Photoresists

Bilayer Photoresist handles sub-65nm lithography.

Bilayer photoresist uses silicon polymer in imaging layer to optimize etch selectivity for addressing demands of sub-65nm lithography. Level of silicon content also eliminates need for separate hardmask layer and accompanying process steps. Photoresist exhibits no detectable levels of outgassing during lithography process, and etch selectivity lends to successful transfer of smaller circuit...

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