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MAAM-011206 DC–15 GHz Darlington Amplifier delivers an output power +18 dBm with 13.5 dB typical gain. Having reverse isolation of greater than 21 dB, unit offers a noise figure and return loss of 4.5 dB and 15 dB at 6 GHz and 0.1–15 GHz respectively. Product is housed in 1.5 x 1.2 mm plastic SMT package and is suitable for test and measurement, land mobile radio, and wireless and... Read More
Tallysman’s LNAs are offered in four models with options of 35dB and 50dB gain. Units come with Dorne Margolin / EDO elements and offer consistent gain. Products feature filters for suppression of out-of-band interfering signals such as cellular LTE and Iridium® signals. LNAs are compatible with choke ring antennas and provide low noise figure, high third order intercept point and small... Read More
Ultrawideband 2 GHz to 22 GHz Distributed Low Noise Amplifier Now Offered in Plastic 4x4 QFN PackageJul 20, 2017
Chelmsford, MA - July 19, 2017 – Custom MMIC, a leading developer of performance driven monolithic microwave integrated circuits (MMICs), announces the CMD241P4, a packaged version of its popular CMD241 ultra-wideband GaAs MMIC distributed low noise amplifier. The wideband operation, low noise figure, low current consumption, excellent return loss, and compact size of this distributed... Read More
Available in 0.50 in. x 0.40 in. x 0.10 in. surface mount package, WMA7RC 7T Low Noise Amplifier delivers VSWR of 1.22:1. Offering 7T frequency of 298 MHz, noise figureof 0.40 dB and P1dB of +10.0 dBm, unit is operated by +10.0 V DC source. Product is suitable for nonmagnetic MRI, medical, RF measurement and current sensor applications.Read More
Nuwaves Engineering Announces the Completion of a 20 Watt C-Band Radio Frequency Bidirectional Amplifier Module for Communications, Telemetry and Electronic Warfare MarketsJun 22, 2017
Middletown, Ohio, June 21st, 2017 - NuWaves Engineering, an international Radio Frequency (RF) and Microwave solutions provider, announces the completion of the IRaD phase for their miniaturized C-band bidirectional amplifier (BDA), to be added to their line of NuPower Xtender™ bidirectional amplifier products.
The NuPower Xtender™ C20RX01 BDA module, part number NW-BA-C-20-RX01,... Read More
Available in models ranging from 1.5 to 18 GHz frequency with -180 dBc/Hz offset residual phase noise at 10 KHz, Low Phase Noise Amplifiers are suitable for electronic warfare, VSAT and radar applications. Offering 9 to 14 dB of small signal gain with 5.5 dB noise figure, units are housed in gold-over-nickel-plated Kovar™ metal drop-in packages. Having Psat levels from +16 to +25 dBm range,... Read More
Featuring 1.2 cu in. form factor, HILNA™ CX Amplifier delivers over 35 dB of gain across 5 GHz to 10 GHz range. Covering C- to X-band frequencies, unit offers +21 dBm of OIP3. LNA are also available for other bandwidths, military screening, form factors, filtering and gain.Read More
Used in Local Oscillator and high sensitivity receiver circuits for military and instrumentation applications, GaAs MMIC Low Phase Noise Amplifier comes in three die and two QFN packaged MMICs in 6 to 22 and 30 to 40 GHz freqency range. Operated with power supply of 3 to 5 volts, amplifier family is self- biased. CMD245 and CMD245C4 are operated in 6 to 18 GHz frequency and CMD246 C4 is... Read More
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Ultra - Low Noise Amplifiers, Driver Amplifiers, and Low Loss Phase Shifters on Display by Custom MMIC at IEEE International Symposium on Phased Array Systems and TechnologyOct 24, 2016
Chelmsford, MA – Custom MMIC, a leading developer of performance driven monolithic microwave integrated circuits (MMICs) is pleased to announce their attendance at the IEEE International Symposium on Phased Array Systems and Technology October 18 - 21st in Waltham, MA at Booth #7 with a focus on ultra-low noise amplifiers, driver amplifiers, and low loss phase shifters. With a large suite of... Read More
Wafer-by-wafer guaranteed to 75 krad (Si) withÂ low dose rate exposure of 10 mrad/sec,Â ISL70617SEH differential input, rail-to-rail output instrumentation amplifier (in-amp) serves communication satellite applications. Silicon on insulator process provides SEL and SEB robustness of 60 MeV in heavy ion environments, while <10 Âµsec SET performance eliminates need for extra filtering.... Read More
