Electronic Components & Devices

Vishay Intertechnology's SQJQ480E Automotive Grade Power MOSFET Honored in Electronic Products China Magazine's 2017 Top-10 Power Product Awards

Oct 11, 2017

MALVERN, Pa. - Oct. 10, 2017 - Vishay Intertechnology, Inc. (NYSE: VSH) today announced that its Vishay Siliconix SQJQ480E 80 V Automotive Grade TrenchFET® n-channel power MOSFET has been named by Electronic Products China magazine and 21IC as a winner in the 15th Annual Top-10 Power Product Awards. The AEC-Q101 qualified device was honored with the Green Energy Award in recognition of its... Read More

Electronic Components & Devices

RF Power LDMOS Transistors come with NXP product longevity program.

Sep 15, 2017

Suitable for VHF TV broadcast, sub-GHz aerospace, mobile radio and high-VSWR ISM applications, MRFX1K80H RF Power LDMOS Transistors are operated in 30 V to 65 V with 1.8 to 400 MHz frequency range. Units deliver 1800 W CW at 65 V and can handle VSWR of up to 65:1. Transistors feature ESD protection, unmatched input and output design. Offered in air cavity ceramic package, units can be used... Read More

Electronic Components & Devices

C3M0075120J SiC MOSFET offers an output capacitance of 51 nC.

Aug 30, 2017

C3M0075120J silicon carbide power MOSFETs are available in seven-lead TO-263-7 surface mount package. Units come with 7 mm creepage distance between drain and source with drain source voltage (Vds max) of 1200 V. Featuring reverse recovery charge and reverse recovery time of 220 nC and 18 ns respectively, units provide a maximum junction temperature of 150°C. These MOSFETs can be used in EV... Read More

Electronic Components & Devices

20V MOSFETs are housed in SOT-23F packages.

Jul 28, 2017

20V MOSFETs are available in SSM3K344R, SSM3K345R, SSM3J355R and SSM3J358R models. Unit is suitable for PCs, laptops and tablets applications and helps to consume low power. Product uses low voltage trench structure process and offers power dissipation rate of 1.0 W. Providing FET switch functionality for power rails up to 40V, MOSFET’s process reduces gate switch charges and on-state... Read More

Electronic Components & Devices

SiC Power MOSFETs are housed in TO-263-7L surface mount package.

Jul 01, 2017

Available in C3M0065100J (65 mΩ) and C3M0120100J (120 mΩ) configurations with output capacitance of 60 pF and 40 pF respectively, Silicon Carbide Power MOSFETs are suitable for renewable energy, EV battery charging, HV DC/DC converters, and switch mode power supplies applications. Featuring C3M™ technology and N-channel enhancement mode, units offer reverse recovery time of 14 ns... Read More

Electronic Components & Devices

RF Power GaN Transistor is housed in NI-360H-2SB ceramic flanged package.

Jun 17, 2017

Operating from 1 MHz to 2700 MHz frequency with +50 Vdc voltage, AFG24S100HR5 RF Power GaN Transistor is suitable for CW, pulse and wideband RF applications such as public mobile radios, ISM and wireless cellular infrastructure. Delivering gain of 16.0 dB CW, 18.0 dB pulse with 64.2% CW, 66.8% pulse efficiency in 2500 MHz narrowband test circuit, unit offers thermal resistance of 0.86ºC/W and... Read More

Electronic Components & Devices

Gate Drivers and NexFET™ Power Blocks deliver 700 W of power.

May 25, 2017

Requiring 511 mm² board space, DRV832x brushless DC gate drivers and NexFET™ Power Blocks are capable of driving peak current of 160 A. Enabling shorter trace length, units come with 18-volt BLDC motor design. Featuring smart gate-drive architecture, gate drivers adjust field-effect transistor switching to optimize power loss. Available in CSD88584Q5DC and CSD88599Q5DC models, power blocks... Read More

Electronic Components & Devices

N-Channel Power MOSFETs provide low switching noise.

May 13, 2017

Suitable for power supplies, motor drives, DC-DC and AC-DC converters applications, 40V/45V N-Channel Power MOSFETs with optimized cell structures suppresses spike voltage and ringing during switching. Unit uses U-MOS IX-H low-voltage trench structure for improved switching. Featuring low on-resistance and output charge, MOSFETs support 4.5V logic level drive.

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Electronic Components & Devices

C3M0075120K SiC Power MOSFET provides 58 pF output capacitance.

Apr 25, 2017

Housed in four-lead TO-247-4 package with separate driver source pin, C3M0075120K C3M™ SiC Power MOSFET features 8 mm creepage distance between drain and source. Offering continuous drain current of 30.8 A and 1200 V drain source voltage, unit comes with 220 nC reverse-recovery charge and 18 ns reverse-recovery time. MOSFET provides 75 mΩ and 51 nC of Rds (on) total gate charge (Qg)... Read More

Electronic Components & Devices

Airfast™ RF LDMOS Transistor is designed for two-way radio applications.

Apr 14, 2017

Suitable for large-signal and common-source amplifier applications, AFM906NT1 Airfast™ RF LDMOS Transistor is operated in 136 to 941 MHz frequency with 7.5 V of supply voltage. Featuring 20.3 dB power gain at 520 MHz, unit offers +37.8 dBm of P1dB and 6.8 W output power. Product offers 70.8 % efficiency.

