UltraCMOS® PE42823 RF Switch features built-in ESD protection.

Press Release Summary:

Operated in -40°C to +105°C temperatures in 700 MHz to 6 GHz frequency range, UltraCMOS® PE42823 RF SPDT Switch delivers single-event peak power handling of 51 dBm LTE. Having 4.5 kV HBM of ESD rating of on RF pins to ground, unit’s inputs come with 70 dBm (IIP3) and 105 dBm (IIP2) linearity. Housed in 16-lead, 3 x 3 x 0.75 mm QFN package, product feature 43 dB and 34 dB of isolation on receive path and transmit path respectively.


Original Press Release:

Peregrine Semiconductor Introduces High-Power Receiver Protection RF Switch

Ideal for High-Performance Wireless Infrastructure Applications, the UltraCMOS® PE42823 RF Switch Delivers Exceptional Single-event Peak Power Handling in a Small Form Factor

IMS 2017 -- In booth #1042, Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the UltraCMOS® PE42823, a high-power receiver protection RF switch. Ideal for wireless infrastructure applications, this reflective switch is optimized for emerging radio architectures such as massive multiple input, multiple output (MIMO). The PE42823 delivers excellent single-event peak power handling, low power consumption and high linearity. Offered in a compact form factor, this high-power switch features built-in ESD protection - a key benefit for systems that demand high reliability.

Receiver protection switches are used to protect the system when an antenna is disconnected, which can occur at installation, field failure or with unexpected power surges. The PE42823 switch is designed to reliably handle the reflected power and to protect the receiver system from damage. Unlike competing PIN-diode solutions, the PE42823 requires no external RF matching components, resulting in a smaller board size and lower bill of materials (BOM) costs. PIN-diode based high-power switches require different DC bias voltages, and these solutions need several discrete components and a specified driver IC to transfer control logic to these different DC bias voltages.

"Emerging wireless infrastructure systems require intelligent components that reliably deliver low power consumption in a compact form factor," says Robert Wagner, director of product marketing at Peregrine Semiconductor. "Peregrine's new PE42823 high-power switch offers a clear power handling and size advantage over competing PIN-diode solutions. Plus, design engineers can confidently trust the reliability and repeatability of Peregrine's UltraCMOS technology platform."

Features, Packaging, Price and Availability

Covering a wide frequency range from 700 MHz to 6 GHz, the PE42823 is a reflective single pole, double throw (SPDT) switch designed for use in high-power and high-performance wireless infrastructure applications. The RF protection switch delivers excellent single-event peak power handling of 51 dBm LTE, low power consumption of 120 microamps and exceptional linearity performance across the frequency range. The switch's input IP3 is 70 dBm, and the input IP2 is 105 dBm. At 2.7 GHz, the switch has high isolation of 43 dB on the receive path and 34 dB on the transmit path. The PE42823 features built-in ESD protection with an ESD rating of 4.5 kV HBM on RF pins to ground. In addition, it has an extended operating temperature of +105 degrees Celsius.

Offered in a compact 16-lead, 3 x 3 x 0.75 mm QFN package, volume-production parts and evaluation kits are now available. For 10K-quantity orders, each PE42823 switch is $5.43.

      Features                                      UltraCMOS® PE42823

  Frequency Range                              700 MHz to 6 GHz

  Single-event Peak Power Handling        51 dBm LTE

  Low Power Consumption                      120 μA

  High Linearity                               IIP3: 70 dBm, IIP2: 105 dBm

  High Isolation                               Rx: 43 dB @ 2.7 GHz
                                                     Tx: 34 dB @ 2.7 GHz

  Built-in ESD Protection                      4.5 kV HBM

  Temperature Range                     -40°C to +105°C

  Package                               16-lead 3 x 3 x 0.75 mm QFN

ABOUT PEREGRINE SEMICONDUCTOR

Peregrine Semiconductor Corporation, a Murata company, is the founder of RF silicon on insulator (SOI) and is a leading fabless provider of high-performance, integrated RF solutions. Since 1988 Peregrine and its founding team have been perfecting UltraCMOS® technology - a patented, advanced form of SOI - to deliver the performance edge needed to solve the RF market's biggest challenges, such as linearity. By delivering best-in-class performance and monolithic integration, Peregrine's product portfolio is the trusted choice for market leaders in automotive, broadband, industrial, Internet of Things, mobile devices, smartphones, space, test-and-measurement equipment and wireless infrastructure. A Murata company since December 2014, Peregrine holds more than 400 issued and pending patents and has shipped over 3.5 billion UltraCMOS units. For more information, visit http://www.psemi.com.

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