Press Release Summary:
Manufactured using silicon technology andÂ supplied in SMT 4 x 4 mm LFCSP, ADRF5130 is specified at 0.7–3.5 GHz with 0.6 dB typ insertion loss, isolation of 50 dB, linearity of +68 dBm, and peak power handling of 44Â W during continuous operation mode. Features include 2,000 V ESD protection on all device pins and fast CMOS-compatible control interface withÂ <1 Âµsec switching time. Symmetrical circuit architecture allows RF inputs to be used interchangeably in high-power applications.
Original Press Release:
Analog Devices' Silicon Switch Reduces Size and Power Consumption in Cellular Radio RF Front Ends
NORWOOD, Mass. – Analog Devices, Inc. (ADI) today introduced a high power (44 watts peak) single-pole, double-throw (SPDT) silicon switch that enables designers to reduce hardware size and bias power consumption in cellular radio systems. As the next generation of communications infrastructure trends toward higher data capacity, cellular radio front ends must scale down in size and provide faster speeds to meet the demands of increased data usage. ADI’s ADRF5130 switch meets these requirements through a high level of integration that eliminates the need for external components. The switch also reduces power consumption to more efficient levels by operating on a single low-voltage supply with extremely low current consumption compared to existing pin-diode-based solutions. The ADRF5130 is manufactured using silicon technology, and is housed in a small 4 mm × 4 mm LFCSP SMT package.
View product page, download data sheet, order samples and evaluation boards: http://www.analog.com/ADRF5130.
Learn about Analog Devices RF switches portfolio: http://www.analog.com/en/products/rf-microwave/rf-switches.html.
Connect with engineers and ADI product experts on EngineerZone®, an online technical support community: https://ez.analog.com/community/rf.
The ADRF5130 is specified at 0.7-GHz to 3.5-GHz frequency band with typical 0.6-dB insertion-loss, high isolation of 50 dB, excellent linearity of +68 dBm and peak power handling of 44 watts during continuous operation mode. The device features robust 2000-V electro-static-discharge (ESD) protection on all device pins. It also incorporates a fast CMOS-compatible control interface with switching time less than 1 us. Additionally, a symmetrical circuit architecture allows the RF inputs to be used interchangeably in high power applications.
Price Each per 1,000
4 mm × 4 mm LFCSP
1 unit @ $99.00
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