Wide Range of SiC Power Schottky Diodes from SemiSouth Includes Industry's Highest Current Part
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Commercially available 5-30A diodes in TO-220 and TO-247 packages; High performance, drop-in replacement
Starkville, Mississippi: SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) products for high-power, high-efficiency, harsh-environment power management and conversion applications, today announced a wide range of SiC power Schottky diodes including the 30A rated SDP30S120 - industry's highest current 1200V part to be commercially available in a TO-247 package.
The full 1200V, ROHS-compliant product range spans 5-30A with lower current (5 and 10A) diodes packaged as T0-220 parts while 10, 20 and the industry-leading 30A devices are offered in the TO-247 package. All diodes in the family are designed with an advanced integrated junction barrier technology to simultaneously enable low forward voltage with low leakage currents and high power density for compact power designs. Other features include negligible reverse recovery and high reliability.
While the lower current parts are drop-in, risk-free high performance alternatives for other manufacturers' parts, the SDP30S120 demonstrates SemiSouth's technology leadership in silicon carbide technology with its outstanding 30A current capability. Comments Dan Schwob, Vice President Sales and Marketing: "These parts can benefit many applications including solar energy where they can be used in the boost sector of solar inverters to dramatically improve efficiency. Other uses include SMPS, PFC devices, induction heating, UPS and motor drives." He concludes: "We expect to expand our silicon carbide diode Schottky power diode family to include 60A parts in the very near future. This will put us way out in front of our competition and be particularly exciting for manufacturers of 30kW solar inverter systems."
About SemiSouth Laboratories, Inc.
SemiSouth Laboratories, Inc., a privately owned corporation with its main offices and foundry in Starkville, Mississippi, (USA) produces silicon carbide (SiC) power devices and electronics, targeting applications such as: solar inverters; power conversion in computing and network power supplies; variable-speed drives for industrial motors and hybrid electric vehicles; and products used in high-power, harsh-environment military and aerospace environments. Founded in 2000, SemiSouth is a vertically integrated SiC manufacturer with the most advanced SiC epitaxial and vertical trench process technology in the world. The company utilizes a proprietary and patented self-aligned JFET chip design to enable up to 10 times smaller die size when compared to silicon super-junction MOSFETs or the latest trench IGBTs. The company also holds the record for the lowest 1200 V power transistor specific on-resistance - under 2.5mW/cm². SemiSouth introduced the world's first commercial, cost-effective normally-off SiC JFETs in 2008, which have enabled world-record energy efficiencies for its customer's products. The company sells its products globally through direct sales and distribution channels. More information is available at www.semisouth.com.
For further information:
Dan Schwob
SemiSouth Laboratories, Inc.
+1-408-332-3011
E-mail: dan.schwob@semisouth.com
