RF Power Transistor targets UHF broadcast applications.

Press Release Summary:

Designed for TV transmitters utilizing analog/digital modulation formats, MRF6VP3450H delivers more than 450 W peak power at P1 dB with 50% efficiency across UHF band. Using DVB-T 64 QAM OFDM signal at 90 W average output power, typical 860 MHz 50 V performance is 28% drain efficiency and 23 dB gain, with adjacent channel power ratio at 4 MHz offset of -62 dBc in 4 kHz bandwidth. Rugged 50 V LDMOS unit handles very high impedance mismatches without damage and incorporates ESD protection.

Original Press Release:

Freescale 450 Watt RF Power Transistor Offers Unprecedented Peak Power for UHF Broadcast Applications

50 V LDMOS device designed to enable significant system-level power and cost savings for TV transmitters

LAS VEGAS (National Association of Broadcasters Show) - April 14, 2008 - Freescale Semiconductor has introduced a 50 volt laterally diffused MOS (LDMOS) RF power transistor designed to deliver 50 percent higher output power than competing UHF TV broadcast solutions.

Demonstrating industry-leading RF figures of merit, the MRF6VP3450H device offers the highest output power in its class for UHF applications while enabling system-level power reductions that can potentially save broadcasters thousands of dollars in operating costs. The MRF6VP3450H delivers more than 450 W peak power at P1dB with 50 percent efficiency throughout the UHF broadcast frequency band.

The latest addition to Freescale's growing family of RF power LDMOS transistors for broadcast applications, the MRF6VP3450H is designed for TV transmitters employing both analog and digital modulation formats. Transmitters represent a significant operating cost for TV broadcasters, and a leading contributor to this operating cost is the power consumed by RF power amplifiers.

Highly efficient RF power transistors, such as the MRF6VP3450H, can help reduce this cost by converting a greater percentage of the required AC input power into RF output power. Ultimately, this efficiency reduces the energy usage required by the transmitter. In addition, individual transistors with higher RF power capability enhance system-level efficiency by minimizing device count and combining losses.

"As energy costs continue to soar, the ability to use highly efficient, cost-effective TV transmitters is critical to broadcasters," said Gavin P. Woods, vice president and general manager of Freescale's RF Division. "Transmitters designed with our new MRF6VP3450H device not only deliver dramatic annual energy savings, but also can significantly reduce transmitter cost by helping to minimize the number of required RF power transmitters."

The MRF6VP3450H device is designed to offer the best combination of power, efficiency and gain of any RF power transistor designed for 470 to 860 MHz TV broadcast operation. Using a DVB-T 64 QAM OFDM signal at 90 W average output power, the typical 860 MHz 50 V performance is 28 percent drain efficiency and 23 dB gain, with an adjacent channel power ratio (ACPR) at 4 MHz offset of -62 dBc in a 4 kHz bandwidth.

In addition to offering exceptional figures of merit, the MRF6VP3450H device can help ease the transition from analog to digital TV broadcast. The global broadcast industry is moving rapidly to digital modulation from the analog modulation schemes that have been employed for more than 70 years. After February 2009, digital broadcasting will replace all analog modulation schemes in the United States, and broadcasters worldwide will soon be "fully digital." This conversion to digital broadcasting places significant demands on a transmitter's power amplifier and RF power transistors because the signals have very high peak-to-average ratios. As a result, RF power transistors used for the conversion must exhibit extremely high linearity under a wide range of operating conditions, as well as high efficiency and ruggedness to ensure long operating life.

The MRF6VP3450H device is based on Freescale's sixth-generation, high-voltage (VHV6) 50 V LDMOS process technology. This advanced technology has resulted in major breakthroughs, including the first 1 kW LDMOS FET and the first 300 W UHF RF power transistor for broadcast applications in over-molded plastic packaging. Freescale's broadcast portfolio now includes 32 V and 50 V devices covering 10 MHz to 860 MHz at power levels from 10 W to more than 1 kW - the widest range of power levels available in the industry. All of the devices in the portfolio are RoHS compliant.

The MRF6VP3450H is extremely rugged and is designed to handle very high impedance mismatches without damage. For example, operating at 50 V and 90 W average DVB-T OFDM, it can survive all phase angles of a 10:1 VSWR. Similarly, it will survive the same mismatch operating at 450 W peak pulsed power (10 us pulse, 2.5 percent duty cycle). The device also incorporates protection against electrostatic discharge (ESD), which makes it less susceptible to damage during handling and manufacturing.

The MRF6VP3450H is sampling now, and full production is expected in the third quarter of 2008. A reference test fixture is available from Freescale today, and a large-signal model is expected in the fourth quarter, 2008. For specific sampling and pricing information, please contact Freescale, a local Freescale sales office or an authorized dealer.

For more information about the MRF6VP3450H, visit www.freescale.com/files/pr/mrf6vp3450h.html.

About Freescale Semiconductor
Freescale Semiconductor is a global leader in the design and manufacture of embedded semiconductors for the automotive, consumer, industrial, networking and wireless markets. The privately held company is based in Austin, Texas, and has design, research and development, manufacturing or sales operations in more than 30 countries. Freescale is one of the world's largest semiconductor companies with 2007 sales of $5.7 billion (USD). www.freescale.com

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Freescale and the Freescale logo are trademarks or registered trademarks of Freescale Semiconductor, Inc. in the U.S. and other countries. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008

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