Press Release Summary:
Available in FX and HX models, Helios™ G4 DualBeam Series offers 7 nm TEM lamella preparation solution for semiconductor manufacturing and failure analysis applications. Flexible FX system delivers STEM resolution down to sub-three Ã…ngstrÃ¶ms and enables images to be obtained within minutes of completing lamella. HX model, geared specifically for high-throughput TEM lamella production, features automated QuickFlip holder that minimizes sample preparation times.
Original Press Release:
New Helios G4 Series DualBeam from FEI Sets New Standards
First 7nm TEM preparation solution available to failure analysis labs and the only DualBeam of its kind to achieve sub-three Ångström resolution.
Hillsboro, Ore. – FEI (NASDAQ: FEIC) today announced the new Helios™ G4 DualBeam series, which offers the highest throughput ultra-thin TEM lamella preparation for leading-edge semiconductor manufacturing and failure analysis applications. The new DualBeam series, which includes FX and HX models, takes a significant leap forward in both technological capability and ease-of-use.
The new Phoenix focused ion beam (FIB) makes finer cuts with higher precision and simplifies the creation of ultra-thin (sub 10nm) lamella for transmission electron microscopy (TEM) imaging. The FX is a flexible system that delivers dramatically improved STEM resolution – down to sub-three Ångströms – and significantly shortens the time to data for failure analysis. Images can now be obtained within minutes of completing the lamella, rather than the hours or days required previously to finalize the images on a stand-alone S/TEM system. The HX model is geared specifically for high-throughput TEM lamella production. It features an automated QuickFlip holder that reduces sample preparation times.
“FEI is the first to market with a TEM sample preparation solution capable of making 7nm thick lamella, addressing the needs of our customers who are developing next-generation devices,” states Rob Krueger, vice president and general manager of FEI’s semiconductor business. “In addition, by offering the ability to achieve sub-three Ångström image resolution in a DualBeam, failure analysis labs can now dramatically cut ‘time to data’ without compromising image quality. And, by combining high-resolution imaging and sample preparation on one system, we have reduced the amount of valuable lab real estate required.”
Failure Analysis is becoming increasingly important for chipmakers to ramp and manage yields at sub-20nm. As a result, the market for failure analysis equipment has experienced robust growth compared to the overall semiconductor equipment market. Over 30 equipment suppliers are active in the market. However, a recent report published by VLSI Research confirms that FEI continues to be the leading supplier: http://bit.ly/1NEM3Th.
Please visit FEI at ISTFA, taking place November 1-5, 2015, at the Oregon Convention Center in Portland, to learn more about the Helios G4 DualBeam. Or go to the FEI website: http://fei.com/helios-g4-fx-for-semiconductors/ or http://fei.com/helios-g4-hx-for-semiconductors/.
FEI Company (Nasdaq: FEIC) designs, manufactures and supports a broad range of high-performance microscopy workflow solutions that provide images and answers at the micro-, nano- and picometer scales. Its innovation and leadership enable customers in industry and science to increase productivity and make breakthrough discoveries. Headquartered in Hillsboro, Ore., USA, FEI has over 2,600 employees and sales and service operations in more than 50 countries around the world. More information can be found at: www.fei.com.
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