Trench IGBTs reduce power dissipation in inverters.

International Rectifier Jun 12, 2006

Press Release Summary:

Offering reduced power dissipation in inverters up to 2.5 kW in motor control applications, 600 V Insulated Gate Bipolar Transistors (IGBTs) are co-packaged with soft recovery diodes and have low collector-to-emitter saturation voltage. Other features include up to 175Ã‚Â°C max operating temperature, high peak turn-off, 5 Ã‚Âµs short-circuit rating, and 10 kV/Ã‚ÂµS induced turn-on immunity.

Original Press Release:

IR Trench IGBTs Reduce Power Dissipation up to 60% in Motion Control Applications

EL SEGUNDO, CA., April 2006 - International Rectifier, IRÂ® (NYSE: IRF), a world leader in power management technology, today introduced four 600V insulated gate bipolar transistors (IGBTs) that can reduce power dissipation in inverters by up to 60%, in motor control applications up to 2.5kW.

Co-packaged with ultrafast soft recovery diodes, these IGBTs have lower collector-to-emitter saturation voltage (VCE(ON)) and total switching energy(ETS) than punch-through (PT) and non-punch-through (NPT) type IGBTs. The combination of low VCE(ON) and ETS of trench IGBTs result in reduced power dissipation and higher power density in motion control applications with wide range of switching frequency conditions such as in air conditioner and refrigerator compressors, vacuum cleaners, washing machines, dishwashers, ventilation fans, industrial drives and circulating pumps.

The trench IGBTs, part of IR's iMOTION(TM) integrated design platform, increase current density and can deliver up to 60% higher rms current in the same package compared to previous devices on the market. The reduced power dissipation IGBT can result in a 50% heatsink size reduction.

Other performance benefits include wider square reverse bias safe operating area (RBSOA), up to 175Â°C maximum operating temperature, high peak turn-off capability, positive VCE(on) temperature coefficient and short-circuit rating of 5Âµs and high dV/dt (10kV/ÂµS) induced turn-on immunity. In addition, the internal ultrafast soft recovery diode improves efficiency and reduces EMI.

Data sheets and application notes are available on the International Rectifier Web site, www.irf.com

Part Number Package BVCES IC @ 25Â°C  IC @ 100Â°C  VCE(ON) @  ETS @ 175Â°C  TSC   POUT

             Type    (V)      (A)        (A)       175Â°C,   IC @ 100Â°C   (ÂµS)  range

                                                  Typical    Typical            (kW)

                                                   (V)         (ÂµJ)              

IRGB4056DPbF TO-220  600     24.0        12.0   1.97 @ 12A     540       5.0    1.5



IRGB4061DPbF TO-220  600     36.0        18.0   2.50 @ 18A     850       5.0    2.0



IRGB4062DPbF TO-220  600     48.0        24.0   2.04 @ 24A     1260      5.0    2.5



IRGP4062DPbF TO-247  600     48.0        24.0   2.04 @ 24A     1260      5.0    2.5

About International Rectifier
International Rectifier (NYSE:IRF) is a world leader in power management technology. IR's analog and mixed signal ICs, advanced circuit devices, integrated power systems and components enable high performance computing and reduce energy waste from motors, the world's single largest consumer of electricity. Leading manufacturers of computers, energy efficient appliances, lighting, automobiles, satellites, aircraft and defense systems rely on IR's power management benchmarks to power their next generation products. For more information, go to www.irf.com.

Trademark Notice
IRÂ® and iMOTION(TM) are trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.
For more information, contact
Chris Bull,
cbull1@irf.com,
310-726-8316