RF Power Amplifier Module offers dual-band capability.
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Press Release Summary:
Manufactured in 3 x 3 mm LCC package, RMPA2265 PowerEdge(TM) WCDMA/UMTS RF PAM supports 1850-1910 MHz and 1920-1980 MHz operation to address frequency flexibility and size requirements of mobile handsets, PDAs, and wireless PC data cards. Lead (Pb)-free unit complies with HSDPA standard and utilizes InGaP Heterojunction Bipolar Transistor technology. It has selectable high/low power modes and 2-stage power amp that internally matches input and output to 50 Ω.
Original Press Release:
Fairchild Semiconductor's 3G Power Amplifier Module Offers the First Dual-Band Capability in the Industry's Smallest Package
South Portland, Maine-May 2, 2005-Fairchild Semiconductor's PowerEdge(TM) dual-band WCDMA / UMTS* RF Power Amplifier Module (PAM) increases power-added efficiency (PAE) to 42%, a significant improvement over competitive offerings. As the first 3G PAM to offer both 1850-1910 MHz and 1920-1980 MHz operation in a 3x3 mm LCC package, Fairchild's RMPA2265 is approximately 44% smaller than alternative 4x4 mm packages. The RMPA2265 addresses the high efficiency, frequency flexibility and size requirements of today's 3G mobile handsets, PDAs and wireless PC data cards. The RMPA2265 is also compliant with the emerging High-Speed Downlink Packet Access (HSDPA) standard.
"Fairchild's PowerEdge dual-band PAMs enable OEMs to design products, allowing customers to access greater frequency band options and significantly extend the range of coverage," says Russ Wagner, general manager of Fairchild's RF power products group. "With increasingly converging functions in cell phones, and the need for power efficiency, the RMPA2265 offers advantages in reducing board space, extending talk time and dual-band frequency flexibility in the industry's smallest package."
The RMPA2265's excellent linearity and high power-added efficiency are achieved through Fairchild's proprietary InGaP Heterojunction Bipolar Transistor (HBT) technology. The device has selectable high/low power modes used to further optimize current consumption. The two-stage power amplifier internally matches both the input and output to 50 Ohms to minimize the use of external components, thus simplifying design requirements.
The lead (Pb)-free RMPA2265 meets or exceeds the requirements of the joint IPC/JEDEC standard J-STD-020B and is compliant with European Union requirements now in effect.
Price (each, 10,000 pcs): $0.98
Availability: Now
Delivery: 6-8 Weeks ARO
For a downloadable datasheet of this product, go to: http://fairchildsemi.com/ds/RM/RMPA2265.pdf
For information on other Fairchild products, design tools and sales contacts, please visit: www.fairchildsemi.com.
About Fairchild Semiconductor
Fairchild Semiconductor (NYSE: FCS) is the leading global supplier of high performance power products critical to today's leading electronic applications in the computing, communications, consumer, industrial and automotive segments. As The Power Franchise®, Fairchild offers the industry's broadest portfolio of components that optimize system power through minimization, conversion, management and distribution functions. Fairchild's 9,000 employees design, manufacture and market power, analog & mixed signal, interface, logic, and optoelectronics products from its headquarters in South Portland, Maine, USA and numerous locations around the world. Please contact us on the web at: www.fairchildsemi.com.
* WCDMA (Wideband Code Division Multiple Access) / UMTS (Universal Mobile Telephone Service)
