RF Power Products operate at frequencies up to 30 MHz.

Press Release Summary:




Designed for Class C, D, and E applications operating from 1-30 MHz, flangeless-packaged RF MOSFET Power Products feature 250 V operation and 600 W continuous wave output power. Model DRF100 RF Driver IC has 8 A output for driving 500-1,200 V RF MOSFETs. Model DRF1200 is comprised of DRF100 RF driver IC along with 1,000 V RF MOSFET output. Coplanar lead arrangement facilitates circuit layout and provides more than 2,500 V isolation between terminal and mounting surface.



Original Press Release:



Microsemi Announces RF Driver IC and Integrated RF Power Solution Products



IRVINE, Calif., July 25, 2006 - Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, has announced the addition of the DRF100 and DRF1200 to its family of high voltage, flangeless-packaged, RF MOSFET Power Products.

RF Power MOSFETs are widely used in RF generators for plasma generation, CO2 laser excitation, MRI equipment, broadband linear amplifiers and HF/VHF communications equipment.

o 600 Watts CW Output Power
o Low Cost Flangeless package
o Operation up to 30 MHz
o 250 V Operation / 1,000 V BVDSS
o Class, C, D, E Capable

The DRF100 is an RF Driver IC with an 8A output capable of driving high power, 500 - 1200V RF MOSFETs at frequencies up to 30 MHz. It also features a dynamic "anti ring" function that prevents cross conduction of the MOSFETs in bridge or push-pull topologies.

The DRF1200 is an integrated solution comprised of the DRF100 RF driver IC and a high power 1,000V RF MOSFET output. The close proximity of the driver and MOSFET in a single package greatly reduces circuit inductance compared to discrete alternatives.

The DRF100 is available in the new flangeless T3 package, while the DRF1200 is available in the new T2 flangeless package. These packages lower thermal resistance and costs compared to traditional copper tungsten flanged devices. To obtain the high power dissipation, the backside of the new packages is lapped to provide an optimum thermal interface surface to mate with the system heat sink. The coplanar lead arrangement facilitates circuit layout and provides more than 2500 volts isolation between any terminal and the mounting surface.

Both devices are designed for Class C, D and E RF generator applications operating from 1-30MHz; as well as for pulsed power and modulator applications. DRF100 and DRF1200 evaluation boards are available from the factory and authorized Microsemi PPG distributors to enable rapid evaluation of device performance. In 100 pc quantities the DRF100 is priced at $92.83 and the DRF1200 is priced at $206.44. Both devices and their evaluation boards are available from stock.

About Microsemi Corporation
Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed signal integrated circuits and high reliability semiconductors. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.

Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance, reliability and battery optimization, reducing size or protecting circuits. The principal markets the company serves include implantable medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by visiting its web site at www.microsemi.com.

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