RF Transistor operates from DC to 2.7 GHz.
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Press Release Summary:
Model CRF-24010 Class A/B, 48 V silicon carbide MESFET offers minimum gain of 13 dB at 2 GHz, and has IM3 of -31 dBc at peak envelope power of 10 W. It features multi-octave instantaneous bandwidth, making is suitable for broadband large signal applications.
Original Press Release:
Cree Microwave Introduces New Higher Gain SiC MESFET RF Transistor
10 watt Class A/B device offers >3 dB higher gain and higher efficiency
Durham, NC, May 22, 2003 - Cree Microwave, Inc., a subsidiary of Cree, Inc. (NASDAQ: CREE), announced that its 2nd generation 48 V silicon carbide (SiC) MESFET process has been released to production. The initial product based on this new process is the CRF-24010, a Class A/B 10 W SiC MESFET with a minimum gain of 13 dB at 2 GHz, which is greater than 3 dB higher than previous SiC MESFETs. This device has an IM3 of -31 dBc at a peak envelope power of 10 W, operates from DC to 2.7 GHz, and has multi-octave instantaneous bandwidth, making it ideal for a variety of broadband large signal applications. The device has passed initial internal product reliability tests and is available for customer sampling.
"We have received strong interest in the use of SiC RF MESFETs for a variety of very wide bandwidth communications applications, and the much higher gain of this new process should allow for even better performance and wider bandwidths to be obtained", stated John Palmour, Cree's Executive Vice President of Advanced Devices. "The wide bandwidth capability is due to the much higher output impedance for a given power level for SiC as compared to silicon or gallium arsenide RF devices. An additional benefit of this new Class A/B SiC MESFET process versus our previous Class A process is that the power added efficiency under rated conditions increases from 38% to greater than 44% at P1dB."
Cree Microwave designs, manufactures and markets a complete line of high-quality, customizable and cost-effective radio frequency (RF) power semiconductors, the critical component utilized in building wireless power amplifiers for cellular and personal communications services (PCS) infrastructure. The company designs and manufactures laterally diffused metal-oxide silicon (LDMOS) and bipolar power semiconductors for operation up to 2.4 GHz, as well as wide bandgap semiconductor RF power devices. Cree Microwave's operating headquarters are at 160 Gibraltar Court, Sunnyvale, California 94089. For more information on Cree Microwave, please visit www.creemicrowave.com or call Cree Microwave at 408-745-5700.
