RLDRAM Memory enables 100G Ethernet applications.

Press Release Summary:

Offering 576 Mb density, RLDRAM® 3 Memory is suited for 100G networking applications such as packet optical transport, carrier Ethernet switches and routers, and core and edge routers. Product offers Multibank WRITE feature that allows random READ accesses every 2 ns, which is on par with high-speed SRAM but with density that comes with DRAM. RLDRAM® 3 Memory is available in industrial and commercial temperature ranges and in leaded and lead-free packages.

Original Press Release:

ISSI Announces Sampling of RLDRAM® 3 Memory Helps Enable 100G Ethernet and Transport Applications

SAN JOSE, Calif., -- Integrated Silicon Solution, Inc. (Nasdaq:ISSI), a leader in advanced memory solutions, today announced that it is sampling RLDRAM 3 memory. RLDRAM 3 memory offers a 576Mb density with the DRAM industry's fastest random access times (tRC). The device is ideally suited to 100G networking applications such as Packet Optical Transport, Carrier Ethernet Switches and Routers (CESR), and Core and Edge Routers.

Service providers are combining residential, business, and mobile services onto a single IP network. This is driving the need for a cost-effective, high-performance memory with fast random access rates (tRC). RLDRAM 3 memory offers a new Multibank WRITE feature that allows random READ accesses every 2ns - on par with high-speed SRAM but with the density and cost-effectiveness that comes with DRAM.

"We are pleased to announce our sampling of RLDRAM 3 memory as it expands our portfolio of high-speed memories, which also includes RLDRAM 2 memory and QUAD/DDR-II SRAMs," said Pat Lasserre, ISSI Director of Strategic Marketing. "Our addition of RLDRAM 3 has been well received by our customers in the communications and networking space as evidenced by the high demand for qualification samples. And as these customers require long-term support, we are committed to providing RLDRAM 3 memory for many years to come."

ISSI will offer RLDRAM 3 memory in Industrial and Commercial temperature ranges and in Leaded and Lead-free packages.

About Integrated Silicon Solution, Inc.

ISSI is a fabless semiconductor company that designs and markets high performance integrated circuits for the following key markets: (i) automotive, (ii) communications, (iii) industrial, medical, and military, and (iv) digital consumer. The Company's primary products are high speed and low power SRAM and low and medium density DRAM, and with its acquisition of Si En, the Company also designs and markets high performance analog and mixed signal integrated circuits. ISSI is headquartered in Silicon Valley with worldwide offices in Taiwan, Japan, Singapore, China, Europe, Hong Kong, India, and Korea. Visit our web site at http://www.issi.com/.

RLDRAM® is a registered trademark of Micron Technology, Inc.

CONTACT: Integrated Silicon Solution, Inc.

Pat Lasserre 408.969.4626


Tom Doczy 408.969.4620


© 2008 ISSI. All Rights Reserved.


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