Solid State Drives utilize MLC NAND flash memory.

Press Release Summary:

Suited for notebook PCs, solid-state drives (SSDs) come in 32, 64, and 128 GB capacities. Available in 3 form factors including embedded module and 1.8 and 2.5 in. drive enclosures, units use NAND flash memory fabricated with 56 nm process technology, along with controller chips and DRAM, on 70.6 x 53.6 x 3.0 mm platform. SATA II SSDs feature 3 Gbps interface, 0-70°C operating temperature range, and maximum read/write speed of 100 and 40 MBps, respectively.

Original Press Release:

Toshiba Launches High Performance Solid State Drives with MLC NAND Flash Memory

Initial Product Family Includes SATA II SSDs in 32GB, 64GB and 128GB Capacities, In Modules and 1.8-inch and 2.5-inch Form Factors

TOKYO and IRVINE, Calif., Dec. 10 -- Toshiba Corp. (Toshiba) and Toshiba America Electronic Components, Inc. (TAEC)*, its subsidiary in the Americas, today announced their entry into the emerging market for NAND-flash-based solid-state drives (SSDs) with a series of products featuring multi-level cell (MLC) NAND flash memory. Offered in a range of form factors and capacities, Toshiba's solid-state drives are designed primarily for notebook PCs. They will be showcased at the Consumer Electronics Show in Las Vegas, from January 7th to 10th. Samples and mass production will follow from the first quarter (January to March) of next year.

Moving NAND-based storage architecture forward, Toshiba's first solid-state drives offer three capacities: 32 gigabytes(1) (GB), 64GB and 128GB, in three form factors: an embedded module, and 1.8-inch and 2.5-inch drive enclosures. SSDs realize lower power consumption, a faster boot time, higher reliability, improved performance and no mechanical sound compared to hard disk drives, but market penetration has been held back by low densities and high prices. Toshiba's new SSDs integrate an original MLC controller supporting fast read-write speed, parallel data transfer, and wear-leveling, and achieve performance levels comparable to those of single-level cell NAND-flash-based SSDs. By applying MLC technology, Toshiba has realized a 128GB capacity in a 1.8-inch form factor. Toshiba expects the launch of its MLC NAND-based line-up to speed up the acceptance of solid-state memory in laptops and digital consumer products and to widen the horizons of the NAND flash market.

The new products utilize NAND flash memory fabricated with 56nm process technology, along with controller chips and DRAM, on a 70.6mm (L) x 53.6mm (W) x 3.0mm (H) platform. The maximum read speed is 100MB(2) per second, and the maximum write speed is 40MB(2) per second with the SATA II interface (transfer rate of 3Gbps(3)), which is compliant with a high-speed serial interface. The rated operating life is 1,000,000 hours(4).
Outline of the new products
Capacity Type Samples Start of Mass Production
64GB Module SATA Feb., 2008 March, 2008

32GB 1.8" SATA
64GB 2.5" SATA Apr., 2008 May, 2008


Product specification
Interface Serial ATA-II (3Gbps)
Voltage 3.3V (Module, 1.8" type) / 5V (2.5" type)
Writing speed Maximum speed 40MB per second (sequential mode)
Reading speed Maximum speed 100MB per second (sequential mode)
Temperature 0 to 70 degrees Celsius
MTTF 1,000,000 hours

*About Toshiba Corp. and TAEC

Through proven commitment, lasting relationships and advanced, reliable electronic components, Toshiba enables its customers to create market-leading designs. Toshiba is the heartbeat within product breakthroughs from OEMs, ODMs, CMs, distributions and fabless chip companies worldwide. A committed electronic components leader, Toshiba designs and manufactures high-quality flash memory-based storage solutions, discrete devices, displays, advanced materials, medical tubes, custom SoCs/ASICs, digital multimedia and imaging products, microcontrollers and wireless components that make possible today's leading cell phones, MP3 players, cameras, medical devices, automotive electronics and more.

Toshiba America Electronic Components, Inc. is an independent operating company owned by Toshiba America, Inc., a subsidiary of Toshiba Corporation, Japan's largest semiconductor manufacturer and the world's fourth largest semiconductor manufacturer (iSuppli, World's Top Semiconductor Supplier Rankings in 2006). For additional company and product information, please visit

(1) When used herein in relation to memory density, gigabyte and/or GB
means 1,024x1,024x1,024 = 1,073,741,824 bytes. Usable capacity may
be less. For details, please refer to specifications.
(2) Read and write speed may vary depending on the read and write
conditions, such as devices you use and file sizes you read and/or
write. (For purposes of measuring read and write speed in this
context, 1 MB = 1,000,000 bytes).
(3) For purposes of measuring data transfer rate in this context,
1 gigabit or Gb = 1,000,000,000 bits.
(4) The MTTF (Mean Time to Failure) is not a guarantee or estimate of
product life; it is a statistical value related to mean failure rates
for a large number of products which may not accurately reflect actual operation. Actual operating life of the product may not resemble
the MTTF.

Source: Toshiba America Electronic Components, Inc.

Rebecca Buena
of Toshiba America Electronic Components, Inc.,
+1-949-623-3098,; or

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