Photodiodes

Thin-Film Filter Photodetectors are available in SXUV100TF135 and SXUV100TF135B versions. Units offer 100 mm² active areas and can detect between 12 nm and 18 nm. Products provide typical responsivity of 0.09 A/W at 13.5 nm and are suitable for laser power monitoring, semiconductor photolithography and metrology system applications. Photodetectors are operated in a temperature range of -20 °C...

Thin-Film Filter Photodetectors are available in SXUV100TF135 and SXUV100TF135B versions. Units offer 100 mm² active areas and can detect between 12 nm and 18 nm. Products provide typical responsivity of 0.09 A/W at 13.5 nm and are suitable for laser power monitoring, semiconductor photolithography and metrology system applications. Photodetectors are operated in a temperature range of -20 °C...

UV-Enhanced Silicon Photodiodes are used for low-light-level detection.

UV-Enhanced Planar Diffused Silicon Photodiodes are available in UVD planar diffused and UVE planar diffused IR suppressed models. Units are offered in various sizes and footprints and in metal or ceramic packages. Products are suitable for medical instrumentation, pollution monitoring, spectroscopy, fluorescence, water purification and UV exposure meter applications. These devices can be...

UV-Enhanced Silicon Photodiodes are used for low-light-level detection.

UV-Enhanced Planar Diffused Silicon Photodiodes are available in UVD planar diffused and UVE planar diffused IR suppressed models. Units are offered in various sizes and footprints and in metal or ceramic packages. Products are suitable for medical instrumentation, pollution monitoring, spectroscopy, fluorescence, water purification and UV exposure meter applications. These devices can be...

Health & Beauty Industry

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Extended InGaAs 2 Micron Photodiodes with High Current Handling Find Multiple Applications for Characterizing Ultra-Fast Mode-Locked Fiber Lasers

October 23rd 2017 – Ewing, NJ – Discovery Semiconductors high speed, extended InGaAs 2 micron photodiodes are increasingly being used for characterizing ultra-fast, mode-locked fiber laser at multiple wavelengths ranging from 1550 nm to 2100 nm. According to Dr. Grzegorz Sobon, at Wroclaw University of Science and Technology in Wroclaw, Poland, “We are using the DSC2-50S photodetectors for...

Extended InGaAs 2 Micron Photodiodes with High Current Handling Find Multiple Applications for Characterizing Ultra-Fast Mode-Locked Fiber Lasers

October 23rd 2017 – Ewing, NJ – Discovery Semiconductors high speed, extended InGaAs 2 micron photodiodes are increasingly being used for characterizing ultra-fast, mode-locked fiber laser at multiple wavelengths ranging from 1550 nm to 2100 nm. According to Dr. Grzegorz Sobon, at Wroclaw University of Science and Technology in Wroclaw, Poland, “We are using the DSC2-50S photodetectors for...

Mid IR LEDs for NDIR and Moisture Content

Electro Optical Components introduces optoelectronic devices for the mid-infrared spectral range. Products include a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) covering the spectral range from 1600 to 5000 nm. Applications they are ideally suited for are: NDIR gas detection Film moisture content monitoring Low power consumption for portable...

Mid IR LEDs for NDIR and Moisture Content

Electro Optical Components introduces optoelectronic devices for the mid-infrared spectral range. Products include a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) covering the spectral range from 1600 to 5000 nm. Applications they are ideally suited for are: NDIR gas detection Film moisture content monitoring Low power consumption for portable...

NXIR-5C Photodiode meets RoHS and REACH standards.

Offering a sensitivity of 0.62 A/W at 850 nm and 0.35 A/W at 1064 nm, NXIR-5C NIR Photodiode are housed in 4.7 mm x 4.9 mm ceramic carrier surface-mount device package with 5 mm^2 active area. Featuring 320 nm to 1100 nm spectral response, unit has 1nA dark current, 5 pF capacitance at 10 volts, and greater than 100 MΩ shunt resistance. Operated in -40°C to +125°C, photodiode is available on...

NXIR-5C Photodiode meets RoHS and REACH standards.

Offering a sensitivity of 0.62 A/W at 850 nm and 0.35 A/W at 1064 nm, NXIR-5C NIR Photodiode are housed in 4.7 mm x 4.9 mm ceramic carrier surface-mount device package with 5 mm^2 active area. Featuring 320 nm to 1100 nm spectral response, unit has 1nA dark current, 5 pF capacitance at 10 volts, and greater than 100 MΩ shunt resistance. Operated in -40°C to +125°C, photodiode is available on...

Precision Machined Parts for High Tech Applications

For precision and value that sets the standard for quality and craftsmanship, EGS Production Machining is the source for precision and value. Our extensive capabilities and dedication to customer service allow us to deliver the optimal manufacturing solution. See our video to learn more.