Pulse Transistor suits S-band radar applications.

Press Release Summary:




Housed in hermetically sealed package, class C Model 2731-100M provides 100 W peak power, 40% collector efficiency, and 8.0 dB power gain flatness. Unit performs over 2.7-3.1 GHz frequency range with 250 µs pulse width and 10% duty cycle. Providing VSWR 2:1 load mismatch and Vcc of +36 V, transistor is suited for air traffic control and military radar applications.



Original Press Release:



Microsemi Introduces Higher Power, High Gain, Medium Pulse Transistor for S-Band Radar



IRVINE, Calif., June 12, 2006 (PRIMEZONE) -- Microsemi Corporation (Nasdaq:MSCC), a leading manufacturer of high performance analog/mixed signal integrated circuits and high reliability semiconductors, has announced the addition of a new high power, high gain medium pulse transistor to its line of products for S-Band radar applications.

-- 250us pulse width, 10% duty cycle
--100 Watts Peak Power
-- 8.0 dB Power Gain Flatness

Designated the 2731-100M, the latest transistor from Microsemi's new RF Power Products Division is a high performance, common base, class C, output stage offering unparalleled performance of 100W of peak power, 40% collector efficiency, excellent 8.0 dB power gain flatness, and a hermetically-sealed high reliability package for Air Traffic Control and Military Radar applications.

The 2731-100M utilizes a new chip design and processing enhancements to offer state-of-the-art performance, notably in high power and high gain over the 2.7 to 3.1 GHz frequency range, with a 250us pulse width and 10% duty cycle. Other features include a VSWR 2:1 load mismatch and a Vcc of +36V.

"This is a significant step for our overall product development and marketing strategy," said Jerry Chang, Director of Radar and RF Module Business. "We are extremely pleased to add this top-notched S-Band product to our UHF, P-Band, L-Band, and S-Band Radar Product Family," Chang said. "This is a leading edge S-Band product designed to strengthen our position in the S-Band Radar market segment. It demonstrates again the commitment we have to serve our valued radar customers with strong custom design and development capabilities, excellent technical and product support, and the ability to deliver high volume transistors having the best repeatability and consistency in the industry," Chang added.

About Microsemi Corporation
Microsemi Corporation, with corporate headquarters in Irvine, California, is a leading designer, manufacturer and marketer of high performance analog and mixed signal integrated circuits and high reliability semiconductors. The company's semiconductors manage and control or regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.

Microsemi's products include individual components as well as integrated circuit solutions that enhance customer designs by improving performance and reliability, battery optimization, reducing size or protecting circuits. The principal markets the company serves included implanted medical, defense/aerospace and satellite, notebook computers, monitors and LCD TVs, automotive and mobile connectivity applications. More information may be obtained by contacting the company directly or by visiting its web site at www.microsemi.com.

CONTACT: Microsemi Corporation
Cliff Silver, Manager, Corporate Communications
(949) 221-7112

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