Power MOSFETs offer VDS range from 8-30 V.
Press Release Summary:
Housed in thermally enhanced PowerPAK® SC-75 package measuring 1.6 x 1.6 x 0.8 mm, 30 V Model SiB408DK and 20 V Model SiB412DK feature on-resistance as low as 40 mW at 10 V and 34 mW at 4.5 V, respectively. RoHS-compliant n-channel TrenchFET® power MOSFETs are suitable for load, PA, and battery switches in portable electronics. Model SiB408DK can also be used for load switching in notebook computers and netbooks.
Original Press Release:
Vishay Siliconix Extends Family of N-Channel TrenchFET® Power MOSFETs in Compact PowerPAK® SC-75 Package to Offer 8-V to 30-V VDS Range
New MOSFETs Include Industry's First 30-V Device and Industry's Lowest On-Resistance for a 20-V Device in 1.6-mm by 1.6-mm Footprint Area
MALVERN, PENNSYLVANIA - August 14, 2009 - Vishay Intertechnology, Inc. (NYSE: VSH) today expanded its family of n-channel TrenchFET® power MOSFETs in the thermally enhanced PowerPAK® SC-75 package to offer a VDS range from 8 V to 30 V. The devices released today include the industry's first 30-V device in the 1.6-mm by 1.6-mm footprint area, and a 20-V MOSFET with the industry's lowest on-resistance.
The new 30-V SiB408DK and 20-V SiB412DK join the previously released Siliconix SiB414DK, the first 8-V single n-channel power MOSFET in the PowerPAK SC-75 footprint area. On-resistance for the SiB408DK is as low as 40 mW at 10 V, while the SiB412DK offers an on-resistance down to 34 mW at 4.5 V, which is 21 % lower than the closest competing device.
The PowerPAK SC-75 package measures 1.6 mm by 1.6 mm by 0.8 mm. This is 36% smaller than 2-mm by 2-mm devices and 72% smaller than widely used TSOP-6 devices, while offering similar on-resistance. For designers, the smaller size of the PowerPAK SC-75 saves space and reduces power consumption in portable electronics, allowing for increased functionality while meeting consumer expectations for battery run times.
Typical applications for the n-channel PowerPAK SC-75 power MOSFETs will include load, PA, and battery switches in portable electronics. The devices will also save space in 1/8th or 1/16th bricks compared to common 3 mm by 3 mm packages. The SiB408DK will also be used for load switching in notebook computers and netbooks.
The devices are halogen-free in accordance with IEC 61249-2-21 and are compliant with RoHS Directive. 2002/95/EC. The MOSFETS are 100 % Rg- and UIS-tested.
Device Specification Table
Part number SiB414DK SiB412DK SiB408DK
VDS 8 V 20 V 30 V
VGS ± 5 V ± 8 V ± 20 V
RDS(ON) @ 10 V 40 mW
RDS(ON) @ 4.5 V 26 mW 34 mW 50 mW
RDS(ON) @ 2.5 V 30 mW 40 mW
RDS(ON) @ 1.8 V 37 mW 54 mW
RDS(ON) @ 1.5 V 52 mW
RDS(ON) @ 1.2 V 89 mW
Samples and production quantities of the new n-channel PowerPAK SC-75 power MOSFETs are available now, with lead times of 10 to 12 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at www.vishay.com.
TrenchFET and PowerPAK are registered trademarks of Siliconix incorporated
