Power MOSFETs feature 0.270 W RDS(on).

Press Release Summary:




Model SiHP18N50C with TO-220, SiHF18N50C with TO-220 FULLPAK, and SiHG20N50C with TO-247 packages provide 500 V rating and 0.270 W maximum RDS(on) at 10 V gate drive. Lead-free MOSFETs also feature gate charge of 65 nC, with gate charge x RDS(on) of 17.75 nC. Peak current handling is 72 A pulsed and 18 A continuous. High single-pulse and repetitive avalanche energy capabilities are included.



Original Press Release:



New 500-V Vishay Siliconix Power MOSFETs Feature 0.270 W On-Resistance in TO-220, TO-220F, and TO-247 Packages



MALVERN, PENNSYLVANIA - July 29, 2009 - Vishay Intertechnology, Inc. (NYSE: VSH) today released three new 500-V MOSFETs that extend its Gen 6.2 n-channel planar FET technology to the TO-220, TO-220F, and TO-247 packages.

The new SiHP18N50C (TO-220), SiHF18N50C (TO-220 FULLPAK), and SiHG20N50C combine their 500-V rating with low 0.270 W maximum on-resistance at a 10-V gate drive. This low RDS(on) translates into lower conduction losses that save energy in power factor correction (PFC) and pulsewidth modulation (PWM) applications in a wide range of electronic systems, including LCD TVs, PCs, servers, telecom systems, and welding machines.

In addition to their low on resistance, the devices feature a low gate charge of 65 nC. Gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications, is a low 17.75.

For reliable operation, the devices are 100 % avalanche tested and feature high single-pulse (EAS) and repetitive (EAR) avalanche energy capabilities. Peak current handling is 72 A pulsed and 18 A continuous. All three devices feature an effective output capacitance specification. Compared to previous-generation 500-V power MOSFETs, the new devices also feature improved transconductance and reverse recovery characteristics.

Key Device Specifications

Device Package VDS(V) VGS(±V) ID(A) RDS(on)(W) Qg(nC) Rth(j-a)(°C/W)
SiHP18N50C TO-220 500 30 18 0.270 65 62
SiHF18N50C TO-220 500 30 18 0.270 65 65
FULLPAK
SiHG20N50C TO-247 500 30 20 0.270 65 40

The SiHP18N50C and SiHF18N50C are available with lead (Pb)-free terminations in both the TO-220 and FULLPAK package types. The SiHG20N50C is offered in a lead (Pb)-free TO-247. Samples of the new devices are available now. Production quantities will be available in Q3 2009 with lead times of 8 to 10 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, MOSFETs, optoelectronics, and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at www.vishay.com.

Products mentioned:

o SiHP18N50C

o SiHF18N50C

o SiHG20N50C

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