Electronic Amplifiers

Electronic Amplifiers

RFMD® to Showcase Portfolio of Industry-Leading Wired Broadband Components at SCTE Cable-Tec Expo 2010

Company Also Announces Availability of 2010 Wired Broadband Product Selection Guide GREENSBORO, N.C. - RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies, announced today the Company will showcase its portfolio of industry-leading wired broadband components at the SCTE Cable-Tec...

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Electronic Amplifiers

Hybrid Power Doubler Amplifier enhances CATV infrastructure.

Supplying min gain of 21 dB over 45-1,003 MHz frequency range, GaN-based RFPD2650 is designed for CATV infrastructure applications with hybrid fiber coaxial (HFC) optical nodes. It delivers low distortion performance with flexibility to optimize for supply current or energy consumption. Specifically, amp can deliver up to 20% power/energy savings with no performance penalty in HFC networks or it...

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Electronic Amplifiers

Low Noise Amplifiers offer 3 programmable gain states.

Suited for high-data-rate wireless protocols such as HSPA and LTE, Models MAX2666/MAX2668 deliver 15 dB of gain with 1.0 dB noise figure and operation over I, IV, V, VI, VII, and X UMTS frequency bands. Units run off 2.7-3.3 V supply with 3.8 mA supply current and less than 100 -µA in lowest gain mode. Housed in 1.5 x 1.0 x 0.55 mm package, devices are specified over -40 to +85-

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SMT Power Amplifiers suit point-to-point radio market.
Electronic Amplifiers

SMT Power Amplifiers suit point-to-point radio market.

Supplied in QFN and SMD packages, XP10xx-Qx power amplifiers collectively cover 5.9-40.0 GHz frequency range. Gain control and temperature-compensated, on-chip detectors are standard. Linearity is expressed via third order intercept point (OIP3) values from 35.5-41 dB, and gain values range from 21-26 dB. With current ratings from 500-1,000 mA and voltage ratings from 4.0-7.0 V, products suit...

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Electronic Amplifiers

Analog Devices Variable Gain Amplifiers Provide Unprecedented Levels of Performance and Integration at RF and IF Frequencies

Highly integrated SiGe BiCMOS and GaAs RF/IF variable gain control amplifiers combine multiple functions in single chip, achieving significant BOM savings and breakthrough radio performance. NORWOOD, Mass. - Analog Devices, Inc. (NYSE: ADI), a global leader in high-performance semiconductors for signal-processing applications and RF integrated circuits, today introduced a series of highly...

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Electronic Amplifiers

Differential Amplifier drives DC to 100 MHz signals.

Built on SiGe BiCMOS process and specified to operate with 3 or 5 V single supply, Model LTC6409 is capable of driving DC to 100 MHz signals with 1.1 nV/√Hz noise and -88 dBc HD2/HD3 distortion. Device features 10 GHz gain-bandwidth product, 100 dB SFDR up to 40 MHz, and 1% settling time of 1.9 ns. Housed in 2 x 3 mm QFN package, amplifier has wide input common mode range of 0-3.5 V and output...

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Process Controllers are available with software interface.
Electronic Amplifiers

Process Controllers are available with software interface.

Used for monitoring press-fitting processes or implementing switch checks, respectively, MP85A FASTpress and MP85A-S EASYswitch utilize software interface for connection to IPM process data management software. Controllers can be seamlessly integrated into appropriate system via IPM interface so that acquired production data can be directly transmitted to quality assurance server for...

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Electronic Amplifiers

Samsung Selects High-Performing ANADIGICS Power Amplifier for Use in Intensity II(TM) and Gusto(TM) Mobile Phones

ANADIGICS' AWC6323 Device Meets Demand for Increased Integration in Dual-Band Handsets WARREN, NJ - September 22, 2010 - Continuing to demonstrate industry leadership in designing power amplifiers (PAs) for the world's most popular mobile devices, ANADIGICS, Inc. (Nasdaq: ANAD) today announced that its HELP3E(TM) Dual Band AWC6323 PA is being implemented in Samsung's Intensity II(TM) and...

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