Press Release Summary:
Manufactured by chemical vapor deposition process, Silicon Carbide Sputtering Targets consist of homogenous, monolithic material with no particles. High density and lack of porosity results in negligible outgassing of target and makes it suitable for use in ultra-high vacuum conditions. Ranging in size from 3-20 in. diameter, targets are 99.9995% pure, enabling production of highly pure, uniform SiC films that ensure absence of etch residue from reactive ion etch processes.
Original Press Release:
CVD Materials Business of Morgan Advanced Ceramics Introduces Ultra-Pure Silicon Carbide Sputtering Targets
CVD SiC Targets Produce High-Purity SiC Films with Reduced Risk of Contamination
The CVD Materials business of Morgan Advanced Ceramics (MAC) introduces high-purity silicon carbide (SiC) sputtering targets for physical vapor deposition (PVD) applications. The MAC SiC sputtering targets enable the deposition of high-purity SiC thin films for demanding applications such as the manufacturing of magnetic disk drive heads. Dielectric SiC films deposited from MAC's CVD SiC targets have higher density, higher thermal conductivity and lower expansion coefficient than dielectric aluminum oxide films, enhancing device performance and enabling new device design structures.
The MAC CVD SiC sputtering targets are manufactured by a chemical vapor deposition (CVD) process, resulting in a homogeneous and monolithic SiC target material unlike sintered SiC targets that are formed using powders, binders and sintering aids. This is an important benefit since sintered SiC targets are vulnerable to particle release, or spitting, during the sputtering process. MAC's CVD SiC targets contain no particles to spit.
In addition, because MAC's CVD SiC sputtering targets are ultra-pure - 99.9995% based on GDMS analysis for metallic impurities - highly pure and uniform SiC films are consistently produced. The SiC films ensure the absence of etch residue (contamination) from reactive ion etch processes that can be used to pattern the SiC film.
The high density and complete lack of porosity in the MAC CVD SiC sputtering targets results in negligible outgassing of the target, and suitability for use in ultra-high vacuum conditions. Further, MAC's CVD SiC have a thermal conductivity that is twice that of sintered SiC targets and are highly resistant to thermal shock, allowing high-power process conditions to be used to achieve a fast SiC film deposition rate via RF diode and RF or DC magnetron sputtering.
MAC offers SiC targets ranging in size from 3 inches to 20 inch diameter or squarer, eliminating the need to tile together smaller pieces.
About Morgan Advanced Ceramics
Morgan Advanced Ceramics (MAC) has a comprehensive range of Ceramic materials, from which its products are manufactured. Supplying to a variety of demanding markets, MAC has established an enviable reputation for providing value-added solutions through world-class research and development, innovative design and, perhaps most important of all, application engineering.
Morgan Advanced Ceramics, together with Morgan Electro Ceramics forms Morgan Technical Ceramics, a division of the Morgan Crucible Company plc. From manufacturing locations in North America, Europe and Asia, Morgan Technical Ceramics supplies an extensive range of products, including ceramic components, braze alloys, ceramic/metal assemblies and engineered coatings.
For more information on Morgan Advanced Ceramics visit www.morganadvancedceramics.com or contact one of our sales offices below:
UK & Eire
Morgan Technical Ceramics, Bewdley Road, Stourport, Worcestershire, DY13 8QR.
Tel: +44 1299 872210 Fax: +44 1299 872218
Morgan Technical Ceramics Sales, Teplitzerstr. 27, D-84478 Waldkraiburg, Germany
Tel: +49 8638 6004 326 Fax: +49 8638 6004 327
Morgan Technical Ceramics Inc, 232 Forbes Road, Bedford, Ohio 44146 5418, USA
Tel: +1 440 232 8600 Fax: +1 440 232 8731
Morgan Technical Ceramics, 158 Jiajian Road, Jiading, Shanghai 201818, People's Republic of China.
Tel: +86 21 5990 0687 Fax: +86 21 5990 3241