Press Release Summary:
Designed using SIGANTICÂ® NRF1 process, NPT1004 delivers 45 W at 28 V for high PAR and pulsed applications. Device combines broadband DC to 4 GHz GaN-on-Si high electron mobility transistor with thermally enhanced plastic package to offer solution for light thermal load power applications. RoHS-compliant transistor delivers 5 W average power for 2.5-2.5 GHz WiMAX applications and 4.5 W for 3.3-3.5 GHz WiMAX applications.
Original Press Release:
Nitronex Develops 45W GaN-on-Si RF Power Transistor for High Peak-to-Average Power Applications
LAS VEGAS - GOMAC Tech, Booth #106 (March 19, 2008) -- Nitronex, the leading producer of GaN-on-Silicon RF power devices for the broadband and commercial wireless infrastructure markets, has developed a gallium nitride high electron mobility transistor (HEMT) that delivers 45W at 28V for high PAR (peak to average ratio) and pulsed applications.
Designed using Nitronex's patented SIGANTIC® NRF1 process, the NPT1004 combines a broadband DC to 4GHz high power density GaN-on-Si HEMT with a cost-effective thermally-enhanced plastic package to offer an optimized solution for light thermal load power applications.
"Feedback from early customers confirms that the NPT1004 is an excellent fit for high peak to average power amplifiers for WiMAX and pulsed waveforms found in radar, telemetry and medical applications," said Chris Rauh, VP of Marketing and Sales at Nitronex. "We believe these markets need the unique power, bandwidth and efficiency combination GaN devices can offer and Nitronex is excited to offer a product optimized for this customer base." The NPT1004 delivers 5W average power for 2.5-2.5GHz WiMAX applications (single carrier OFDM 64-QAM ¾, 10.3dB peak to average, 10MHz channel
bandwidth) and 4.5W for 3.3-3.5GHz WiMAX applications (single carrier OFDM 64-QAM ¾, 10.3dB peak to average, 3.5MHz channel bandwidth).
The NP1004 is packaged in a thermally enhanced PSOP package, samples and application boards are available. The 1,000 resale price is $29.00, with a lead time from stock to ten weeks. The NPT1004 transistors are lead-free and RoHS compliant.
For more information about Nitronex's GaN-on-Si products, contact Nitronex at 2305 Presidential Dr., Durham, NC, 27703; call 919-424-9100; or e-mail firstname.lastname@example.org.
Specializing in the development and manufacturing of gallium nitride-on-silicon (GaN-on-Si) RF power devices, Nitronex is the global leader in high-performance GaN-on-Si RF power devices. Based on its patented SIGANTIC® process - gallium nitride on silicon technology - Nitronex is at the forefront of commercializing GaN technology for RF applications. The company's ability to combine the disciplines of material growth, wafer processing, device design and wireless applications knowledge is unique to the industry. Nitronex was founded in 1999 by graduates of the wide bandgap program at North Carolina State University and is headquartered in Durham, North Carolina. It holds 19 patents with 19 others pending.