Audio Op Amp delivers low noise and distortion.
Housed in SO-8 package, Model OPA1612 achieves 1.1 nV √Hz noise density with ultra-low distortion of 0.000015% at 1 kHz. Rail-to-rail output swing to within 600 mV with 2 W load maximizes dynamic range. Featuring wide supply range of -
Read More »Class-D Amplifier IC addresses TV/Hi-Fi audio performance.
As 50 W + 50 W stereo class-D amplifier IC, TDA7492 uses sixth-generation BCD6S (Bipolar/CMOS/DMOS) process that allows analog, logic, and high-voltage functions on one chip. BCD6S process promotes efficiency while simultaneously reducing crosstalk and also enables complementary NMOS and PMOS transistors in high-power output circuitry. Along with THD+N below 0.01%, features include built-in...
Read More »Audio Amplifier reduces consumer audio system complexity.
Supplied in 28-pin TSSOP, TPA3110D2 is 15 W stereo, true filter-free, analog-input, Class-D audio amplifier with integrated EMI suppression technology that eliminates need for inductor-based output filters. SpeakerGuard(TM) protection circuitry prevents speakers from being overdriven or damaged by DC currents, while THD+N performance of less than 0.1% over full power range at 1 kHz and...
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Audio Amplifiers combine high efficiency/RF immunity.
Model ISL99201 is mono Class D amplifier that delivers up to 2.5 W into 4 W load and operates with 86% efficiency at 400 mW into 8 W, with signal-to-noise ratio better than 95 dB. Featuring operating voltage of 2.4-5.5 V, ISL99202 stereo cap-free headphone amplifier supports 16-600 W speaker impedance and prevents bursts at 217 Hz from interfering with audio output. Both offer click-and-pop...
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Read More »JFET-Input Op Amp achieves low offset and drift.
Created with dielectrically-isolated iPolar-® 36-V precision process technology, 19 MHz ADA4627 specifies 5 pA max bias current at 25-
Read More »RF Power Transistors target TD-SCDMA wireless networks.
Providing 50 W peak RF output power, MRF7P20040H LDMOS FET features drain efficiency of 43% and 18 dB gain at 10 W average output. Multi-stage power amplifier IC, Model MD7IC2050N, provides 70 W peak RF output power, drain efficiency of 35%, and 29 dB gain at 10 W output. Designer can select discrete, 3-stage PA configuration with MRF7P20040H as final amplifier, or MD7IC2050N IC in 2-stage PA...
Read More »Transmit Module offers CMOS design for cellular handsets.
Dual-band AM7802 GSM/GPRS transmit module integrates power amplifier, controller, transmit/receive switch, and filtering into 30 mm2 package. Unit is capable of 1.5 kV ESD on all pins, including RF pins, and can withstand 8 kV ESD on antenna port. Capable of operation down to 2.7 V, it maximizes handset operating time and will be able to be used with next-generation, low-voltage batteries.
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Op Amp offers low offset voltage of 75 µV max.
Built using bipolar process technology, dual 40 V Model ISL28207 features typical input bias current of 60 pA. Temperature drift is 0.65 -µV/-
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Operational Amplifier offers ultra-low noise performance.
Created on bipolar process technology, 40 V Model ISL28127 offers low-frequency voltage noise performance of 3.0 nV/√Hz at 10 Hz, offset voltage of 70 mV, and 10 nA max input bias current. Device also features offset voltage drift performance of 0.5 mV/-
Read More »Broadband Amplifier features modular design.
BBA100 has modular design that allows users to select frequency range and output power to suit their requirements, and built-in expansion capability allows amplifier modules to be replaced easily. Device features 3 frequency bands, each with configurable interlock circuit, that cover range from 9 kHz to 1 GHz and provide power up to 500 W. Integrated system controller controls frequency bands,...
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