RF Components

RFMD® Selected to Enable LG's Next-Generation 3G/4G Smartphones

PowerSmart(TM) And WiFi Design Wins Secured In Multiple Devices, Including World's First Full 3D Smartphone BARCELONA, Spain -- RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced that RFMD's PowerSmart(TM) power platforms and WiFi front end modules have been...

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RFMD® Unveils Portfolio of Cellular Front End Modules for 3G/4G Switch and Signal Conditioning Applications

BARCELONA, Spain -- RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced the addition of four new products to RFMD's expanding portfolio of front end modules for 3G/4G switch and signal conditioning applications. RFMD's switch and signal conditioning product...

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RF Power Transistor supports Green architecture.

RF Power Transistor supports Green architecture.

Operating over frequency range of DC to 3 GHz, 75 Watt Model RF3932 delivers peak efficiency of greater than 65%. Gallium nitride Unmatched Power Transistor is housed in hermetic, flanged, ceramic 2-leaded package that leverages heat sink and power dissipation technologies for thermal stability and conductivity. Unit is optimized for both driver and/or output stages, depending on overall power...

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ZigBee® RF Modules operate on 2.4 GHz ISM band.

With ultra-small footprint just over 3 cm-², @ANY2400SC IEEE 802.15.4/ZigBee RF Module comes in 2 models: @ANY2400SC-1 featuring integrated chip antenna and @ANY2400SC-2 with U.FL connector. Modules are built around Atmel's ATmega128RFA1, which combines AVR microcontroller and 2.4 GHz RF transceiver, resulting in single-chip devices with link budget of 103.5 dBm. Both work with various wireless...

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RF Micro Devices® Awarded $1.5 Million Navy Contract for GaN RF Power Technology

R&D Contract Backlog Over Next Six Quarters Increases to $5 Million GREENSBORO, N.C. -- RF Micro Devices (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today that it has been awarded a $1.5 million R&D contract by the Office of Naval Research (ONR) related to gallium nitride (GaN)...

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RFMD® Unveils New Family of Integrated Configurable Components

Innovative New Components Deliver Industry-Leading Performance, Superior Functional Integration and Extended Range GREENSBORO, N.C. -- RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, today announced a new family of integrated configurable components for multiple markets. The...

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Plessey Semiconductors Announces Development of 8-inch SiGe BiCMOS Technology to Expand RF Capability

Plymouth, ENGLAND - Plessey Semiconductors today announced it has commenced the development of a 0.35 micron silicon germanium (SiGe) BiCMOS process technology on its 8-inch line at its Plymouth, England semiconductor manufacturing facility. As part of its strategy of developing its three core product lines of sensors, RF components and power management devices it was decided that a bespoke SiGe...

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RFMD® to Showcase Portfolio of Industry-Leading Wired Broadband Components at SCTE Cable-Tec Expo 2010

Company Also Announces Availability of 2010 Wired Broadband Product Selection Guide GREENSBORO, N.C. - RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today the Company will showcase its portfolio of industry-leading wired broadband components at the SCTE Cable-Tec...

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WiFi Front End Module targets dual-band applications.

Suited for mobile computing and access piont WiFi applications, Model RF5608 integrates components for 2.4-2.5 GHz and 4.9-5.85 GHz ISM bands, including power amplifiers (PA), low noise amplifiers, power detector circuitry, and diplexer with full harmonic filtering. Three-stage PAs provide linear output power of 18 dBm in 2.4-2.5 GHz frequency range and 16 dBm in 4.9-5.85 GHz frequency range....

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Molex to Showcase Expanded RF/Microwave Product Lines at IMS 2010

Molex to Showcase Expanded RF/Microwave Product Lines at IMS 2010

Molex to feature extensive RF and microwave product offerings from subsidiary Tean Telecom & Appliance LISLE, Ill. - Molex Incorporated announced today that it will feature an expanded line of RF and microwave product offerings at the 2010 IEEE MTT International Microwave Symposium, booth 1517, May 25-27 in Anaheim, CA. Molex extended its RF and microwave product capabilities with the 2009...

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