SiC Power Transistor carries 1,200 V and 45 milliohm ratings.
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Press Release Summary:
Supplied in TO-247 package, SJDP120R045 offers max on-state resistance of 0.045 W; accelerated switching with no tail current; and 175°C max operating temperature. Bare die form (SJDC120R045) is also available. Voltage-controlled, 1,200 V, normally on trench silicon carbide (SiC) power JFET has positive temperature coefficient that facilitates paralleling. Target applications include solar inverters, SMPS, induction heating, UPS, wind applications, and motor drives.
Original Press Release:
At 1200 V and 45 Milliohms, SemiSouth Introduces the Industry's Lowest Resistance SiC Power Transistor for Efficient Power Management
Fast switching, normally on SiC JFET; no 'tail' current, four to ten times lower switching energy than competing 1200 V power switches
SemiSouth Laboratories, Inc., the leading manufacturer of silicon carbide (SiC) transistor technology for high-power, high-efficiency, harsh-environment power management and conversion applications, has launched a new class of record-low, 45 milliohm, 1200 V, normally on trench SiC power JFETs. These breakthrough devices target a range of application spaces, including solar inverters, SMPS, induction heating, UPS, wind applications, and motor drives. This is their sixth product offering of their trench SiC JFET family, which was first released in 2008. This latest device boasts the lowest on-state resistance of any commercial SiC transistor in the world.
The record-low, maximum on-state resistance (RDS(on)max of only 0.045W is achieved with a relatively small die area, resulting in low gate charge and intrinsic capacitance for efficient, low-loss, high-frequency operation. Featuring a positive temperature coefficient for ease of paralleling, the new SJDP120R045 JFETs also offer extremely fast switching with no 'tail' current - even up to its high 175 degC maximum operating temperature in a TO-247 package. The product is also available in bare die form (SJDC120R045) for module partners. Being voltage-controlled, there are a number of easy gate drive schemes possible for the JFET, with complete reference designs and application notes available upon request from the Company.
Comments Dieter Liesabeths, Director of Sales: "SemiSouth's SiC power semiconductors deliver industry-leading performance coupled with competitive pricing. These new JFETs have three to four times lower switching losses than competing devices, as well as up to 50% lower on-resistance, lower costs, and improved reliability. With our simple gate drive solutions, it is easy to argue that they are also easier to drive than MOSFETs. The JFETs are commercially available in TO-247 (SJDP120R045) and bare die (SJDC120R045) format for integration into high-performance, high-efficiency power modules. We are seeing rapid adoption of this product from customers in solar inverter, automotive, medical, wind applications, industrial power supply, and other markets."
SemiSouth products are available through a global distribution network of several high-quality reps/distributors, listed at ( semisouth.com/contact/salesreps-distributors.html ).
About SemiSouth Laboratories, Inc.
SemiSouth, a privately owned corporation with its main offices and foundry in Starkville, Mississippi, (USA), focuses on silicon carbide (SiC) power devices and electronics, targeting applications such as: solar inverters; power conversion in computing and network power supplies; variable-speed drives for industrial motors and hybrid electric vehicles; and products used in high-power, harsh-environment military and aerospace environments. The company was formed in 2000, has sold products globally through direct sales or distributors since 2005, and received a major growth investment from Power Integrations (NASDAQ: POWI) in 2010. It introduced the world's first commercial, cost-effective normally-off SiC JFETs in 2008, which have enabled world-record energy efficiencies for its customer's products. More information is available at www.semisouth.com.
