3135M135 (135 W) models. IGT2731M130 unit is operated in 2.7 to 3.1 GHz frequency range with gain of 13.5 dB whereas the IGT3135M135 model in 3.1 to 3.5 GHz range. Units come in 20.32 mm wide and 10.16 mm long PL44A1 metal-based package with a ceramic-epoxy lid sealing. Designed for S-band radar...

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Vishay Intertechnology to Showcase Latest MOSFET, IC, Passive Component, and Diode Technologies at APEC 2018
Rectifiers (Diodes)

Vishay Intertechnology to Showcase Latest MOSFET, IC, Passive Component, and Diode Technologies at APEC 2018

MALVERN, Pa. - March 5, 2018 - Vishay Intertechnology, Inc. (NYSE: VSH) today announced its product lineup for the Applied Power Electronics Conference and Exposition (APEC) 2018, taking place March 4-8 in San Antonio, Texas. Exhibiting in booth 609, Vishay will highlight its latest industry-leading power IC, passive component, diode, and MOSFET technologies for a wide range of applications. At...

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AFT31150N RF Power LDMOS Transistor offers 2700-3100 MHz operating range.
Transistors

AFT31150N RF Power LDMOS Transistor offers 2700-3100 MHz operating range.

AFT31150N RF Power LDMOS Transistor is suitable for applications operating in 2700–3100 MHz frequency range such as S-band radar systems, maritime radar and weather radar applications. Having a thermal resistance of 0.042 °C/W and P1dB of +51.8 dBm, unit provides a power gain of 17.0 dB at 3100 MHz with an efficiency of 50%. Product is tested to operate up to a maximum of 32 VDD operations and...

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IGT5259L50 GaN/SiC Transistor features a gain of 14 dB.
Transistors

IGT5259L50 GaN/SiC Transistor features a gain of 14 dB.

IGT5259L50 GaN/SiC Transistor is suitable for C-band pulsed radar applications. Unit offers 50W of peak pulsed output power at 50V drain bias and covers frequency range from 5.2 to 5.9 GHz. Product is housed in 20.32 Wide x 10.16 mm long RoHS-compatible flange-mount package with gold metallization and is fully-matched to 50 Ω. Transistor meets MIL-STD-750D specifications.

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GaN Field Effect Transistors are offered in hermetically sealed package.
Transistors

GaN Field Effect Transistors are offered in hermetically sealed package.

GaN Field Effect Transistors are offered in ISL70023SEH (100V, 60A) and ISL70024SEH (200V, 7.5A) models. ISL70023SEH offer a total gate charge of 14nC and with RDSON of 5mΩ whereas and ISL70024SEH provide 2.5nC and 45mΩ respectively. ISL70040SEH FET driver is designed for supplying ISL7002xSEH GaN FETs. This driver operates on 4.5 V to 13.2 V supply voltage. FETs are housed in 4-lead 9.0 mm x...

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RF Power LDMOS Transistor handles VSWR of more than 20:1.
Transistors

RF Power LDMOS Transistor handles VSWR of more than 20:1.

Available in AFV10700H / AFV10700HS models in bolt-down and solder-down styles, RF Power LDMOS Transistor is housed in NI-780 air cavity package. Operating in 960-1215 MHz frequencies, unit is suitable for defense and commercial pulse applications such as friend or foe (IFF), secondary surveillance radars and ADS-B transponders. Transistor offers a power density of 700 W in 1.3 x 2.6 in. 50-ohm...

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