Power Transistor targets L-Band pulsed radar applications.

Press Release Summary:




Consisting of gold-metalized pre-matched GaN on Silicon Carbide transistor, MAGX-001214-500L00 provides 500 W of output power with 19 dB of gain, 55% efficiency, and 300 µs pulse. High breakdown voltages allow for operation at 50 V under extreme load mismatch conditions. Operating in frequency range of 1,200–1,400 MHz, HEMT transistor is available in both flanged and flangeless packages.



Original Press Release:



M/A-COM Technology Solutions Announces New 500 W GaN on SiC HEMT Pulsed Power Transistor



Internally Matched 500 W Power Transistor Provides High Gain, Efficiency and Ruggedness over 1.2-1.4 GHz Bandwidth



Lowell, MA, – M/A-COM Technology Solutions Inc. (M/A-COM), a leading supplier of high performance analog semiconductor solutions, introduced today a new market leading GaN on SiC HEMT Power Transistor for L-Band pulsed radar applications. 



The MAGX-001214-500L00 is a gold-metalized pre-matched GaN on Silicon Carbide transistor optimized for pulsed L-Band radar applications. The MAGX-001214-500L00 provides 500W of output power with 19 dB of gain and 55% efficiency.  The device also boasts very high breakdown voltages, which allows for operation at 50 V under more extreme load mismatch conditions. The device is assembled using state of the art design and packaging assembly, which enables the customer to reach higher gain and efficiency for today’s demanding applications.



“The transistor is a clear leader in high pulsed power GaN technology with 500W of output power combined with excellent gain, efficiency and rugged performance,” said Paul Beasly, Product Manager. “The device is an ideal candidate for customers looking to upgrade L-Band radar systems to the next level of pulsed power performance and experience the solid reliability that is offered by M/A-COM’s GaN Power Solutions.”



Operating between the 1200 MHz – 1400 MHz Frequency range, the MAGX-001214-500L00 is a highly robust transistor, boasting a mean time to failure (MTTF) of 5.3*106hours, and is available as both flanged and flangeless packaged devices.



The table below outlines typical performance:













































Parameters

Units

MAGX-001214-500L00

Frequency

MHz

1200-1400

Pout

W

500

Gain

dB

19.2

Efficiency

%

55

Pulse

µs

300

Duty

%

10

Pulse Droop

dB

0.4

 

Samples of MAGX-001214-500L00are available from stock. Final datasheets and additional product information can be obtained from the M/A-COM website at: www.macomtech.com.



ABOUT M/A-COM TECHNOLOGY SOLUTIONS INC.

M/A-COM Technology Solutions (www.macomtech.com) is a leading supplier of high performance analog semiconductor solutions for use in radio frequency (RF), microwave, and millimeter wave applications. Recognized for its broad portfolio of products, M/A-COM serves diverse markets, including CATV, wireless infrastructure, optical communications, aerospace and defense, automotive, industrial, medical, and mobile devices. M/A-COM builds on more than 60 years of experience designing and manufacturing innovative product solutions for customers worldwide.



Headquartered in Lowell, Massachusetts, M/A-COM is certified to the ISO9001 international quality standard and ISO14001 environmental management standard. M/A-COM has design centers and sales offices throughout North America, Europe, Asia and Australia.



M/A-COM Tech, M/A-COM Technology Solutions, The First Name in Microwave and the M/A-COM logo are trademarks of M/A-COM. All other trademarks are the property of their respective owners.



FOR SALES INFORMATION, PLEASE CONTACT:

North Americas -- Phone: 800.366.2266

Europe -- Phone: +353.21.244.6400

India -- Phone: +91.80.43537383

China – Phone: +86.21.2407.1588



MEDIA CONTACT:

Husrav Billimoria

M/A-COM Technology Solutions Inc.

978-656-2896

Husrav.Billimoria@macomtech.com

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