RFMD® to Demo GaN High-Power Transistor Line-Up for UMTS Applications at IEEE MTT-S 2006


RFMD to Showcase Its Broad Product Portfolio of Industry-Leading Wireless Solutions

GREENSBORO, N.C.- June 6, 2006 -RFMD® (NASDAQ:RFMD), a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications, today announced that it will conduct a live demonstration of its Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) high-power transistor line-up for UMTS and will display its latest performance results for WiMAX applications at IEEE MTT-S International Microwave Symposium 2006 in San Francisco, California on June 13-15, 2006, at Booth 1207.

The demonstration will feature RFMD's new GaN HEMT high-power transistor line-up deployed in a digital pre-distortion system.

Digital pre-distortion improves the linear efficiency performance of the high power transistor line-up with error correction for wireless infrastructure applications. RFMD will highlight latest performance data including:

o Drain efficiency
o Saturated power output
o Gain
o Linearity

RFMD has been selected by the IMS to present two technical papers focused on GaN technology, including:

o WE3B-3 "Performance and RF Reliability of GaN-on-SiC HEMTs Using Dual-Gate Architectures", Rama Vetury. This paper will be presented on June 14, from 1:20-3:00 p.m. PT at Moscone 304.

o TH1B-3 "Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction", Matthew Poulton. This paper will be presented on June 15, from 8:00-9:40 a.m. PT at Moscone 304.

RFMD's portfolio of highly integrated RF components and system solutions includes its industry-leading transmit modules and power amplifiers (PAs) for GSM/GPRS, GSM/GPRS/EDGE, CDMA and WCDMA handsets, the Company's POLARIS(TM) TOTAL RADIO(TM) transceiver solutions for GSM/GPRS and GSM/GPRS/EDGE handsets, and its highly-integrated Bluetooth®, wireless LAN (WLAN) and GPS solutions.

RFMD's products are selected by the world's leading manufacturers of wireless mobile devices to simplify their design process and accelerate the time to market of their next-generation, feature-rich wireless devices. At its booth in San Francisco, RFMD will display wireless handsets and other wireless mobile devices featuring the Company's industry-leading solutions from customers such as Motorola, Nokia, Samsung, Sony Ericsson, LG, NEC, Research In Motion, Palm and others.

About RFMD

RFMD is a global leader in the design and manufacture of high-performance radio systems and solutions for applications that drive mobile communications. RFMD's power amplifiers, transmit modules, cellular transceivers and system-on-chip (SOC) solutions enable worldwide mobility, provide enhanced connectivity and support advanced functionality in current- and next-generation mobile handsets, cellular base stations, wireless local area networks (WLANs), wireless personal area networks (WPANs) and global positioning systems (GPS). Recognized for its diverse portfolio of state-of-the-art semiconductor technologies and vast RF systems expertise, RFMD is a preferred supplier enabling the world's leading mobile device manufacturers to deliver advanced wireless capabilities that satisfy current and future market demands.

Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ National Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.

CONTACT: RFMD
Jerry Neal or Doug DeLieto, 336-664-1233

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