Photodiodes

Silicon Photodiode-Preamplifier features 100 Kohm gain.
Photodiodes

Silicon Photodiode-Preamplifier features 100 Kohm gain.

Hermetically sealed in TO-39 can for integration into new or existing systems, 5 mmÂ-² Model ODA-5WB-100K offers wavelength response of 28 V/mW at 450 nm, responsivity range from 400-1,100 nm, and peak spectral response of 940 nm. Blue/green-enhanced device features storage and operating temperatures from -25 to +100°C, and is suited for industrial and biomedical applications, such as...

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NIR Photodiode-Preamp Combo has optimized gain, sensitivity.
Photodiodes

NIR Photodiode-Preamp Combo has optimized gain, sensitivity.

Supplied in hermetically-sealed TO-39 package, NIR/Red Enhanced 6 mmÂ-² ODA-6W-500M Photodetector-Preamplifier features high gain in low light environments. Low-light, high-sensitivity component has active area that operates in NIR wavelength with response at 940 nm (typically 315 V/µW, min 290). Based on shielded amplifier electronics, standard unit offers 500 Mohm gain. Custom...

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Photodetector-Preamplifier suits low-light-level tasks.
Photodiodes

Photodetector-Preamplifier suits low-light-level tasks.

Suited for tight spaces, 6 mmÂ-² Model ODA-6W-100M includes shielded amplifier electronics and operates in NIR wavelength with response at 940 nm. Standard version features 500 MW gain with custom gains also available. Housed in hermetically sealed TO-39 package, infrared component's operating and storage temperature ranges from -25 to +100°C. Device is suited for applications in low...

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Photodiodes

Photodiode and Receiver deliver 40G error-free performance.

Offering linearity with third order intercept point as high as 50 dBm, 40 Gbps photodiode and receiver feature differential GPPO RF outputs that enable reception of all pre-amplified and unamplified 40G modulation formats. Receiver package interfaces to commercial CDR/DEMUX modules, and products address several modulation formats: ASK, DPSK, and DQPSK. Receiver configurations include single,...

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Photodiodes

NIR Photodiode-Preamp Combo suits medical applications.

Packaged in hermetically sealed TO-39 can, Near-Infrared (NIR) Red-Enhanced 5 mmÂ-² ODA-5W-100K Photodiode-Preamplifier combination device offers 500 MW gain. High-sensitivity, NIR wavelength response at 940 nm is 63 V/mW (typ) and 55 V/mW (min). With operating and storage temperature ranges of -25 to +100°C, product suits applications such as medical diagnostics, test and measurement,...

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UV/EUV Photodiodes are designed for stable operation.
Photodiodes

UV/EUV Photodiodes are designed for stable operation.

Featuring 10 x 10 mmÂ-² active area, SXUV 100 Ultraviolet/Extreme Ultraviolet (UV/EUV) Photodiode has nitrided metal silicide front window that permits operation without loss of performance in high-humidity and other environmental conditions that normally require sealed packages. Photon detector is designed for long-lifetime operation in high-particle flux environments without loss of...

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Surface Mount Photodiodes sense ambient light.
Photodiodes

Surface Mount Photodiodes sense ambient light.

Qualified to AEC Q101 automotive standard, Models TEMD6010FX01 and TEMD5510FX01 utilize infrared filtering epoxy technology to match spectral sensitivity of human eye with minimal sensitivity to light beyond visible range. Photodiodes provide linear response to illuminance from 0.1 lux to 100 klux with lot-to-lot repeatability over extended operating temperature range of -40°C to...

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Photodiodes

Bi-Cell Photodiode features high spectral response.

With chip dimensions of .100 x .048 in. (per element), red enhanced ODD-3W-2 Bi-Cell Photodiode offers spectral response of 0.55 A/W at 900 nm and shunt resistance at 250 MW min. This low-noise product comes in TO-5 cans to facilitate integration and operates over -40 to +125°C range. Uses include position sensing applications, emitter alignment, test and measurement, and other industrial...

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Photodiodes

Discovery Semiconductors Provides High Optical Power Handling Photodiodes for Low Phase Noise Opto-Electronic Oscillators

Discovery Semiconductors, Inc., has provided high optical power handling, 12 GHz InGaAs photodiodes to the optoelectronic group of the Institut d'Electronique, de Microelectronique et de Nanotechnologie (IEMN) in France, led by Prof. Didier Decoster for their research in opto-electronic oscillators. The opto-electronic oscillator is a special class of oscillator that is based on converting...

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Photodiodes

German Researchers Use Discovery Semiconductors' 20 Gb/s Multimode Optical Receivers to Characterize 980 nm VCSELs

October 20, 2006 - Discovery Semiconductors, based in Ewing, NJ, has provided 25 GHz multimode (MM) photodiodes to the Technical University of Berlin for their research on directly modulated 980 nm lasers. Prof. D. Bimberg, with the Technical University of Berlin, led a collaborative group of researchers from the Center for Nano Photonics, Nanosemiconductor GmbH in Dortmund as well as that of...

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