New Amplifiers Deliver Best-In-Class Composite Second Order (CSO) Distortion Performance, Enable Future DOCSIS®-Compliant Return Path Networks
DENVER, COLORADO - October 29, 2009 - RF Micro Devices, Inc. (Nasdaq GS: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, today introduced a portfolio of push-pull amplifiers designed for multiple CATV infrastructure applications. The CGA/CGR product portfolio includes the CGA-1518Z and CGA-7718Z amplifiers for forward path, downstream applications and the CGR-0118Z and CGR-0218Z amplifiers for return path, upstream applications.
Each amplifier in RFMD's CGA/CGR product portfolio leverages the Company's proprietary HBT8D InGaP HBT process technology, combined with "push-pull" architecture, to deliver best-in-class Composite Second Order (CSO) distortion performance. RFMD's push-pull amplifiers are designed for ultra-linear amplification in current and next generation CATV applications, including multiple dwelling unit (MDU) amplifiers, low cost line extenders (LE), and customer premises equipment (CPE).
The CGA-1518Z matches the gain of competing +12 Vdc push-pull amplifiers with lower multi-carrier distortion and a reduction of > 1.5 Watt in DC power consumption. The CGA-7718Z offers higher gain and lower multi-carrier distortion performance than the CGA-1518Z while consuming 1 Watt less DC power than competing +12Vdc push-pull amplifiers. The CGA-1518Z and CGA-7718Z push-pull amplifiers are ideal for applications that require superior broadband amplification and must conserve DC power, such as CPE, MDUs and battery back-up cable and telephone networks carrying voice, data, and video.
The CGR-0118Z offers the broadband industry's only 25-dB gain surface mount device (SMD) return path amplifier capable of ultra-linear +50 dBmV RF output per channel performance from 5 to 65 MHz combined with low multi-carrier distortion, excellent modulation error ratio (MER) and low DC power consumption. The CGR-0218Z provides unmatched 5 to 210 MHz bandwidth for ultra-linear return path applications requiring a SMD package, making it ready now for "mid-split" return path architectures and "future proof" for soon-to-be-implemented DOCSIS® 3.0 compliant 5 to 85 MHz return path networks. The CGR-0118Z and CGR-0218Z meet the performance requirements demanded by channel bonding capable return path networks, MDU class return amplifiers, and CPE cable modems.
RFMD leads the world in III-V semiconductor technology innovation and is the world's leading manufacturer of GaAs HBT and InGaP HBT process technologies.
Production quantities of the CGR-0118Z, CGR-0218Z, CGA-1518Z and CGA-7718Z are available immediately.
RFMD is exhibiting at the SCTE Cable-Tec Expo '09, October 28 - 30, in Denver, Colorado.
RF Micro Devices, Inc. (Nasdaq:RFMD) is a global leader in the design and manufacture of high-performance semiconductor components. RFMD's products enable worldwide mobility, provide enhanced connectivity and support advanced functionality in the cellular handset, wireless infrastructure, wireless local area network (WLAN), CATV/broadband and aerospace and defense markets. RFMD is recognized for its diverse portfolio of semiconductor technologies and RF systems expertise and is a preferred supplier to the world's leading mobile device, customer premises and communications equipment providers.
Headquartered in Greensboro, N.C., RFMD is an ISO 9001- and ISO 14001-certified manufacturer with worldwide engineering, design, sales and service facilities. RFMD is traded on the NASDAQ Global Select Market under the symbol RFMD. For more information, please visit RFMD's web site at www.rfmd.com.
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