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Electronic Components & Devices

TrenchFET® SiA468D Power MOSFETs are halogen-free and RoHS-compliant.

Apr 12, 2017

Housed in 2mm x 2mm PowerPAK® SC-70 package, TrenchFET® SiA468D Power MOSFETs feature on-resistance of 8.4 mΩ at 10 V and 11.4 mΩ at 4.5 V. Units are used for DC/DC conversion and load switching in notebook computers, tablets, VR headsets, and DC-DC bricks. With 37.8 A of continuous drain current, MOSFETs are 100 % RG-tested.

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Electronic Components & Devices

+FET™ Line MOSFET reduces switching noise.

Apr 01, 2017

Available with 13 different RDS(ON) ratings ranging from 1000 mOhms to 32 mOhms, +FET™ Line MOSFETs are housed in traditional thru-hole (TO-220/TO-220FP), surface-mount (DPAK/D2PAK) and advanced (5x6/8x8) device packages. Unit’s smooth switching behavior drives faster design cycles which reduces need of snubber circuits.

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Electronic Components & Devices

Richardson RFPD Introduces Lineup of Power IGBTs in New VINco E3 Package from Vincotech

Mar 31, 2017

Low-profile package for motion control, solar and UPS applications

March 28, 2017 – Geneva, Ill.: Richardson RFPD, Inc. announced today the availability from stock and full design support capabilities for a family of power IGBTs in the new VINco E3 package from Vincotech.

The VINco E3 package features SLC (SoLid Cover) technology in an industry-standard lowprofile package. It... Read More

Communication Systems & Equipment, Electrical Equipment & Systems, Electronic Components & Devices

Richardson RFPD at APEC 2017

Mar 10, 2017

March 7, 2017 – Geneva, Ill.: Richardson RFPD, Inc. today announces its attendance and participation at the 2017 Applied Power Electronics Conference and Exposition (APEC). The Premier Event in Applied Power Electronics™, APEC focuses on the practical and applied aspects of the power electronics business, and it draws attendance from all facets of the industry, including manufacturers,... Read More

Electronic Components & Devices

pseudomorphic High Electron Mobility Transistor used in 24GHz sensors.

Feb 09, 2017

Used in Ku and Ka Band Satellite Receiver applications, pHEMTs offer reduced noise and higher gain. Available in CE3512K2, CE3514M4, CE3520K3 and CE3521M4 microwave components, pHEMTs are suitable for applications in Low Noise Block in DBS and downconverters in VSAT systems.

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Electronic Components & Devices

SiHP065N60E V E Series MOSFET can withstand overvoltage transients.

Jan 30, 2017

Housed in TO-220AB package, SiHP065N60E V E Series MOSFET features 0.065 Ω at 10 V maximum on-resistance and 49 nC gate charge down. Delivering 93 pF and 593 pF of Co(er) and Co(tr) low output capacitance respectively, unit reduces conduction and switching losses in power factor correction and hard switched DC/DC converters.

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Electronic Components & Devices

GaN RF Transistor are CW and pulse capable.

Jan 16, 2017

Available in QPD1009 and QPD1010 models, GaN SiC RF transistors housed in 3 mm x 3 mm plastic QFN package. Having 17 W at 2 GHz output power level, QPD1009 provides linear gain of 24 dB at 2 GHz. QPD1010 is 10 W, 50 V device featuring 11 W of output power level and 24.7 dB linear gain at 2 GHz. Suitable for defense and commercial radar, QPD1009 and QPD1010 features 72% and 70% at 2 Hz PAE.

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Electronic Components & Devices

Transphorm's Fully-Packaged GaN FETs Available Now through Digi-Key's Global Websites

Dec 16, 2016

THIEF RIVER FALLS, Minn., Dec. 15, 2016 - Transphorm's gallium nitride (GaN) FETs in standard TO-xxx through hole and PQFN88 surface mount packaging are available for immediate shipment from Digi-Key Electronics, a global electronic components distributor, as part of a new global distribution agreement.

Transphorm is a global semiconductor company that develops the industry's... Read More

Electronic Components & Devices

C3M0065100K MOSFETS provide notch between drain and source pins.

Dec 02, 2016

With minimal gate circuit ringing due to Kelvin gate connection, C3M0065100K Power MOSFET includes maximum junction temperature as 150 °C. Optimized for electric-vehicle charging systems and three-phase industrial power supplies, device offers output capacitance of 60 pF, output capacitance and reverse-recover time of 24 ns. As Ideal blend for conduction losses, unit features current rates at... Read More

Electronic Components & Devices

N-channel MOSFETs for electric power switching applications.

Dec 01, 2016

Used as load switches in smartphones and tablets, N-channel MOSFETs: 30V SSM6K513NU and 40V SSM6K514NU uses trench process for efficiency. Unit reduces output charge and on-resistance to 6.5mOhm and 8.9mOhm respectively and reduces heat dissipation by 40%. Unit meets USB Type-C and USB Power Delivery standards. Unit is compact and consumes low power.

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