Toshiba to Showcase C-, X- and Ku-band GaAs FETs, X-Band GaN HEMT for Radar and Medical Applications, and RF Devices for Two-Way Radios and DTTV Tuners at MTT-S

Microwave, RF And Small Signal Devices Will Be On Display At IEEE MTT-S International Microwave Symposium, June 5-7 In Hawaii

HONOLULU, Hawaii, June 5 / - Toshiba America Electronic Components, Inc. (TAEC)* will feature an extensive array of C-, X- and Ku-band gallium arsenide (GaAs) field effect transistors (FETs) developed by Toshiba Corp. (Toshiba) as well as a broad line-up of radio frequency (RF) and small signal devices in TAEC's booth, #1107, at this year's IEEE MTT-S International Microwave Symposium, held June 5 through 7 in Honolulu, Hawaii. In addition, the company will showcase its first commercial gallium nitride (GaN) product, an X-band high electron mobility transistor (HEMT) targeted for radar and medical applications. (Please see separate product announcement.)

To represent its Ku-band products, Toshiba will feature the TIM1414-30L GaAs FET, which is engineered for satellite communications solid-state power amplifiers (SSPA). The device provides broadband RF performance to support 14.0 to 14.5GHz frequency applications and features high power of 45dBm, high gain of 5.5dB (typ.), and low intermodulation distortion (IM(3)) of -25dBc (min., S.C.L. @38dBm). The high-performance device is offered in a hermetically-sealed package. Other members of the family include the 9W TIM1414-9L and the 18W TIM1414-18L.

The company's family of C-band components provides state-of-the-art power and efficiency for satellite communication applications, with a broad selection of products ranging from 2W microwave monolithic integrated circuits (MMICs) to 80W GaAs FET devices.

Toshiba maintains industry leadership in high-output power C-band microwave devices with the 80W TIM5964-80SL and 60W TIM5964-60SL, which are optimized for use in SSPAs for SATCOM and very small aperture terminal (VSAT) satellite ground station applications. Both the 60 and 80W devices increase the maximum output power of the amplifiers within existing design platforms.

The latest GaN technology from Toshiba is also being shown at MTT-S. A new X-band internally matched GaN HEMT power amplifier, the TGI8596-50, operates in the 8.5GHz to 9.6GHz range with output power of approximately 50W, and is targeted for radar and medical applications.

RF MOSFET and RF Module for Two-Way Radios

Toshiba is demonstrating radio-frequency power MOSFETs designed for two-way radios using VHF (30MHz to 300MHz) and UHF (300MHz to 3GHz) frequencies. Notable features of these devices include high gain and high efficiency. Applications include 520MHz handheld professional radio applications, 470MHz general mobile radio service (GMRS) high-power walkie- talkies, ISM band and CB/amateur radio transmitters. The rich line-up includes eleven RF power MOSFETs.

A wide range of digital and analog RF power modules to meet the diverse needs of mobile communications systems, car phones and professional and amateur radios will also be shown. Applications include 50W and 60W FM portable business radios, marine radios, and digital two-way radios, including professional systems. TAEC offers seven high-efficiency, high-output power RF modules for VHS band and eleven RF modules for UHF band.

RF MMIC Lineup for Digital Terrestrial TV Tuners

Toshiba monolithic microwave ICs (MMICs) for digital terrestrial TV tuners feature low distortion, high gain and low power consumption, and support smaller, higher performance DTTV tuner circuits. Applications include IF-Amps for digital terrestrial television broadcast (DTTB), CATV, satellite broadcast, TV tuners on cellular phones (DVB-H, ISDB-T) and active RF Splitters for TV/PC/DVD recorders/VTR/STB.

Broad selections of 3.3V or 5V automatic gain control (AGC) or manual gain control (MGC) MMICs for IF-Amps and IF-GCA can be used in conjunction with Toshiba TA1396FG mixer oscillator PLL (downconverter) and TC9050 demodulator ICs.

Toshiba's Discrete Products

Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. (Source: "2006 Worldwide Semiconductor Market Share Report," Gartner, released April 2007). More specifically, Toshiba is a leading supplier in a number of discrete product categories, including power transistors, rectifiers and thyristors, L-MOS logic, CMOS logic, optoelectronics, small signal diodes and transistors. The company's discrete devices are designed to meet the growing demand for high-performance and lower voltages in today's wireless telecommunications and consumer electronics applications, while emphasizing its strength in the automotive and industrial markets.

*About TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributors and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's fourth largest semiconductor manufacturer (iSuppli, World's Top Semiconductor Supplier Rankings in 2006).

For additional company and product information, please visit For technical inquiries, please e-mail

Visit TAEC in IEEE MTT-S Booth #1107

Source: Toshiba America Electronic Components, Inc.

Poloi Lin of Toshiba America Electronic Components, Inc.

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