Operating from single 5 V supply and drawing just 90 mA typical, Model CMD243 offers 15.5 dB of gain with output P1dB compression point of +21 dBm. Balanced design provides good VSWR matching, along with optimized stability and gain flatness. Self-biasing GaAs MMIC amplifier is a 50 Ω matched design, which eliminates need for external DC blocks and RF port matching. Applications include... Read More
Suited for EW and communication systems with space constraints and low power consumption requirements, 9–18 GHz CMD223 has 50 Ω matched design that eliminates need for external DC blocks and RF port matching. Full passivation promotes reliability and provides moisture protection. At 13.5 GHz,Â this balanced low-noise amplifier (LNA)Â delivers >22 dB of gain with corresponding output 1 dB... Read More
Available inÂ 4.9 x 3.91 mm SOIC package, INA188 enables accurate DC and low-frequency measurements over full extended industrial temperature range. Zero-drift architecture, providing long-term temperature stability,Â enables offset voltage of 25 ÂµV andÂ offset-voltage drift of 80 nV/Â°C. Capable of operating at up to 36 V, amplifier generates 250 nV(PP) noise from 0.1–10 Hz without... Read More
Westford, MA –Â Custom MMIC, (www.CustomMMIC.com), a developer of performance-driven monolithic microwave integrated circuits (MMICs), will be debuting several new GaAs and GaN MMIC amplifiers, switches, and multipliers at the 2015 International Microwave Symposium (IMS) in Phoenix, Arizona, being held from May 19 through May 21. Their latest products... Read More
Housed in leadless 3 x 3 mm plastic surface-mount package, Model CMD189P3 delivers greater than 19 dB of gain with corresponding output 1 dB compression point of +4 dBm and noise figure of 1.4 dB. Broadband MMIC device has 50 Ω matched design, which eliminates need for external DC blocks and RF port matching. Applications include point-to-point and point-to-multipoint radios, military end-use,... Read More
Comtech Xicom Technology Receives First Annual Impact Award for New SuperPower(TM) SATCOM Uplink Amplifiers from SatNews PublishersApr 03, 2015
SANTA CLARA, CALIF.Â – Comtech Xicom Technology, Inc., the leader in high power amplifier products for satellite communications (SATCOM), received the first Annual Impact Award from SatNews Publishers during Satellite2015, for their introduction of a new line of SuperPower™Â traveling wave tube amplifiers (TWTAs) that can double available TWTA output and provide direct replacement for... Read More
Based on SuperPower technology, XTD-2000KHE Ku-band TWTA provides 750 W of linear power in compact, rugged package weighing 92 lb and drawing less than 3,200 W of prime power. XTD-1500DBSHE DBS-band TWTA provides 560 W of linear power for direct-to-home applications in same package and draws only 2,500 W of prime power. Designed for SATCOM applications, both are available as outdoor antenna-mount... Read More
Maxim showcases solutions for industrial power, industrial interface, and the signal chain. MUNICH - Maxim Integrated Products, Inc. (NASDAQ: MXIM) will demonstrate highly integrated analog solutions for embedded applications at the Embedded World 2015 Exhibition and Conference in Nuremberg, Germany (February 24-26, 2015). In three demo areas for Industrial Power, Industrial Interface, and Signal... Read More
With noise figure levels from 2.5–3 dB typ across entire band, ultra-broadband and millimeter wave low noise amplifiers (LNAs) include 17 unconditionally stable models covering multi-octave bandwidths with flat gain response and GaAs PHEMT semiconductor technology. Features include 50Â Ω hybrid MIC circuits enclosed in environmentally sealed metal packages with nickel or gold plating,... Read More
Supplied in die form, CMD163 features gain of +24 dB, noise figure of <1.3 dB, and output 1 dB compression point of +19 dBm across 17–27 GHz bandwidth. All-positive bias scheme eliminates need for negative voltages and sequencing circuitry, and bias conditions are Vdd = 4 V @ 120 mA and Vgg = 3.0 V. LNA is internally matched 50 Ω design that does not require any external components aside from... Read More