Electronic Amplifiers

Instrumentation Amplifier targets DAQ applications.
Electronic Amplifiers

Instrumentation Amplifier targets DAQ applications.

Compatible with all 12, 16, or 24-bit A/D devices, USB-controlled, single-channel Model USBPGF-S1(TM) consists of programmable signal conditioning instrumentation amplifier and low pass filter. Users can mix and match filter characteristics and independently select and program AC or DC coupling, corner frequency, and gain steps up to x1000 in single-ended or differential measurements. Each can be...

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Laser Amplifier System features dual outputs.
Electronic Amplifiers

Laser Amplifier System features dual outputs.

Featuring optimized dual outputs for simultaneous high-energy and time-resolved experiments, Spectra-Physics-® Unison(TM) amplifier system delivers femtosecond pulses at both terawatt-class intensities at 10 Hz frequency and mJ energies in kHz frequency regime. System also features pulse energy stability and TEM00 spatial mode for high quality experimental results.

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Electronic Amplifiers

Toshiba Expands C-Band GaAs FETs Lineup with Three Power Amplifiers Optimized For Power Added Efficiency

High Power Added Efficiency Lineup Includes GaAs Amplifiers with Higher Gain for Microwave Radios and SSPAs IRVINE, Calif., June 9 /-- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with three new devices optimized for power efficiency. The Power Added Efficiency...

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Electronic Amplifiers

Toshiba Expands GaN HEMT Product Family with Power Amplifiers for C & Ku-Band SATCOM and X-Band Industrial Applications

High Power, High Gain Devices Include Toshiba's First Production C-Band GaN Amplifier for SATCOM, an Extended Ku-Band Amplifier and an X-Band Amplifier for Industrial Applications IRVINE, Calif., June 9 / / - Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the addition of three new gallium nitride (GaN) semiconductor High Electron Mobility...

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Electronic Amplifiers

Tapered Amplifier targets atomic and precision spectroscopy.

New Focus(TM) TA-7600 series amplifier features tapered structure that maintains minimized power densities even after amplification. Capable of delivering over 1 W output power, unit offers fiber-coupled input which allows for simplified alignment. Constant power mode, monitor for input power, and front- and back-end isolation features are also included. Unit is compatible with New Focus...

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Electronic Amplifiers

Linear Power Amplifier targets WiFi and WiMAX applications.

Manufactured using InGaP HBT process technology, 2 GHz Model RF5602 features 32-34 dB small signal gain, integrated input power detector, and 3.3-5 V operation. Error vector magnitude performance is 2% at 26 dBm output power, 2% at 25 dBm, and 3% at 23.5 dBm. Optimized for use as final RF amplifier in 802.16 e/d and 802.11 b/g/n applications, device is also suited for 2.4 GHz ISM band...

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Electronic Amplifiers

High Frequency Amplifiers come in 3 x 3 mm QFN package.

Based upon GaAs pseudomorphic high electron mobility transistor technology, Models SUF-1033, -5033, and -8533 offer multiple high-frequency gain blocks featuring various gain levels across bandwidth. Each packaged broadband amplifier also features single supply voltage, low gain variation vs. temperature, and 50 W I/O match. With frequency ranges of DC-18 GHz, 0.1-4 GHz, and DC-12 GHz, units are...

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