Power MOSFET offers on-resistance down to 18 mW.
Press Release Summary:
Contained in 2 x 2 mm PowerPAK® SC-70 package, SiA433EDJ 20 V p-channel power MOSFET offers on-resistance of 18 mW at 4.5 V, 26 mW at 2.5 V, and 65 mW at 1.8 V. It also offers gate-source voltage of 12 V, suiting it for applications with gate-drive voltage variations due to surges, spikes, noise, or overvoltages. Zener diode provides ESD protection up to 1,800 V. Unit is halogen-free/RoHS-compliant and can be used as load, battery, and charging switch in handheld devices.
Original Press Release:
Vishay Siliconix 20-V P-Channel TrenchFET® Gen III Power MOSFET Offers Industry's Lowest On-Resistance from 18 mW at 4.5 V to 65 mW at 1.8 V in Compact 2 x 2 mm Footprint Area
MALVERN, PENNSYLVANIA - Vishay Intertechnology, Inc. (NYSE: VSH) today introduced a new 20-V p-channel power MOSFET with the lowest on-resistance ever achieved for a p-channel device in the compact 2-mm by 2-mm footprint area of the thermally enhanced PowerPAK® SC-70. The new SiA433EDJ is the newest product built on TrenchFET® Gen III p-channel technology, which uses self-aligning process techniques to pack one billion transistor cells into each square inch of silicon. This leading-edge technology allows a superfine, sub-micron pitch process that cuts the industry's best on-resistance for a p-channel MOSFET nearly in half.
The SiA433EDJ offers an ultra-low on-resistance of 18 mW at 4.5 V, 26 mW at 2.5 V, and 65 mW at 1.8 V. These values are 40% lower at 4.5 V and 30 % lower at 2.5 V than the closest competing p-channel device.
The new MOSFET is also the only 20-V device with both a gate-source voltage of 12 V and an on-resistance rating at 1.8 V. This allows it to be used in applications that encounter higher gate-drive voltage variation due to surges, spikes, noise, or overvoltages, while providing safer designs in applications with smaller input voltages.
The SiA433EDJ will be used as load, battery, and charging switches in handheld devices such as cell phones, smart phones, PDAs, and MP3 players. The low on-resistance of the MOSFET translates into lower conduction losses, saving power and prolonging battery life between charges in these devices. At half the size of the TSOP-6, and offering similar on-resistance, the SiA433EDJ compact PowerPAK SC-70 package saves space for other product features or to enable smaller end products.
To reduce field failures due to ESD, the device features a built-in Zener diode for ESD protection up to 1800 V. The MOSFET is halogen free in accordance with IEC 61249-2-21, compliant to RoHS Directive 2002/95/EC, and 100% Rg-tested.
Samples of the new SiA433EDJ TrenchFET power MOSFET are available now. Production quantities will be available in Q1 2010, with lead times of 14 to 16 weeks for larger orders.
Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at www.vishay.com.
