New N-Channel MOSFET with Maximum Power Dissipation of 0.5W
Measures 2.0mm x 2.1mm and has a continuous drain current of 1.4A. Drain-source on-state resistance is very low 0.110 ohms and total gate charge is 2.7nC. Applications include DC/DC converters, boost converters and load switches.
Read More »New N-Channel MOSFET with Maximum Power Dissipation of 0.5W
Measures 2.0mm x 2.1mm and has a continuous drain current of 1.4A. Drain-source on-state resistance is very low 0.110 ohms and total gate charge is 2.7nC. Applications include DC/DC converters, boost converters and load switches.
Read More »New Phototransistor with Reception Angle of 6 and 16 Degree
Operating temperature range from -65 to +125°C. Capped with focusing lens that results in narrow reception angles. Ideal for harsh environments conditions like high temperature, high humidity or corrosive atmosphere.
Read More »New Phototransistor with Reception Angle of 6 and 16 Degree
Operating temperature range from -65 to +125°C. Capped with focusing lens that results in narrow reception angles. Ideal for harsh environments conditions like high temperature, high humidity or corrosive atmosphere.
Read More »Nylon Washers for Your Automotive Applications
This ebook provides an overview of nylon washers in the automotive industry.
Read More »New SiC MOSFET with Power Dissipation of 165W
Operating temperature is rated for 175°C. Continuous drain current rating of 39A. Ideal for inverters, DC/DC converters, motor drives and switch mode power supplies.
Read More »New SiC MOSFET with Power Dissipation of 165W
Operating temperature is rated for 175°C. Continuous drain current rating of 39A. Ideal for inverters, DC/DC converters, motor drives and switch mode power supplies.
Read More »Latest P-Channel MOSFET is RoHS-Compliant and UIS Tested
Offers on-resistance down to 17.3 mΩ maximum / 14.3 mΩ typical at 10 V. Provides ruggedness and reliability with high temperature operation to +175 °C. Ideal for automotive applications such as reverse polarity protection, battery management, high side load switching, and LED lighting.
Read More »Latest P-Channel MOSFET is RoHS-Compliant and UIS Tested
Offers on-resistance down to 17.3 mΩ maximum / 14.3 mΩ typical at 10 V. Provides ruggedness and reliability with high temperature operation to +175 °C. Ideal for automotive applications such as reverse polarity protection, battery management, high side load switching, and LED lighting.
Read More »New 650 V SiC MOSFETs Feature High Frequency Operation
Features robust body diode with low reverse recovery charge. Available in both through-hole and surface mount packages. Ideal for server power supplies, EV charging systems and solar (PV) inverters.
Read More »New 650 V SiC MOSFETs Feature High Frequency Operation
Features robust body diode with low reverse recovery charge. Available in both through-hole and surface mount packages. Ideal for server power supplies, EV charging systems and solar (PV) inverters.
Read More »Simple Connection – MGB with EtherNet/IP
The new MGB with EtherNet/IP is a leap forward in access door safety. Designed for easy installation, flawless performance, and long service life, it is engineered with robust features and cutting-edge technology that places it firmly at the leading edge of the door safety device industry. To learn all about the benefits of the Euchner MGB, see our video.
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