Power MOSFETs come in isolated 6-pack power module.

Press Release Summary:



TrenchMV(TM) Power MOSFETs are integrated in isolated power module, ISOPLUS-DIL, as 3-phase bridge (6-pack configuration). GWM module series is built with ceramic isolated surface using IXYS DCB (Direct Copper Bonded) and packaging technology. This combination optimizes synergies that promote performance, thermal cycling (no thermal fatigue), and efficiency. Surface-mountable module is offered in 55-100 V range, while currents range from 40-160 A.



Original Press Release:



IXYS Introduces TrenchMV(TM) Power MOSFETs in an Isolated Power Module in a Six-Pack Configuration



Biel, Switzerland. May 8, 2008 - IXYS Corporation (NASDAQ: IXYS) introduces a new family of 55V to 100V high power TrenchMVTM Power MOSFETs integrated in an isolated power module, ISOPLUS-DIL, as a three phase bridge (six-pack configuration).

This module family, the GWM series, is with a ceramic isolated surface using the IXYS DCB and packaging technology and is a surface mountable module (ISOPLUS-DIL). The combination of efficient Power MOSFETs with the ISOPLUS packaging technology embodies the synergies within IXYS divisions that result in a competitive advantage in performance, thermal cycling (no thermal fatigue) and high efficiency power solution that is unmatched in the industry. These types of devices have been already designed in by IXYS customers in a variety of automotive applications.

Improvements in trench device technology continue to bring performance advantages to the TrenchMVTM Power MOSFET family. Lower on resistance and lower gate charge, increased ruggedness and faster switching speeds allow for more power efficient devices. The Direct Copper Bonded (DCB) ceramic isolation in combination with the insert-molding technology creates a reliable module with an extreme high power density with excellent isolation, thermal conductivity and no thermal fatigue.

IXYS provides the surface mountable module in the voltage range from 55 to 100V while currents range from 40 to 160A. The GWM160-0055X1-SMD (55V, 160A, Ron = 0.0027Ohms with isolated Rthjc = 0.9K/W) is just an example of the surface mountable module with TrenchMVTM Power MOSFET with superior electrical and thermal performance. Besides the standard six-pack configuration IXYS offers several different options with respect to the internal layout and type of silicon chips inside.

The ISOPLUS-DIL combined with the TrenchMVTM Power MOSFETs finds homes in many rugged hard switching applications. These devices are designed to meet the most robust conditions commonly required by the automotive or electric vehicle sector. The ISOPLUS-DIL can be surface mounted with a standard pick and place machine and is suitable for re-flow processes. The automation level of the end product production can be maintained and have the benefits of ceramic module isolation. IXYS has been shipping the GWM series products to select automotive customers in Europe.

The GWM series containing the latest technology TrenchMVTM Power MOSFETs is a very compact and reliable solution for automotive applications. Design-in and use are simplified with the electrical and mechanical properties of the ISOPLUS-DIL since the package does not need special mounting or electrical isolation to a heatsink. IXYS can offer any power semiconductor configuration in this module family as application specific standard power products (ASSPP).

For data sheets and more detailed information, visit our website under www.ixys.com or contact your sales representative. For inquiries in Europe, please contact: IXYS Semiconductor GmbH at marcom@ixys.de.

About IXYS Corporation
Since its inception, IXYS Corporation has been developing technology driven semiconductor products to improve power conversion efficiency. IXYS is a global pioneer in the development of power MOSFETs, IGBTs and bipolar power technologies that serve the worldwide needs for power conversion, efficient motor control and renewable energy. IXYS and its divisions world wide offer a diversified product base for telecommunications IC, e-paper display drivers, RF power devices, power subsystems and specialized driver and power management IC's.

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