Press Release Summary:
Integrating SiC SBD and SiC-MOSFET into single package, 1,200 V/300 A Model BSM300D12P2E001 is designed for inverters and converters in solar power conditioners and industrial equipment. Device features optimized chip layout and module construction that minimizes internal inductance, suppressing surge voltage while supporting operation up to 300 A. Switching loss is 77% lower than conventional IGBT modules, enabling high-frequency operation and smaller cooling systems.
Original Press Release:
ROHM Expands its Full SiC Power Module Lineup
New 1200V/300A model ideal for high power applications
KYOTO, Japan and SANTA CLARA, Calif., – ROHM has recently announced the development of a 1200V/300A full SiC power module designed for inverters and converters in solar power conditioners and industrial equipment.
The high 300A rated current makes the BSM300D12P2E001 suitable for high power applications such as large-capacity power supplies for industrial equipment, while 77% lower switching loss vs. conventional IGBT modules enables high-frequency operation, contributing to smaller cooling countermeasures and peripheral components.
In March 2012, ROHM began mass production of the world's first full SiC power module with an integrated power semiconductor element composed entirely of silicon carbide. In addition, its 120A and 180A/1200V products continue to see increased adoption in the industrial and power sectors. And although further increases in current are possible due to energy-saving effects, in order to maximize the high-speed switching capability of SiC products, an entirely new package design is needed that can minimize the effects of surge voltage during switching, which can become particularly problematic at higher currents.
In response, the BSM300D12P2E001 features an optimized chip layout and module construction that significantly reduces internal inductance, suppressing surge voltage while enabling support for higher current operation up to 300A. And going forward, ROHM will continue to strengthen its lineup by developing products compatible with larger currents by incorporating SiC devices utilizing high voltage modules and trench configurations.
1. Reduced switching loss through higher frequency operation
Replacing IGBT modules is expected to reduce switching loss by up to 77%, enabling smaller cooling systems to be used. And higher frequency switching will make it possible to decrease the size of peripheral components such as the coil and capacitors, improving efficiency while contributing to greater end-product miniaturization
2. Lower inductance improves current-handling capability
Increasing the rated current for power modules involves reducing the internal inductance to counter the higher surge voltages generated during switching. The BSM300D12P2E001 features an all-SiC construction and optimized circuit layout that cuts internal inductance by half, making it possible to increase the rated current to 300A.
-- Full SiC module integrates an SiC SBD and SiC-MOSFET into a single package
-- Equivalent package size as standard IGBT modules
-- Built-in thermistor
-- Tjmax=175 degrees C
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