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Thin-Film Filter Photodetectors are available in SXUV100TF135 and SXUV100TF135B versions. Units offer 100 mmÂ˛ active areas and can detect between 12 nm and 18 nm. Products provide typical responsivity of 0.09 A/W at 13.5 nm and are suitable for laser power monitoring, semiconductor photolithography and metrology system applications. Photodetectors are operated in a temperature range of -20... Read More
UV-Enhanced Planar Diffused Silicon Photodiodes are available in UVD planar diffused and UVE planar diffused IR suppressed models. Units are offered in various sizes and footprints and in metal or ceramic packages. Products are suitable for medical instrumentation, pollution monitoring, spectroscopy, fluorescence, water purification and UV exposure meter applications. These devices can be... Read More
Extended InGaAs 2 Micron Photodiodes with High Current Handling Find Multiple Applications for Characterizing Ultra-Fast Mode-Locked Fiber LasersOct 24, 2017
October 23rd 2017 â€“ Ewing, NJ â€“ Discovery Semiconductors high speed, extended InGaAs 2 micron photodiodes are increasingly being used for characterizing ultra-fast, mode-locked fiber laser at multiple wavelengths ranging from 1550 nm to 2100 nm.
According to Dr. Grzegorz Sobon, at Wroclaw University of Science and Technology in Wroclaw, Poland, â€śWe are using the DSC2-50S... Read More
Electro Optical Components introduces optoelectronic devices for the mid-infrared spectral range. Products include a wide range of Light Emitting Diodes (LEDs), LED arrays and spectral matched Photodiodes (PD) covering the spectral range from 1600 to 5000 nm. Applications they are ideally suited for are:
- NDIR gas detection
- Film moisture content monitoring
- Low... Read More
Offering a sensitivity of 0.62 A/W at 850 nm and 0.35 A/W at 1064 nm, NXIR-5C NIR Photodiode are housed in 4.7 mm x 4.9 mm ceramic carrier surface-mount device package with 5 mm^2 active area. Featuring 320 nm to 1100 nm spectral response, unit has 1nA dark current, 5 pF capacitance at 10 volts, and greater than 100 MÎ© shunt resistance. Operated in -40Â°C to +125Â°C, photodiode is available... Read More
Available in 5 mm x 4mm top view SMT package with 0.9 mm profiles, VEMD5080X01 PIN Photodiode is used in for signal detection in wearable device, medical, industrial and automotive applications. Operating in -40Â°C to +110Â°C temperature range with Â± 65Â° angle of half-sensitivity, unit provides 7.5 mmÂ˛ radiant-sensitive area with 45 ÂµA and 0.2 nA of reverse light and dark current... Read More
Suitable for light level detection and signal transmission applications, LAPD 3050 Avalanche Photodiode features low dark current and low back reflection. Having spectral response from 1000nm to 1650nm at 25Â°C with of 1550nm operational wavelength, unit offers 50V to 70V breakdown voltage. Available in hermetically sealed 3-pin coaxial package coupled to single-mode fiber pigtail, LAPD 3050... Read More
Used in laser-monitoring, rain and sun-sensor applications, NXIR-RF100CÂ SMD Photodiodes come in 3mm x 3.5mm rugged package with 1mm2 active area. Operated in -40Â°C to +125Â°C temperature range, product features anti-reflective coated window for providing >98% transmission. Delivering 0.62 A/W at 850nm and 0.35 A/W at 1064nm responsivity, product offers 3pF capacitance at 0V, shunt resistance... Read More
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Targeting applications at 1.2â€“2.2 micron wavelengths, 50 mA and higher current handling, extended InGaAs photodiodes can help realize full potential of high-power fiber laser and frequency comb technology at 1,550Â as well as 2,050 nm. Available formats include K or SMA coax fiber optic module,Â SMT fiber optic module, andÂ benchtop O/E instrument Lab Buddy, and multimode fiber options are... Read More
Without any processing or tone mapping, New Imaging Technologies (NIT) wide-dynamic-range (WDR), indium gallium arsenide (InGaAs) SWIR sensors and camera systems deliver dynamic range >140 dB inÂ one snapshot. InGaAs photodiode array features ROIC andÂ comes in 640 x 512 (15 micron pitch) or 320 x 256 (25 micron pitch) pixel resolution; both operate in from 900â€“1,700 nm. Under all lighting... Read More
