X-Band GaN HEMT is suited for radar and medical applications.

Press Release Summary:



Model TGI8596-50 is internally matched GaN HEMT power amplifier that operates in 8.5-9.6 GHz range with output power of 50 W. With supply voltage of 24 V at 25°C, gallium nitride (GaN) semiconductor high electron mobility transistor (HEMT) features typical 3 dB compression point of 47.5 dBm, linear gain of 9.0 dB, and drain current of 4.5 A.



Original Press Release:



Toshiba Announces X-Band GaN HEMT for Radar and Medical Applications



HONOLULU, Hawaii, June 5 / -- Toshiba America Electronic Components, Inc. (TAEC)* and its parent company, Toshiba Corp., today announced the companies' first commercially available gallium nitride (GaN) semiconductor high electron mobility transistor (HEMT) at the IEEE MTT-S International Microwave Symposium, which will be held June 5 through 7 in Honolulu, Hawaii. The GaN HEMT is an X-band device targeted for radar and medical applications.

The TGI8596-50 is an internally matched GaN HEMT power amplifier that operates in the 8.5GHz to 9.6GHz range with output power of 50W. The device features a three-dB compression point of 47.5dBm(1) (typ.), linear gain of 9.0dB(1) (typ.), and drain current of 4.5 Amps(1) (typ.). Targeted applications for this device include radar systems and medical applications, such as use in oncology.

"GaN HEMT amplifiers have the potential to achieve significantly higher gain and output power than GaAs FETs at comparable frequency and input power," said Homayoun Ghani, business development manager, Microwave, Logic and Small Signal Devices, in TAEC's Discrete Business Unit. As a follow-on to this initial device, Toshiba is also developing C- and Ku-band GaN HEMTs for satellite communications applications."

Last year, Toshiba announced prototypes and presented technical papers on a 6GHz, C-band, GaN power FET with output power of 174W and a 9.5GHz, X-band power FET with output power of 81.3W. Each of these devices achieved the highest output power reported at their respective frequencies as of the date of their announcements in June and November 2006, and show the potential increase in power output that can be achieved with GaN semiconductors.

Pricing and availability

Samples of the 50W, X-band TGI8596-50 GaN HEMT are available now. For pricing, please contact your Toshiba sales representative.

TAEC Microwave Devices Overview

Toshiba is a leading supplier of high-performance gallium arsenide microwave devices. The company's line-up of products consists of a series of components within the S, C, X and Ku frequency bands, which are used in a wide variety of wireless applications. These applications include personal communications systems (PCS), multi channel distribution systems (MMDS), Wireless LAN/WAN systems, point-to-point terrestrial microwave radio, wireless local loop (WLL), satellite communications systems (SATCOM) such as high power solid state power amplifiers (SSPA) and very small aperture terminals (VSAT), radar systems, mobile communications, and other communication systems. Toshiba is also developing higher gain, higher output power GaN devices for applications in satellite communications, terrestrial point-to-point communications, radar systems and medical uses.

*About TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's fourth largest semiconductor manufacturer (iSuppli, World's Top Semiconductor Supplier Rankings in 2006). For additional company and product information, please visit www.toshiba.com/taec/. For technical inquiries, please e-mail Tech.Questions@taec.toshiba.com.

Visit TAEC in IEEE MTT-S Booth #1107

(1) with a supply voltage of 24V at 25 degrees C

Source: Toshiba America Electronic Components, Inc.

Reader inquiries: Tech.Questions@taec.toshiba.com.

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