Photoresists

Negative I-Line Photoresist has hydrophobic cured chemistry.
Electronics Coolers

Negative I-Line Photoresist has hydrophobic cured chemistry.

With formulation optimized for spin coating and processing on micro-electromechanical systems (MEMS) and IC wafers, NR-2500 Liquid Negative Photoresist has cured chemistry that provides resistance toÂ- moisture and corrosive chemicals. Product is compatible with EMS dry-film photoresists and features glass transition temperature of 165°C and moderate modulus of 4.5 GPa...

Read More »
Dry Film Negative Photoresist is designed for MEMS.
Photoresists

Dry Film Negative Photoresist is designed for MEMS.

Optimized for hot roll lamination and processing on Micro-Electro-Mechanical Systems (MEMS) and IC wafers, DF-1014 comes in various thickness formats from 5–50 Â-µm, ±5% and features glass transition temperature of 145°C and moderate modulus of 4.5 GPa at 25°C. Exhibiting resistance to extreme moisture conditions and corrosive chemicals, cured chemistry can withstand...

Read More »
Photoresist employs optimized coating rheology.
Photoresists

Photoresist employs optimized coating rheology.

Offering 24-48 hr of stackability, Photoposit(TM) SN 68V Photoresist exhibits resistance to mechanical and handling damage. It also exhibits resolution capability of 25 micron lines and spaces, while minimal foaming characteristics can eliminate need for antifoam addition to developer. Able to be used in manual and automatic exposure equipment, product is resistant to acid-based etchants and...

Read More »
Coatings

Dry Film Adhesive cures at 150°C.

Pre-manufactured with thickness uniformity, DuPont(TM) PerMX(TM) 3000 can cover or tent holes in substrate and provide reliable bonding in 5 min cycle. Negative tone, photodielectric epoxy material offers both corrosion and chemical resistance. With greater than 4:1 aspect ratio, straight vertical sidewalls, and thermal resistance, product is suited for applications in 3D, through silicon via,...

Read More »
Dry Film Dielectric Photoresist is intended for 3D TSVs.
Photoresists

Dry Film Dielectric Photoresist is intended for 3D TSVs.

SINR series siloxane-based negative photoresist film, available in 12-100 micron thicknesses, will flow into vias to produce void-free dielectric fill and planarized surface. Suited for 3D Through-Silicon Vias (TSVs) and 2D wafer bonding applications, vacuum laminated dry films exhibit minimal residual stress with 90 MPa modulus that produces rubbery consistency and minimizes wafer bow....

Read More »
Photoresists

E-Beam Photoresists help define features as small as 6 nm.

Enabling development of direct-write lithography processing technology, XR-1541 photoresists allow patterning with electron beams for maskless lithography technology. Products consist of hydrogen silsesquioxane resin in carrier solvent of methylisobutylketone and are available in various high-purity, semiconductor-grade formulations. Negative-tone resists can be used with standard spin-on...

Read More »
Photoresists

Photoresist Strip Product adresses BEOL/FEOL applications.

Alpine(TM) system is designed to meet requirements of photoresist strip processes on back-end-of-line (BEOL) and front-end-of-line (FEOL) applications for future technology nodes. While etch chamber offers optimal profile control, inductively coupled plasma source and bias capability enables independent control of ion energy and density at low pressures to minimize damage to low-k materials for...

Read More »
Photoresists

New Silicon-Infused Bilayer Photoresist Developed by TOK and Dow Corning Electronics Being Used in IC Memory Production

Photoresist Provides Improved Etch Selectivity While Eliminating Hard Mask Layer For Simpler, More Cost-Effective Processing MIDLAND, Mich., Dec. 3 - Tokyo Ohka Kogyo Co., Ltd. (TOK) and Dow Corning Electronics today announced that their new, jointly developed bilayer photoresist is being used in production for the first time by a leading manufacturer of DRAM chips. The new bilayer photoresist...

Read More »
Photoresists

Bilayer Photoresist handles sub-65nm lithography.

Bilayer photoresist uses silicon polymer in imaging layer to optimize etch selectivity for addressing demands of sub-65nm lithography. Level of silicon content also eliminates need for separate hardmask layer and accompanying process steps. Photoresist exhibits no detectable levels of outgassing during lithography process, and etch selectivity lends to successful transfer of smaller circuit...

Read More »
Photoresists

Dry Photoresists provide wafer bumping.

Series WB Photoresists offer alternative for wafer bumping versus liquid resists. Thick, dry photoresists, ranging from 50-100 microns, are applied in one step, with no solvents or drying required. Range of formulations are available for use in lead-free, photostencil, and standard electroplating applications.

Read More »

All Topics