Power Transistor leverages gallium nitride (GaN) technology.

Press Release Summary:




Fully qualified NPT1015 is 28 V, DC–2.5 GHz, 50 W power transistor with 15 dB saturated gain, 65% peak drain efficiency at 2 GHz, and thermal resistance is 1.9°C/W. During VSWR testing, all devices operated in saturated average power condition driven by 4,000 carrier 200 MHz wideband signal with 19.5 dB peak-to-average ratio. The devices showed 100% survivability and ~0.2 dB average change in saturated output power. SIGANTIC® GaN-on-Si process uses 4 in. silicon substrate.



Original Press Release:



Nitronex Qualifies the Rugged and Reliable NPT1015 Transistor



Nitronex updates design process to create industry’s toughest transistor...



DURHAM, NC - Nitronex, a leader in the design and manufacture of gallium nitride (GaN) based RF solutions for high performance applications in the defense, communications, cable TV, and industrial & scientific markets, has fully-qualified the robust NPT1015 transistor. The NPT1015 is a 28V, DC-2.5GHz, 50W power transistor with 15dB saturated gain and 65% peak drain efficiency at 2GHz. The thermal resistance of the NPT1015 transistor is 1.9°C/W, which is among the lowest in the industry in this power class. This GaN technology is capable of surviving the industry’s most severe robustness tests without significant device degradation.



Developed under an entirely new design process, the NPT1015 leverages Nitronex’s existing 28V NRF1 process platform, which has been in volume production since 2009. One hundred NPT1015 devices from four wafers were subjected to a 15:1 VSWR at all phase angles with 90°C base plate temperature. During VSWR testing, all devices operated in a saturated average power condition driven by a 4000 carrier 200MHz wideband signal with a 19.5dB peak-to-average ratio. The devices showed 100% survivability and only ~0.2dB average change in saturated output power.



“The NPT1015 is a robust next-generation product, as it incorporates significant thermal management improvements that increase breakdown and lowers thermal impedance. We are using these same techniques in our new 48V product line. Nitronex is very excited about the advancements in product robustness and reliability that put our GaN-on-Si devices on par or ahead of competitive products that primarily use GaN-on-SiC,” said Greg Baker, president and CEO at Nitronex.



Nitronex’s patented SIGANTIC® GaN-on-Si process is the only production-qualified GaN process using an industry standard 4” silicon substrate. This results in a robust, scalable supply chain and positions Nitronex well for the growth expected from emerging GaN markets such as military communications, broadband, RADAR, commercial wireless, satellite communications and point to point microwave. Fully-qualified NPT1015 transistors are now available from stock to 12 weeks, and can be purchased through the Nitronex sales channel and distribution.



About Nitronex

Nitronex, LLC, a Gaas Labs Company, is an innovative leader in the design and manufacture of gallium nitride (GaN) based RF solutions. Nitronex is the pioneer in developing high performance gallium nitride on silicon (GaN-on-Si) semiconductor solutions using its proprietary SIGANTIC® manufacturing process. Nitronex products enable high performance applications in the defense, communications, cable TV, and industrial & scientific markets. An ISO-9001 certified manufacturer, Nitronex was founded in 1999 and is headquartered in Durham, NC. Nitronex has been awarded 24 patents with 17 others pending. For more information, please visit the Nitronex web site at www.nitronex.com.

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