Power MOSFETs feature low on-state resistance.
Press Release Summary:
Available in TO-220, TO-262, and TO-263ZP packages, NP Series trench power MOSFETs comprise of 24 AEC-Q101-qualified devices with voltage drain source short ratings of 40 and 55 V, drain current DC ratings of 90 and 100 A, and logic/non-logic gate drive types. They offer max repetitive avalanche energy rating of 1,000 mJ and support max channel temperature of 200°C. Typical values for Rds(on) range from 2.9-5.8 mW and from 5,500-9,500 pF for input capacitance.
Original Press Release:
NEC Electronics America Expands NP Series with Robust Power MOSFETs
New Devices Combine Higher Avalanche Capability and Higher Maximum Channel Temperature with Low On-State Resistance SANTA CLARA, Calif., Dec. 10 // -- NEC Electronics America, Inc. today announced a new family of 24-trench power MOSFETs with enhanced capabilities. The new devices in the company's NP Series feature improved ruggedness with respect to avalanche capability and channel temperature. The combination of improved ruggedness with low on-state resistance (R(DS)(on)) and input capacitance (C(iss)) makes this family ideal for meeting the performance, reliability and low power requirements in a range of automotive and industrial systems applications, including engine cooling fans, HVAC blower motor drives, electric power steering systems and integrated starter generators. The improved ruggedness is achieved by the recently developed UMOS-2R process, an enhancement of NEC Electronics' UMOS-2 trench process with a 0.5-micron design rule. This process results in a maximum repetitive avalanche energy rating of 1000 megajoules (mJ) and supports a maximum channel temperature of 200 degrees Celsius. Typical values for R(DS)(on) range from 2.9 milliohms to 5.8 milliohms and from 5500 picofarads (pF) to 9500 pF for C(iss). The devices also feature 40-volt (V) and 55V V(DSS) (voltage drain source short) ratings, two I(D) (drain current) (DC) ratings of 90 and 100 amperes and logic-/non-logic-type gate drives. The NP Series is part of NEC Electronics America's lineup of low-voltage switching devices that provides efficient power management of power supplies, automotive systems, motor controllers, office equipment, robotic devices and uninterruptible power supplies. All 24 new devices are fully AEC-Q101 qualified and RoHS compliant. The family includes devices with two V(DSS) ratings (40 V and 55 V), two I(D) (DC) ratings (90 A, 100 A) and logic/non-logic gate drive types are available in three popular packages, TO-220, TO-262 and TO-263ZP. Pricing and Availability The new family of rugged UMOS-2R power MOSFETs in RoHS-compliant packages is available now in 50-unit quantities for TO-220 packaged devices, 50-unit quantities for TO-262 packaged devices and 800-unit quantities for TO-263 packaged devices. Pricing ranges from $1.90 to $1.50 each in low volumes. (Pricing and availability are subject to change without notice.) About NEC Electronics America, Inc. NEC Electronics America, Inc., headquartered in Santa Clara, California, is a wholly owned subsidiary of NEC Electronics Corporation , a leading provider of semiconductor products encompassing advanced technology solutions for the broadband and communications markets; system solutions for the mobile, PC, automotive and digital consumer markets; and multi-market solutions for a wide range of consumer applications. NEC Electronics America offers local manufacturing in Roseville, California, and the global manufacturing capabilities of its parent company. In the Americas, NEC Electronics America markets and sells industrial-type active-matrix LCD modules from NEC LCD Technologies, Ltd., a global leader in innovative display technologies. More information about the products offered by NEC Electronics America can be found at www.am.necel.com/. NEC Electronics and NEC Electronics America are either registered trademarks or trademarks of NEC Corporation in the United States and/or other countries. All other registered trademarks or trademarks are property of their respective owners.
Table 1. UMOS-2R product lineup and main specifications Product V V I(C) Channel V(GS) Package R(DS) Avalanche Name (DSS) (GSS) (DC) Temp- (th) (on) Energy erature V(GS)=10V NP100N04MDH TO-220 3.3 milliohms max. NP100N04NDH +/-12V 2V TO-262 3.3 milliohms max. NP100N04PDH TO-263 2.9 milliohms 100 A max. NP100N04MUH TO-220 3.5 milliohms max. NP100N04NUH +/-20V 3V TO-262 3.5 milliohms max. NP100N04PUH TO-263 3.1 milliohms 40V max. NP90N04MDH TO-220 3.8 milliohms max. NP90N04NDH +/-12V 2V TO-262 3.8 milliohms max. NP90N04PDH TO-263 3.4 milliohms 90 A max. NP90N04MUH TO-220 4.1 milliohms max. NP90N04NUH +/-20V 3V TO-262 4.1 milliohms max. NP90N04PUH 200 degrees TO-263 3.8 milliohms Celsius max. 1000 mJ NP100N055MDH (250-hour TO-220 4.8 milliohms guarantee) max. NP100N055NDH +/-12V 2V TO-262 4.8 milliohms max. NP100N055PDH TO-263 4.4 milliohms 100 A max. NP100N055MUH TO-220 4.9 milliohms max. NP100N055NDH +/-20V 3V TO-262 4.9 milliohms max. NP100N055PUH TO-263 4.5 milliohms 55V max. NP90N055MDH TO-220 5.5 milliohms max. NP90N055NDH +/-12V 2V TO-262 5.5 milliohms max. NP90N055PDH TO-263 5.1 milliohms 90 A max. NP90N055MUH TO-220 5.8 milliohms max. NP90N055NUH +/-20V 3V TO-262 5.8 milliohms max. NP90N055PUH TO-263 5.4 milliohms max.
Source: NEC Electronics America, Inc. CONTACT: Denise Garibaldi of NEC Electronics America, Inc., +1-408-588-6620, denise.garibaldi@am.necel.com Web site: www.necel.com/ http://www.am.necel.com/