Supplied in 3 low-profile, SMT package variants, AEC-Q101-qualified VEMDxx60X01 series features sensitive areas of 0.23 mmÂ˛, 0.85 mmÂ˛, and 7.5 mmÂ˛.Â Linearity deviation of reverse light current is <1%, and reverse light current is available to 38 ÂµA. For the detection of visible and NIR radiation, VEMD1060X01/5060X01/6060X01 are clear devices with a sensitivity range of 380â€“1,070 nm. For... Read More
Featuring spectral sensitivity of 400â€“1,100 nm, Silicon Detectors are suited for applications requiring high speed, consistency, and reliability, such as optical communications, medical diagnostics, barcode readers, and missile guidance. Die can be placed in variety of packages, from metal can TO-5, TO-8, and TO-18, to surface mount COB, flex circuits, and standard 3 mm and 5 mm plastic... Read More
Featuring active area of 0.36 mmÂ˛ and 0.70 mmÂ˛, respectively, NXIR-RF36 and NXIR-RF70 Detectors are suited for integration with semiconductor lasers, including Fabry-Perot, distributed feedback, and vertical-cavity surface-emitting lasers. Devices have responsivity of 0.65 A/WÂ at 850 nm, capacitance of 5 pF at 0 V, and shunt resistance greater than 200 MÎ©. Suitable for use with YAG lasers,... Read More
Featuring single-channel, back-illuminated design, BI-SMT Photodetector Series is suited for X-ray inspection, computed tomography, and general industrial tasks. Model 33BI-SMT features active area of 5.76 mmÂ˛Â and dimensionsÂ of 2.4 x 2.4 mm, whileÂ Model 55BI-SMT has 19.36 mmÂ˛ active areaÂ and 4.4 x 4.4 mm dimensions. With 9.4 x 9.4 mm dimensions, Model 1010BI-SMT features larger 88.36 mmÂ˛... Read More
With responsivity under test conditions at 254 nm, Model UVG12 features minimum A/W of 0.105, typical response of 0.115, and max response of 0.125. Photodiode is designed for detection from 193â€“400 nm and operates at 100% internal quantum efficiency in UV and visible regions. Extremely stable, 13 mmÂ˛ device exhibits less than 2% drop in responsivity after exposure to megajoules/cmÂ˛ of 254 nm... Read More
Suited for applications withÂ 400â€“1,100 nm wavelength, Silicon Avalanche photodiodes (Si APDs) are optical detectors that come in hermetic TO Cans and feature internal gain mechanism, rise times as low as 300 psec, and high sensitivity in NIR region. Optical sensitivity peak is optimized for 800 or 905 nm, and standard versions are available with 200, 500,Â and 800 Âµm active diameter.... Read More
Using InGaAs or Si photodiodes followed by variable gain transimpedance amplifier, Model OE-300 covers 320â€“1,700 nm wavelength range. Unit has switchable gain from 102 to 108 V/A giving precise measurements within wide dynamic range from nanowatts up to 10 mW optical power. Using free space input option, OE-300 works with standard optical accessories like tubes and lenses. FC and SMA optical... Read More
Excelitas Technologies® Exhibits Expanded Portfolio of Innovative Technology Solutions at Photonics West 2015Feb 16, 2015
SAN FRANCISCO, CA â€“ Excelitas Technologies Corp., a global technology leader focused on delivering innovative, customized photonics solutions today announced today it is exhibiting a broad array of its products at the SPIE Photonics West 2015 conference, which takesÂ place February 10-12 at The Moscone Center in San Francisco, California.Â The event marks the first time both Excelitas and... Read More
New detector products join Marktechâ€™s wide range of emitter sensors ranging from deep UV 280nm to 1720nm short wave infrared and InGaAs/InP epitaxial wafers from 1.0um to 2.6um. Latham, NYÂ â€“ Marktech Optoelectronics is set to introduce its new line of photodetectors at the SPIE Photonics West Conference to be held in San Franciscoâ€™s Moscone Center February 7-12, 2015. Marktechâ€™s new... Read More
Housed in windowless ceramic package with 22.05 x 15.85 mm rectangular active area, Model SXUV300C detects energy from extreme ultraviolet wavelengths of 1â€“1,000 nm. Device offers sizeable surface for reflective scatter measurements of high-powered UV lasers, and provides stable responsivity even after prolonged exposure to high-powered UV radiation. Read More