Photodiodes

EVERLIGHT Electronics Highlights Three New High Performance Optocouplers among Its Increasing Infrared Portfolio at Electronica 2014
Photodiodes

EVERLIGHT Electronics Highlights Three New High Performance Optocouplers among Its Increasing Infrared Portfolio at Electronica 2014

Transistor optocouplers offer high performance with a wide temperature range up to 110°C Shulin, New Taipei CityÂ- – EVERLIGHT ELECTRONICS CO., LTD.[TSE:2393, a leading player in the global LED and optoelectronics industry, will showcase its broad and growing infrared portfolio at electronica 2014that includes infrared LEDs, photo transistors and photo diodes, infrared receiver...

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High-Speed Photodiode features 5 mm circular active area.
Photodiodes

High-Speed Photodiode features 5 mm circular active area.

Suitable for extreme UV detection covering 1–200 nm, Model SXUV20HS1 dissipates optical energy of high-powered UV lasers without typical measurement degradation that occurs with prolonged exposure to UV. Unit features 19.7 mmÂ-² sensitive area, 5 micron grid lines, and 100 micron pitch, as well as 5 MΩ shunt resistance and capacitance from 200–800 pF. With reverse breakdown voltage at...

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Photodiodes

Vishay Intertechnology at Electronica 2014 Nov. 11-14

Vishay Intertechnology, Inc. (NYSE: VSH) will be exhibiting its latest industry-leading solutions for a wide variety of applications at electronica 2014, taking place Nov. 11-14 at the Munich Trade Fair Centre in Munich, Germany. In its main booth A5.142-143 and Automotive Innovation booth A6.A13-15, Vishay will be demonstrating a range of technologies in several product categories, including...

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Silicon PIN Photodiodes offer sensitive area of 0.85 mm².
Photodiodes

Silicon PIN Photodiodes offer sensitive area of 0.85 mm².

Available in clear- and black-epoxy 1206 surface-mount packages with 900 nm and 950 nm wavelengths of peak sensitivity, respectively, Models VEMD6010X01 and VEMD6110X01 provide reverse light current of 9.5 Â-µA and low dark current of 1 nA. AEC-Q101-qualified devices are optimized for photo detection in light curtains, light barriers, metering systems, and rain/sun sensors. Measuring 4 x 2 x...

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Photodiodes

Windowless Photodiode features circular active area.

Housed in TO-39, 3-pin windowless package that delivers responsivity down to 1 nm, Model SXUV features active area of ∅2.5 mm and minimum shunt resistance of 20 MΩ at ±10 mV. Additional device parameters include reverse breakdown voltage of 20 V, with capacitance of 1 nF and response time of 1–2 ns. Operating from -10 to 40°C ambient, photodiode is suited for high power laser...

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Photodiodes

Advanced Photonix, Inc. Announces 10G APD ROSA Products

ANN ARBOR, Mich.Â- – Picometrix®, LLC, an Advanced Photonix® company (NYSE MKT: API) and the leading independent supplier dedicated to the design and manufacture of high performance optical receiver components for communications networks and test equipment, today announced sample availability of its avalanche photodiode (APD) receiver optical sub-assembly (ROSA). General...

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Avalanche Photodiode operates at 3.5 GHz.
Photodiodes

Avalanche Photodiode operates at 3.5 GHz.

Featuring 30 Â-µm InGaAs mesa structure, LAPD 1550-30R offers broad voltage breakdown curve of 30–40 V with typical response of 37 V. Low-noise unit operates from -40 to 85° C and from 1,260–1,650 nm with typical operational wavelength at 1,550 nm. Housed in hermetically sealed, 3-pin, TO46 package with lens cap, RoHS-compliant photodiode is suited for applications in...

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IR Emitter/Photodiode Pairs suit IR touch panels.
Photodiodes

IR Emitter/Photodiode Pairs suit IR touch panels.

Supplied in 3 x 2 mm side-view surface-mount packages, AEC-Q101-qualified VSMB10940X01/VEMD10940FX01 have 1 mm profile, while VSMB11940X01/VEMD11940FX01 offer 0.6 mm profile. VSMB emitters, featuring GaAIAs multi quantum well technology, provide radiant intensity of 1 mW/sr at 20 mA, forward voltage of 1.3 at 20 mA, and switching time of 15 ns. VEMD silicon PIN photodiodes offer reverse light...

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Single Active Area Photodiode permits detection to 1 nm.
Photodiodes

Single Active Area Photodiode permits detection to 1 nm.

Offering stable response after exposure to EUV/UV conditions, SXUV100 features 100 mmÂ-² active area. Sensitive device is operational from 1–1,000 nm, with peak photon responsivity at 0.27 A/W (at 1 nm) and 0.33 A/W (at 850 nm). Other characteristics include 10 MΩ shunt resistance @ ±10 mV, 6 nF typ capacitance, and 250 nsec typ response time. Optimal applications...

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Quadrant Photodiode offers 5 mm² active area in each quadrant.
Photodiodes

Quadrant Photodiode offers 5 mm² active area in each quadrant.

Housed in TO-5 windowless package with 5-pin header, Model SXUVPS4C features light responsivity from 1–1,000 nm and shunt resistance of 100 MΩ, making it suitable for 2 axes-positional-centering applications for lasers in 13.5–200 nm wavelength range. Operating and storage temperatures range from -10 to 40°C ambient and from -20 to 80°C in nitrogen or vacuum conditions. Max...

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