Press Release Summary:
Model RF5755 includes 2.5 GHz power amplifier, multi-throw switch, low-noise amplifier, power detector coupler, as well as matching circuitry with output harmonic attenuation in 3 x 3 x 0.5 mm package. Product offers 20 dBm linear output power; switching between WiFi transmit, WiFi receive, or Bluetooth; and simultaneous receive of WiFi and Bluetooth with positive gain in both paths. Power detector coupler decreases sensitivity to voltage supply, temperature, and VSWR.
Original Press Release:
RFMD® Unveils Complete Front End Module for Handheld WiFi and Bluetooth Systems
GREENSBORO, N.C. - RF Micro Devices, Inc. (Nasdaq:RFMD), a global leader in the design and manufacture of high-performance RF components and compound semiconductor technologies, today unveiled a highly integrated new front end module (FEM) that delivers a complete integrated solution for handset/handheld WiFi 802.11b/g/n and Bluetooth® systems.
RFMD's RF5755 FEM integrates a 2.5GHz Power Amplifier (PA), multi-throw switch (SP3T), Low Noise Amplifier (LNA) and power detector coupler. The RF5755 also features integrated matching circuitry with output harmonic attenuation, reducing the bill of materials (BOM) and manufacturing costs. The RF5755 is packaged in a small 16-pin QFN package (3mm x 3mm x 0.5mm), minimizing layout area in customer applications.
The highly integrated RF5755 delivers many features and customer benefits: high linear output power (20dBm) allowing higher efficiency and lower EVM for 11n applications; the ability to switch between WiFi transmit, WiFi receive, or Bluetooth (transmit or receive); reduced need for a high loss/attenuation filter at the FEM output; high IIP3 and gain; simultaneous receive of WiFi and Bluetooth with positive gain in both paths (utilizing the SPST switch after the LNA); and a direct-to-battery connection eliminating the need for additional DC circuitry. Additionally, the integrated power detector coupler decreases sensitivity to voltage supply, temperature, and VSWR and improves the accuracy of the closed loop power control.
The RF5755 FEM is fully tested, including EVM and all DC parameters, providing a reduced size, single-placement solution that minimizes system footprint, reduces costs, and accelerates time-to-market for high linear output power applications.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance radio frequency components and compound semiconductor technologies. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
SOURCE: RF Micro Devices